Abstract: A polarization method that utilizes a chemical-mechanical polishing operation. In the polishing operation, slurry for polishing a metallic layer is first employed to remove a greater portion of the metallic layer. Next, slurry for polishing a dielectric layer and having properties very similar to the metal-polishing slurry is added and mixed together with the slurry for polishing a metallic layer so that the polishing rate for the dielectric layer is increased. Consequently, metallic residues remaining on the dielectric layer are removed and a planar dielectric layer is obtained at the same time.

Abstract: A planarization method that utilizes a chemical-mechanical polishing operation. In the polishing operation, a first slurry for polishing a metallic layer is first employed to remove a greater portion of the metallic layer. Next, a second slurry for polishing a dielectric layer and having properties very similar to the metal-polishing slurry is added and mixed together with the slurry for polishing a metallic layer so that the polishing rate for the dielectric layer is increased. Consequently, metallic residues remaining on the dielectric layer are removed, and a planar dielectric layer is obtained at the same time.

Abstract: A locator for a material sheet comprises a frame with a homogeneous cross section, and a susceptor. The frame at the left, the right, the front, and the rear sides thereof surrounds with an inner wall. The distance between the left and the right sides of the inner wall and the distance between the front and the rear sides thereof are corresponding to the size of the upward projection of the susceptor. The upper end of the inner wall extends outward a horizontal support surface. The distance between the left and the right sides of the support surface and the distance between the front and the rear sides of the support surface are corresponding to the size of the sheet. An upward slant surface extends outward from the support surface. The sheet can slide downward along the slant surface to cover the susceptor while the sheet is laid down from the top of the locator.

Abstract: A method of improving the reliability of a gate oxide layer. A substrate has a gate formed thereon and a dielectric layer is formed on the substrate. Metal interconnects are formed on the dielectric layer. A liner insulated layer is formed by LPCVD, APCVD or PECVD, for example, to cover the dielectric layer and the interconnects. An inter-metal dielectric layer is formed on the liner insulated layer by HDPCVD.

Abstract: A gas delivering apparatus useful for improving the level of uniformity of thin film deposited over a silicon wafer in a chemical vapor deposition. By reshaping the injector from a conventional straight hollow tube to a funnel-shaped profile, the opening of the injector is widened. With a wider injector opening, the gas flow rate becomes slower and hence more capable of spreading over a wider wafer surface area. Consequently, a uniform gas flow pattern is established resulting in the deposition of a uniform layer.

Abstract: A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the deposition of three oxide layers using high density plasma chemical vapor deposition (HDPCVD). A first HDPCVD step is carried out while keeping the substrate unbiased to form an oxide layer over the lines and in the gap. A second HDPCVD step in which the substrate is biased deposits a second oxide layer over the first oxide layer. During the second HDPCVD step some etching occurs and a portion of the first oxide layer is removed. A third HDPCVD step is carried out at a greater etch and sputtering rate than the second step to complete filling of the gap with dielectric material. The first oxide layer acts to protect the underlying structures from etching damage during the third step. Gaps between wiring lines can be filled with dielectric material without forming voids, even for high aspect ratio gaps.