Abstract: The present disclosure is directed to a method of manufacturing one or more needles of a probe card by refining and processing a conductive body that extends from the probe card to form a respective tip at the end of the respective conductive body. Forming the respective tip of a respective needle includes removing respective portions from the end of the conductive body by flowing an electrolytic fluid between a conductive pattern structure and an end of the respective conductive body. Removing the respective portions with the flow of the electrons may be performed in multiple successive steps to form various needles with various sizes, shapes, and profiles (e.g., cylindrical, rectangular, triangular, trapezoidal, etc.).

Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.

Abstract: A method for eliminating bubbles from a liquid dispensing system includes flowing a liquid containing bubbles into a liquid inlet of a tank from a filter to substantially fill the tank, wherein substantially all bubbles accumulate in an upper portion of the tank having a lateral dimension greater than a lateral dimension of a lower portion of the tank, and flowing the liquid into the tank comprises flowing the liquid through an inlet pipe extending at an acute angle relative to a horizontally-oriented axis of the tank. The method further includes flowing a liquid substantially free of bubbles out of the tank via a liquid outlet at the lower portion of the tank for dispensing to a substrate.

Abstract: A filament forming method includes: performing first stage to apply first bias including gate and drain voltages to a resistive memory unit plural times until read current reaches first saturating state, latching read current in first saturating state as saturating read current, determining whether rate of increase of saturating read current is less than first threshold value; when rate of increase of saturating read current is not less than first threshold value, performing second stage to apply second bias, by increasing gate voltage and decreasing drain voltage, to the resistive memory unit plural times until read current reaches second saturating state, latching read current in second saturating state as saturating read current and determining whether rate of increase of saturating read current is less than first threshold value; finishing the method when rate of increase of saturating read current is less than first threshold value and saturating read current reaches target current value.

Abstract: The application relates to a sensing device and a lighting device. The sensing device comprises a sensor provided with a glass window to transmit light and is configured to sense light incident upon the sensor; a circuit board, wherein one side of the circuit board is provided with the sensor; a Fresnel lens arranged above the sensor and configured to transmit light to the sensor; and a housing made from a flame-resistant material, wherein the housing comprises an accommodation space configured to accommodate the sensor and the circuit board, and the housing is provided with a center hole to expose the glass window. By adopting the technical solution, the sensor has flame-resistant performance.

Abstract: A power source circuit includes a first power source subcircuit. The first power source subcircuit includes a first overvoltage protection circuit, a first undervoltage protection circuit, a first drive circuit, and a first switching circuit. A cascade output result of the first over-voltage protection circuit and the first undervoltage protection circuit is used to control the first switching circuit for on-off control of the first power source subcircuit.

Abstract: The present invention relates to a method for producing recombinant human prethrombin-2 protein and having human ?-thrombin activity by the plant-based expression systems.

Abstract: A data processing method includes receiving an event data stream, where the event data stream includes at least a first event data item and a second event data item, the first event data item includes a first timestamp for obtaining the first event data item, the second event data item includes a second timestamp for obtaining the second event data item, and the second event data item is obtained most recently before obtaining the first event data item; and obtaining a compressed event data stream corresponding to the event data stream, where the compressed event data stream includes at least a first compressed event data item corresponding to the first event data item, and the first compressed event data item includes first time information.

Abstract: Disclosed are a method for adjusting a signal of a display panel, a time controller integrated circuit, a display panel, and a storage medium. The method includes: converting first data into a first data voltage signal using a first data voltage, in response to a set condition being reached, sending the first data voltage signal to a chip on film integrated circuit, the chip on film integrated circuit identifies the first data voltage signal to obtain a second data; acquiring the second data from the chip on film integrated circuit, determining that the chip on film integrated circuit fails to identify the first data in response to the second data being different from the first data; and adjusting the first data voltage until a second data voltage signal converted from the first data using a second data voltage after adjustment being successfully identified by the chip on film integrated circuit.

Abstract: Provided is an illumination device comprising a support structure and a light-emitting component being provided on one side of the support structure. The support structure also has an opening on one of its sides and an optical component cooperating with the opening to form an accommodating space. The illumination device also comprises an integrally formed light transmission portion provided above a light-emitting side of the light-emitting component. The light transmission portion is configured to transmit light from the light-emitting component. The illumination device additionally comprises a plurality of sealing portions being integrally formed.

Abstract: A hyperspectral imaging method includes: providing time-domain synchronous mid-infrared ultrashort pulse and near-infrared ultrashort pulse as pump light and signal light, respectively; subjecting the signal light to optical time-stretching to broaden a pulse width of the signal light; directing the time-stretched signal light to a target sample to be detected; directing the pump light to a time delayer to adjust the time when the pump light reaches a silicon-based camera; spatially combining the time-stretched signal light from the target sample with the pump light from the time delayer; directing combined light to a silicon-based camera where the signal light is detected through non-degenerate two-photon absorption of the signal light under the action of the pump light to acquire hyperspectral imaging data; and obtaining an image of the target sample based on the hyperspectral imaging data.

Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.

Abstract: Disclosed are a polyethylene glycol conjugate drug, and a preparation method therefor and the use thereof. Specifically, the present invention relates to a polyethylene glycol conjugate drug represented by formula A or a pharmaceutically acceptable salt thereof, a method for preparing the polyethylene glycol conjugate drug or the pharmaceutically acceptable salt thereof, an intermediate for preparing the polyethylene glycol conjugate drug or the pharmaceutically acceptable salt thereof, a pharmaceutical composition comprising the polyethylene glycol conjugate drug or the pharmaceutically acceptable salt thereof, and the use of the polyethylene glycol conjugate drug or the pharmaceutically acceptable salt thereof in the preparation of a drug.

Abstract: Positive reference spiked in collected sample for use in qualitatively and quantitatively detecting viral RNA.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: A switching converter circuit for switching one end of an inductor therein between plural voltages according to a pulse width modulation (PWM) signal to convert an input voltage to an output voltage. The switching converter circuit has a driver circuit including a high side driver, a low side driver, a high side sensor circuit, and a low side sensor circuit. The high side sensor circuit is configured to sense a gate-source voltage of a high side metal oxide semiconductor field effect transistor (MOSFET), to generate a low side enable signal for enabling the low side driver to switch a low side MOSFET according to the PWM signal. The low side sensor circuit is configured to sense a gate-source voltage of a low side MOSFET, to generate a high side enable signal for enabling the high side driver to switch a high side MOSFET according to the PWM signal.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.

Abstract: Systems and methods directed to returning personalized image-based search results are described. In examples, a query including an image may be received, and a personalized item embedding may be generated based on the image and user profile information associated with a user. Further, a plurality of candidate images may be obtained based on the personalized item embedding. The candidate images may then be ranked according to a predicted level of user engagement for a user, and then diversified to ensure visual diversity among the ranked images. A portion of the diversified images may then be returned in response to an image-based search.

Abstract: A semiconductor device includes a semiconductor substrate; a plurality of channel regions, including a p-type channel region and an n-type channel region, disposed over the semiconductor substrate; and a gate structure. The gate structure includes a gate dielectric layer disposed over the plurality of channel regions and a work function metal (WFM) structure disposed over the gate dielectric layer. The WFM structure includes an n-type WFM layer over the n-type channel region and not over the p-type channel region and further includes a p-type WFM layer over both the n-type WFM layer and the p-type channel region. The gate structure further includes a fill metal layer disposed over the WFM structure and in direct contact with the p-type WFM layer.