Abstract: Disclosed is a storage device which includes a first word line connected with memory cells being in a program state, a second word line connected with memory cells being an erase state, and a free word line between the first and second word lines and connected with memory cells being the erase state. Whether a block continuous-write is possible with respect to the memory cells connected with the second word line is determined by verifying the erase state of the memory cells connected with the free word line during one busy signal period. According to the present disclosure, because whether a block continuous-write is possible is determined with respect to a plurality of free pages during one busy signal period, a time taken to perform the block continuous-write operation may decrease.

Abstract: A memory system includes a first memory device including a plurality of first memory blocks each including a plurality of first memory cells stacked in a direction perpendicular to a substrate; and a memory controller configured to control a memory operation of the first memory device. The memory controller is configured to select and operate any one of different control schemes for each of the first memory blocks based on a number of first not-open (N/O) strings included in each of the first memory blocks, respectively.

Abstract: A memory system includes a first memory device including a plurality of first memory blocks each including a plurality of first memory cells stacked in a direction perpendicular to a substrate; and a memory controller configured to control a memory operation of the first memory device. The memory controller is configured to select and operate any one of different control schemes for each of the first memory blocks based on a number of first not-open (N/O) strings included in each of the first memory blocks, respectively.

Abstract: A non-volatile memory device is provided. The memory device includes: word lines stacked on a substrate; a string select lines on the word lines, the string select lines being spaced apart from each other in a first horizontal direction and extending in a second horizontal direction; and a memory cell array including memory blocks, each of which includes memory cells connected to the word lines and the string select lines. The string select lines include a first string select line, and a second string select line which is farther from a word line cut region than the first string select line, and a program operation performed on second memory cells connected to a selected word line and the second string select line is performed before a program operation performed on first memory cells connected to the selected word line and the first string select line.

Abstract: A memory system includes a first memory device including a plurality of first memory blocks each including a plurality of first memory cells stacked in a direction perpendicular to a substrate; and a memory controller configured to control a memory operation of the first memory device. The memory controller is configured to select and operate any one of different control schemes for each of the first memory blocks based on a number of first not-open (N/O) strings included in each of the first memory blocks, respectively.

Abstract: A memory device including: a memory cell array including a plurality of memory cells forming a plurality of strings in a vertical direction with a substrate; and a control logic configured to detect a not-open string (N/O string) from the plurality of strings in response to a write command and convert pieces of target data to be programmed on a plurality of target memory cells in the N/O string so that the pieces of target data have a value that limits a number of times a program voltage is applied to the plurality of target memory cells.

Abstract: A storage device includes a nonvolatile memory device that includes memory blocks, each including memory cells, and a controller that receives a first write request from an external host device. Depending on the first write request, the controller transmits a first sanitize command to the nonvolatile memory device and transmits first write data and a first write command associated with the first write request to the nonvolatile memory device. The nonvolatile memory device is configured to sanitize first data previously written to first memory cells of a first memory block of the memory blocks in response to the first sanitize command. The nonvolatile memory device is further configured to write the first write data to second memory cells of the first memory block in response to the first write command.

Abstract: A storage device includes a nonvolatile memory device that includes memory blocks, each including memory cells, and a controller that receives a first write request from an external host device. Depending on the first write request, the controller transmits a first sanitize command to the nonvolatile memory device and transmits first write data and a first write command associated with the first write request to the nonvolatile memory device. The nonvolatile memory device is configured to sanitize first data previously written to first memory cells of a first memory block of the memory blocks in response to the first sanitize command. The nonvolatile memory device is further configured to write the first write data to second memory cells of the first memory block in response to the first write command.

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.