Patents by Inventor Kumnith Ping

Kumnith Ping has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for metal coated silicon fuel cell electrode
    Publication number: 20060134509
    Abstract: According to one embodiment of the invention, an intermediate binding layer and a metal layer can be deposited on a silicon electrode that has been configured with a flow field for a fuel cell. The metal provides high conductivity for the electrode and can also prevent degradation of the silicon. The intermediate binding layer allows the metal to be coupled with the silicon. As one example, tantalum can be used as the intermediate layer and gold can be used as the covering layer.
    Type: Application
    Filed: December 29, 2005
    Publication date: June 22, 2006
    Applicant: ClearEdge Power, Inc.
    Inventors: Kumnith Ping, Slobodan Petrovic, Brett Vinsant
  • Method and apparatus for carbon coated silicon fuel cell electrode
    Publication number: 20060127708
    Abstract: According to one embodiment of the invention, carbon can be deposited on a silicon electrode that has been configured with a flow field for a fuel cell. The carbon provides high conductivity for the electrode and can also prevent degradation of the silicon.
    Type: Application
    Filed: December 29, 2005
    Publication date: June 15, 2006
    Applicant: ClearEdge Power, Inc.
    Inventors: Kumnith Ping, Slobodan Petrovic
  • AMEL device with improved optical properties
    Patent number: 6504312
    Abstract: An alternating current thin-film lectroluminescent device includes a plurality of pixel electrodes. An electroluminescent phosphor material is located between a first dielectric layer and a second dielectric layer. A transparent electrode layer, wherein at least a portion 10 of the electroluminescent phosphor material and the first and second dielectric layers are located between the pixel electrodes and the transparent electrode layer. The first dielectric layer is closer to the transparent electrode layer than the second dielectric layer. A non-uniform substantially non-conductive light absorbing material is located between the transparent electrode layer and the first dielectric layer.
    Type: Grant
    Filed: February 8, 2001
    Date of Patent: January 7, 2003
    Assignee: Planar Systems, Inc.
    Inventors: Richard T. Tuenge, Stephanier J. Moehnke, Kumnith Ping
  • AMEL device with improved optical properties
    Patent number: 6414439
    Abstract: An alternating current thin-film electroluminescent device includes a plurality of pixel electrodes. An electroluminescent phosphor material is located between a first dielectric layer and a second dielectric layer. A transparent electrode layer, wherein at least a portion of the electroluminescent phosphor material and the first and second dielectric layers are located between the pixel electrodes and the transparent electrode layer. The first dielectric layer is closer to the transparent electrode layer than the second dielectric layer. The phosphor material is patterned.
    Type: Grant
    Filed: March 12, 2001
    Date of Patent: July 2, 2002
    Assignee: Planar Systems, Inc.
    Inventors: Richard T. Tuenge, Stephanier J. Moehnke, Kumnith Ping, William Arno Vetanen
  • AMEL device with improved optical properties
    Publication number: 20010045801
    Abstract: An alternating current thin-film lectroluminescent device includes a plurality of pixel electrodes. An electroluminescent phosphor material is located between a first dielectric layer and a second dielectric layer. A transparent electrode layer, wherein at least a portion 10 of the electroluminescent phosphor material and the first and second dielectric layers are located between the pixel electrodes and the transparent electrode layer. The first dielectric layer is closer to the transparent electrode layer than the second dielectric layer. A non-uniform substantially non-conductive light absorbing material is located between the transparent electrode layer and the first dielectric layer.
    Type: Application
    Filed: February 8, 2001
    Publication date: November 29, 2001
    Inventors: Richard T. Tuenge, Stephanier J. Moehnke, Kumnith Ping