Patents by Inventor Kun-Chung Wu

Kun-Chung Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240170299
    Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.
    Type: Application
    Filed: January 30, 2024
    Publication date: May 23, 2024
    Inventors: KUN-JU LI, ANG CHAN, HSIN-JUNG LIU, WEI-XIN GAO, JHIH-YUAN CHEN, CHUN-HAN CHEN, ZONG-SIAN WU, CHAU-CHUNG HOU, I-MING LAI, FU-SHOU TSAI
  • Patent number: 11923205
    Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.
    Type: Grant
    Filed: December 17, 2021
    Date of Patent: March 5, 2024
    Assignee: UNITED MICROELECTRONICS CORPORATION
    Inventors: Kun-Ju Li, Ang Chan, Hsin-Jung Liu, Wei-Xin Gao, Jhih-Yuan Chen, Chun-Han Chen, Zong-Sian Wu, Chau-Chung Hou, I-Ming Lai, Fu-Shou Tsai
  • Patent number: 5324439
    Abstract: The present invention is a process for oxidation of a liquid which contains cyanide and soluble metal ions, using an oxygen-containing gas. Art example of such a liquid is the liquid waste produced during metal treatment processes. The disclosed process not only eliminates the cyanide completely, but also converts the metal dissolved in the liquid into granular metal oxides which can be readily recovered.
    Type: Grant
    Filed: March 19, 1993
    Date of Patent: June 28, 1994
    Assignee: Industrial Technology Research Institute
    Inventors: Shyh-Tsung Chen, Kun-Chung Wu, Wen-Sen Chang