Abstract: The present disclosure provides a metal wire and a method for manufacturing the same. The method for manufacturing the metal wire includes: forming a metal bar on a substrate; forming a mask above the metal bar, a width of the mask being smaller than a width of the metal bar, and an orthographic projection of the mask on the substrate is within an orthographic projection of the metal bar on the substrate; and wet etching the metal bar to a saturation state under a protection of the mask to form a metal wire, a width of the metal wire being smaller than the width of the mask. The above method can form the metal wire with a high thickness and a narrow line width.

Abstract: The present disclosure provides a biological detection device, a biological chip, a microelectrode structure, and a manufacturing method of the microelectrode structure. The microelectrode structure can include a first insulating layer, a protrusion, and an electrode layer. The protrusion is disposed on the first insulating layer. The electrode layer conformally covers the first insulating layer and the protrusion. The present disclosure can improve the detection accuracy.

Abstract: A display device and a method for manufacturing the display device are provided. The display device includes: a driving circuit board provided with a plurality of first connection electrodes on a side thereof; a display module on a side of the driving circuit board, the display module including a flexible substrate, a plurality of signal lines on a side, away from the driving circuit board, of the flexible substrate and a plurality of bottom electrodes on a side, facing the driving circuit board, of the flexible substrate; the flexible substrate being provided with a plurality of first via holes in a display area of the display module, the signal lines are electrically connected with the bottom electrodes through the first via holes, and the bottom electrodes are electrically connected with the first connection electrodes.

Abstract: A photoelectric detection substrate and a manufacturing method thereof, and a photoelectric detection device are provided. The photoelectric detection substrate includes: a base substrate and a semiconductor layer arranged on the base substrate, wherein the semiconductor layer is configured to convert an optical signal into an electrical signal.

Abstract: A phase shifter and a method for manufacturing the same are provided. The phase shifter includes a substrate, a signal line on the substrate, ground lines in pairs and on the substrate, and at least one film bridge on the substrate and spaced apart from the signal line. Two adjacent ground lines of the ground lines are on both sides of the signal line and spaced apart from the signal line, respectively, and both ends of each film bridge are on the two adjacent ground lines, respectively. The signal line is in a space surrounded by each film bridge and the substrate. Each film bridge includes a metal layer opposite to the signal line, the metal layer has a plurality of openings therein, and the plurality of openings penetrate through the metal layer in a thickness direction of the metal layer.

Abstract: The present disclosure provides a flat panel detection substrate, a fabricating method thereof and a flat panel detector. The flat panel detection substrate according to the present disclosure includes a base substrate; a bias electrode and a sense electrode on the base substrate; and a semiconductor layer over the bias electrode and the sense electrode, the semiconductor layer having a thickness greater than 100 nm.

Abstract: The disclosure provides a light detection substrate, a manufacturing method thereof and a light detection apparatus. The light detection substrate includes a plurality of light detection units, each of the light detection units includes a first electrode, a second electrode and a photoelectric conversion layer, a spacer region exists between orthographic projections of the first electrode and the second electrode on a substrate, the photoelectric conversion layer is provided with at least one opening, and an orthographic projection of the at least one opening on the substrate is located in the spacer region.

Abstract: A flat panel detector includes a base substrate, a sensing electrode and a bias electrode over the base substrate, and an insulating layer over the sensing electrode and the bias electrode at a side distal from the substrate. A difference between thicknesses of regions of the insulating layer corresponding to the sensing electrode and the bias electrode respectively is not greater than a preset threshold. When a sufficiently high voltage is applied to the insulating layer and turned on, because the thickness thereof is relatively uniform, a dark current generated by the sensing electrode and the bias electrode under the insulating layer is relatively uniform, thereby improving detection accuracy of the flat panel detector.

Abstract: Biological detection apparatuses, systems and methods are provided. A biological detection apparatus may include a flexible substrate and a biosensor. The biosensor is provided on the flexible substrate and configured to obtain substance information of a living body.

Abstract: The present disclosure provides a biological detection device, a biological chip, a microelectrode structure, and a manufacturing method of the microelectrode structure. The microelectrode structure can include a first insulating layer, a protrusion, and an electrode layer. The protrusion is disposed on the first insulating layer. The electrode layer conformally covers the first insulating layer and the protrusion. The present disclosure can improve the detection accuracy.

Abstract: A radiation detector having a plurality of pixels is provided. A respective one of the plurality of pixels includes a thin film transistor on a base substrate; an inter-layer dielectric layer on a side of the thin film transistor away from the base substrate; a sensing electrode and a bias electrode on a side of the inter-layer dielectric layer away from the base substrate, wherein the sensing electrode extends through the inter-layer dielectric layer to electrically connect to the thin film transistor; a passivation layer on a side of the sensing electrode and the bias electrode away from the inter-layer dielectric layer, wherein the passivation layer includes a first portion and a second portion; and a radiation detection layer on a side of the passivation layer away from the base substrate. The first portion and the second portion form a substantially flat contacting surface.

Abstract: A liquid crystal antenna includes a first substrate, a second substrate, and liquid crystals arranged between the first substrate and the second substrate. First protrusions and second protrusions are arranged at a surface of the second substrate facing the first substrate, a size of each first protrusion in a first direction is substantially greater than a size of each second protrusion in the first direction, and the first direction is a direction perpendicularly from the second substrate to the first substrate. A run-through labyrinth-type gap is defined by the first protrusions at a surface of the second substrate, and each second protrusion is arranged in the labyrinth-type gap.

Abstract: A phase shifter and a method for manufacturing the same are provided. The phase shifter includes a substrate, a signal line on the substrate, ground lines in pairs and on the substrate, and at least one film bridge on the substrate and spaced apart from the signal line. Two adjacent ground lines of the ground lines are on both sides of the signal line and spaced apart from the signal line, respectively, and both ends of each film bridge are on the two adjacent ground lines, respectively. The signal line is in a space surrounded by each film bridge and the substrate. Each film bridge includes a metal layer opposite to the signal line, the metal layer has a plurality of openings therein, and the plurality of openings penetrate through the metal layer in a thickness direction of the metal layer.

Abstract: A ray detector and a ray detection panel. The ray detector includes a base substrate, a thin film transistor, a scintillator, and a photodetector; the scintillator is located on aside of the photodetector that is away from the base substrate; the photodetector includes: a first conductive structure; a semiconductor layer; a second conductive structure; a first dielectric layer; and a second dielectric layer, the second conductive structure is electrically connected with source electrode; the thin film transistor is located between the base substrate and the photodetector; and an orthographic projection of the thin film transistor on the base substrate at least partially falls into an orthographic projection of the photodetector on the base substrate.

Abstract: A flat panel detector includes a base substrate, a sensing electrode and a bias electrode over the base substrate, and an insulating layer over the sensing electrode and the bias electrode at a side distal from the substrate. A difference between thicknesses of regions of the insulating layer corresponding to the sensing electrode and the bias electrode respectively is not greater than a preset threshold. When a sufficiently high voltage is applied to the insulating layer and turned on, because the thickness thereof is relatively uniform, a dark current generated by the sensing electrode and the bias electrode under the insulating layer is relatively uniform, thereby improving detection accuracy of the flat panel detector.

Abstract: A radiation detector having a plurality of pixels is provided. A respective one of the plurality of pixels includes a thin film transistor on a base substrate; an inter-layer dielectric layer on a side of the thin film transistor away from the base substrate; a sensing electrode and a bias electrode on a side of the inter-layer dielectric layer away from the base substrate, wherein the sensing electrode extends through the inter-layer dielectric layer to electrically connect to the thin film transistor; a passivation layer on a side of the sensing electrode and the bias electrode away from the inter-layer dielectric layer, wherein the passivation layer includes a first portion and a second portion; and a radiation detection layer on a side of the passivation layer away from the base substrate. The first portion and the second portion form a substantially flat contacting surface.

Abstract: Embodiments of the present disclosure provide a pixel circuit and a drive method thereof, and a detector including the pixel circuit. The pixel circuit includes a photoelectric conversion circuit, a reset circuit, an amplifying circuit, a first control circuit, a second control circuit, a storage circuit, and an output circuit. The photoelectric conversion circuit is configured to convert an optical signal into an electric signal. The reset circuit is configured to reset a voltage of the first node. The amplifying circuit is configured to amplify the voltage of the first node. The first control circuit is configured to control a voltage of the second node. The second control circuit is configured to control a voltage of the third node. The storage circuit is configured to store an electric charge corresponding to the voltage outputted from the amplifying circuit. The output circuit is configured to output the stored electric charge.

Abstract: An electrical connector includes an insulative housing having opposite mating port and mounting port. Plural pairs of contacts are retained in the housing. Each pair of contacts has a first contact blade and a second contact blade. Each of the first contact blade and the second contact blade includes a main body, a contacting section extending into the mating port, and a mounting leg of the main body disposed in the mounting port. Each of the main body of the first contact blade and the main body of the second contact blade forms an embossment abutting against each other so as to electrically unify both the first contact blade and the second contact blade without blocking the space therebetween for enhancing heat dissipation thereof.

Abstract: The present disclosure provides a touch display device and a manufacturing method thereof. The touch display device includes a touch panel and a display panel. The display panel is arranged opposite to the touch panel and the display panel is adhered to the touch panel, and a plurality of supports is arranged between the display panel and the touch panel.

Abstract: A ray detector and a ray detection panel. The ray detector includes a base substrate, a thin film transistor, a scintillator, and a photodetector; the scintillator is located on aside of the photodetector that is away from the base substrate; the photodetector includes: a first conductive structure; a semiconductor layer; a second conductive structure; a first dielectric layer; and a second dielectric layer, the second conductive structure is electrically connected with source electrode; the thin film transistor is located between the base substrate and the photodetector; and an orthographic projection of the thin film transistor on the base substrate at least partially falls into an orthographic projection of the photodetector on the base substrate.