Patents by Inventor Kuanhsiung Chen

Kuanhsiung Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having high-? dielectric layer and method for manufacturing the same
    Patent number: 11201055
    Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor layer on a substrate, forming a high-? dielectric layer directly on the semiconductor layer as formed, and annealing the semiconductor layer, the high-dielectric layer, and the substrate. The semiconductor layer is a Group III-V compound semiconductor.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: December 14, 2021
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Chien-Hua Fu, Keng-Yung Lin, Yen-Hsun Lin, Kuanhsiung Chen, Juei-Nai Kwo, Minghwei Hong
  • Single-crystal rare earth oxide grown on III-V compound
    Patent number: 11081339
    Abstract: A substrate with a (001) orientation is provided. A gallium arsenide (GaAs) layer is epitaxially grown on the substrate. The GaAs layer has a reconstruction surface that is a 4×6 reconstruction surface, a 2×4 reconstruction surface, a 3×2 reconstruction surface, a 2×1 reconstruction surface, or a 4×4 reconstruction surface. Via an atomic layer deposition process, a single-crystal structure yttrium oxide (Y2O3) layer is formed on the reconstruction surface of the GaAs layer. The atomic layer deposition process includes water or ozone gas as an oxygen source precursor and a cyclopentadienyl-type compound as an yttrium source precursor.
    Type: Grant
    Filed: April 24, 2019
    Date of Patent: August 3, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuanhsiung Chen, Minghwei Hong, Jueinai Kwo, Yen-Hsun Lin, Keng-Yung Lin
  • SINGLE-CRYSTAL RARE EARTH OXIDE GROWN ON III-V COMPOUND
    Publication number: 20190252184
    Abstract: A substrate with a (001) orientation is provided. A gallium arsenide (GaAs) layer is epitaxially grown on the substrate. The GaAs layer has a reconstruction surface that is a 4×6 reconstruction surface, a 2×4 reconstruction surface, a 3×2 reconstruction surface, a 2×1 reconstruction surface, or a 4×4 reconstruction surface. Via an atomic layer deposition process, a single-crystal structure yttrium oxide (Y2O3) layer is formed on the reconstruction surface of the GaAs layer. The atomic layer deposition process includes water or ozone gas as an oxygen source precursor and a cyclopentadienyl-type compound as an yttrium source precursor.
    Type: Application
    Filed: April 24, 2019
    Publication date: August 15, 2019
    Inventors: Kuanhsiung Chen, Minghwei Hong, Jueinai Kwo, Yen-Hsun Lin, Keng-Yung Lin
  • Single-crystal rare earth oxide grown on III-V compound
    Patent number: 10283349
    Abstract: A substrate with a (001) orientation is provided. A gallium arsenide (GaAs) layer is epitaxially grown on the substrate. The GaAs layer has a reconstruction surface that is a 4×6 reconstruction surface, a 2×4 reconstruction surface, a 3×2 reconstruction surface, a 2×1 reconstruction surface, or a 4×4 reconstruction surface. Via an atomic layer deposition process, a single-crystal structure yttrium oxide (Y2O3) layer is formed on the reconstruction surface of the GaAs layer. The atomic layer deposition process includes water or ozone gas as an oxygen source precursor and a cyclopentadienyl-type compound as an yttrium source precursor.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: May 7, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuanhsiung Chen, Minghwei Hong, Jueinai Kwo, Yen-Hsun Lin, Keng-Yung Lin
  • SEMICONDUCTOR DEVICE HAVING HIGH-K DIELECTRIC LAYER AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20180151356
    Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor layer on a substrate, forming a high-? dielectric layer directly on the semiconductor layer as formed, and annealing the semiconductor layer, the high-dielectric layer, and the substrate. The semiconductor layer is a Group III-V compound semiconductor.
    Type: Application
    Filed: September 15, 2017
    Publication date: May 31, 2018
    Inventors: Chien-Hua FU, Keng-Yung LIN, Yen-Hsun LIN, Kuanhsiung CHEN, Juei-Nai KWO, Minghwei HONG
  • SINGLE-CRYSTAL RARE EARTH OXIDE GROWN ON III-V COMPOUND
    Publication number: 20170345646
    Abstract: A substrate with a (001) orientation is provided. A gallium arsenide (GaAs) layer is epitaxially grown on the substrate. The GaAs layer has a reconstruction surface that is a 4×6 reconstruction surface, a 2×4 reconstruction surface, a 3×2 reconstruction surface, a 2×1 reconstruction surface, or a 4×4 reconstruction surface. Via an atomic layer deposition process, a single-crystal structure yttrium oxide (Y2O3) layer is formed on the reconstruction surface of the GaAs layer. The atomic layer deposition process includes water or ozone gas as an oxygen source precursor and a cyclopentadienyl-type compound as an yttrium source precursor.
    Type: Application
    Filed: May 27, 2016
    Publication date: November 30, 2017
    Inventors: Kuanhsiung Chen, Mingwei Hong, Jueinai Kwo, Yen-Hsun Lin, Keng-Yung Lin