Abstract: An amorphous silicon based hole-injection type "Separate Absorption and Multiplication Avalanche Photodiode" ("SAMAPD") has been invented. The device was made by separating an absorption layer and an avalanche layer from a conventional APD (Avalanche Photodiode). This will make a majority of an voltage bias to go across on the avalanche layer (i.e., a high energy bandgap material) and to enlarge an avalanche multiplication effect (i.e., increasing optical gains). In addition, the voltage bias goes across on the absorption layer will be sufficiently small to reduce a dark current. Using an i-a-Si:H material as the avalanche layer material and an i-a-Si.sub.1-x :Ge.sub.x :H material as the absorption layer material, the hole-injection type SAMPAD yields a very high gain, i.e., 686, at a reverse bias of 16V under an incident light power of P.sub.in =1 .mu.w. The product of this invention is very suitable for use in a long distance optical communication.

Abstract: An integrated photoreceiver is provided. The photoreceiver includes a substrate, a metal-insulator-semiconductor switch (MISS) formed on a first portion of the substrate, and a photoreceiving structure formed on a second portion of the substrate for receiving a light signal and generating a current signal to trigger the MISS in response to said light signal.

Abstract: An amorphous-silicone-based antifuse structure has been invented for VLSI (Very Large Scale Integration circuits) FPGA's (Fields Programmable Gate Array) applications. The structure comprises from top to bottom a first Al layer/a first i-a-SiC:H layer/an i-a-SiH layer/a second i-a-SiC:H layer/a second Al layer, which is basically a MIM (Metal/Insulator/Metal) structure. The MIM structure offers such major advantages as simple for preparation and low in cost. Due to use of the Al layer as an electrode metal and use of a PECVD system for the preparation of the amorphous silicon materials, the antifuse structure is compatible with that of general VLSI devices. In addition, due to a difference in the thickness of barrier enhancement layers in the first and the second i-a-SiC:H layer, a programmed voltage can be adjusted easily and applied in many fields. This structure has a very low on-resistance as the antifuse structure breakdown. The anitifuse has a high resistance (i.e.

Abstract: A method of manufacturing a light converter with an LED and an amorphous-silicon pin heterojunction diode includes steps of a) preparing an LED structure on one side of a substrate as a light-emitting unit; b) forming a buffer layer on the other side of the substrate; and c) depositing a pin (positive type/intrinsic type/negative type) diode on the buffer layer as a light-absorbing unit this blue/red light converter, and the value of rise time obtained under 1 k.OMEGA. is 112.5 .mu.sec. The present invention desirably lower the cost, simplify the preparation process, and avoids degrading features of a light converting unit by over-heating during the process of preparing the pin diode.

Abstract: A method of manufacturing a light converter with an LED and an amorphous-silicon pin heterojunction diode includes steps of a) preparing an LED structure on one side of a substrate as a light-emitting unit; b) forming a buffer layer on the other side of the substrate; and c) depositing a pin (positive type/intrinsic type/negative type) diode on the buffer layer as a light-absorbing unit this blue/red light converter, and the value of rise time obtained under 1 kf.OMEGA. is 112.5 .mu.sec. The present invention desirably lower the cost, simplify the preparation process, and avoids degrading features of a light converting unit by over-heating during the process of preparing the pin diode.