Patents by Inventor Kun-Huei Lin
Kun-Huei Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11728364Abstract: A method includes forming image sensors in a semiconductor substrate, thinning the semiconductor substrate from a backside of the semiconductor substrate, forming a dielectric layer on the backside of the semiconductor substrate, and forming a polymer grid on the backside of the semiconductor substrate. The polymer grid has a first refractivity value. The method further includes forming color filters in the polymer grid, wherein the color filters has a second refractivity value higher than the first refractivity value, and forming micro-lenses on the color filters.Type: GrantFiled: August 11, 2020Date of Patent: August 15, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kun-Huei Lin, Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Cheng Yuan Wang
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Publication number: 20230078927Abstract: A method of manufacturing a transistor structure includes forming a plurality of trenches in a substrate, lining the plurality of trenches with a dielectric material, forming first and second substrate regions at opposite sides of the plurality of trenches, and filling the plurality of trenches with a conductive material. The plurality of trenches includes first and second trenches aligned between the first and second substrate regions, and filling the plurality of trenches with the conductive material includes the conductive material extending continuously between the first and second trenches.Type: ApplicationFiled: November 11, 2022Publication date: March 16, 2023Inventors: Kun-Huei LIN, Yun-Wei CHENG, Chun-Hao CHOU, Kuo-Cheng LEE, Chun-Wei CHIA
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Patent number: 11521997Abstract: An IC structure includes a substrate region having a first doping type and including an upper surface, first and second regions within the substrate region, each of the first and second regions having a second doping type opposite the first doping type, and a gate conductor including a plurality of conductive protrusions extending into the substrate region in a direction perpendicular to a plane of the upper surface. The conductive protrusions are electrically connected to each other, and at least a portion of each conductive protrusion is positioned between the first and second regions.Type: GrantFiled: April 16, 2020Date of Patent: December 6, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kun-Huei Lin, Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Chun-Wei Chia
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Publication number: 20220384509Abstract: A method includes forming image sensors in a semiconductor substrate, thinning the semiconductor substrate from a backside of the semiconductor substrate, forming a dielectric layer on the backside of the semiconductor substrate, and forming a polymer grid on the backside of the semiconductor substrate. The polymer grid has a first refractivity value. The method further includes forming color filters in the polymer grid, wherein the color filters has a second refractivity value higher than the first refractivity value, and forming micro-lenses on the color filters.Type: ApplicationFiled: August 9, 2022Publication date: December 1, 2022Inventors: Kun-Huei Lin, Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Cheng Yuan Wang
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Publication number: 20220359590Abstract: A method of detecting electromagnetic radiation includes illuminating a photodiode of a pixel sensor with electromagnetic radiation, using vertical gate structures of a transfer transistor to couple a cathode of the photodiode to an internal node of the pixel sensor, thereby generating an internal node voltage level, and generating an output voltage level of the pixel sensor based on the internal node voltage level.Type: ApplicationFiled: July 22, 2022Publication date: November 10, 2022Inventors: Kun-Huei LIN, Yun-Wei CHENG, Chun-Hao CHOU, Kuo-Cheng LEE, Chun-Wei CHIA
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Publication number: 20220052096Abstract: A method includes forming image sensors in a semiconductor substrate, thinning the semiconductor substrate from a backside of the semiconductor substrate, forming a dielectric layer on the backside of the semiconductor substrate, and forming a polymer grid on the backside of the semiconductor substrate. The polymer grid has a first refractivity value. The method further includes forming color filters in the polymer grid, wherein the color filters has a second refractivity value higher than the first refractivity value, and forming micro-lenses on the color filters.Type: ApplicationFiled: August 11, 2020Publication date: February 17, 2022Inventors: Kun-Huei Lin, Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Cheng Yuan Wang
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Publication number: 20210327947Abstract: An IC structure includes a substrate region having a first doping type and including an upper surface, first and second regions within the substrate region, each of the first and second regions having a second doping type opposite the first doping type, and a gate conductor including a plurality of conductive protrusions extending into the substrate region in a direction perpendicular to a plane of the upper surface. The conductive protrusions are electrically connected to each other, and at least a portion of each conductive protrusion is positioned between the first and second regions.Type: ApplicationFiled: April 16, 2020Publication date: October 21, 2021Inventors: Kun-Huei LIN, Yun-Wei CHENG, Chun-Hao CHOU, Kuo-Cheng LEE, Chun-Wei CHIA
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Patent number: 10276616Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first light-sensing region and a second light-sensing region adjacent to the first light-sensing region. The image sensor device includes an isolation structure in the semiconductor substrate and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a reflective grid over the isolation structure and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a first color filter over the first light-sensing region and extending into a first trench of the reflective grid. The image sensor device includes a second color filter over the second light-sensing region and extending into the first trench to be in direct contact with the first color filter in the first trench.Type: GrantFiled: August 31, 2017Date of Patent: April 30, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kun-Huei Lin, Yin-Chieh Huang, Yun-Wei Cheng, Yi-Hsing Chu, Cheng-Yuan Li, Chun-Hao Chou
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Publication number: 20190067356Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first light-sensing region and a second light-sensing region adjacent to the first light-sensing region. The image sensor device includes an isolation structure in the semiconductor substrate and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a reflective grid over the isolation structure and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a first color filter over the first light-sensing region and extending into a first trench of the reflective grid. The image sensor device includes a second color filter over the second light-sensing region and extending into the first trench to be in direct contact with the first color filter in the first trench.Type: ApplicationFiled: August 31, 2017Publication date: February 28, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kun-Huei LIN, Yin-Chieh HUANG, Yun-Wei CHENG, Yi-Hsing CHU, Cheng-Yuan LI, Chun-Hao CHOU
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Patent number: 9917132Abstract: A semiconductor device includes a substrate, light sensing devices, at least one infrared radiation sensing device, a transparent insulating layer, an infrared radiation cut layer, a color filter layer and an infrared radiation color filter layer. The light sensing devices and the at least one infrared radiation sensing device are disposed in the substrate and are adjacent to each other. The transparent insulating layer is disposed on the substrate overlying the light sensing devices and the at least one infrared radiation sensing device. The infrared radiation cut layer is disposed on the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation. The color filter layer is disposed on the infrared radiation cut layer. The infrared radiation color filter layer is disposed on the transparent insulating layer overlying the at least one infrared radiation sensing device.Type: GrantFiled: June 28, 2017Date of Patent: March 13, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tsung-Han Tsai, Kun-Huei Lin, Chun-Hao Chou, Tzu-Hsuan Hsu, Ching-Chun Wang, Kuo-Cheng Lee, Yung-Lung Hsu
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Publication number: 20170301720Abstract: A semiconductor device includes a substrate, light sensing devices, at least one infrared radiation sensing device, a transparent insulating layer, an infrared radiation cut layer, a color filter layer and an infrared radiation color filter layer. The light sensing devices and the at least one infrared radiation sensing device are disposed in the substrate and are adjacent to each other. The transparent insulating layer is disposed on the substrate overlying the light sensing devices and the at least one infrared radiation sensing device. The infrared radiation cut layer is disposed on the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation. The color filter layer is disposed on the infrared radiation cut layer. The infrared radiation color filter layer is disposed on the transparent insulating layer overlying the at least one infrared radiation sensing device.Type: ApplicationFiled: June 28, 2017Publication date: October 19, 2017Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tsung-Han TSAI, Kun-Huei LIN, Chun-Hao CHOU, Tzu-Hsuan HSU, Ching-Chun WANG, Kuo-Cheng LEE, Yung-Lung HSU
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Patent number: 9711560Abstract: A semiconductor device includes a substrate, light sensing devices, at least one infrared radiation sensing device, a transparent insulating layer, an infrared radiation cut layer, a color filter layer and an infrared radiation color filter layer. The light sensing devices and the at least one infrared radiation sensing device are disposed in the substrate and are adjacent to each other. The transparent insulating layer is disposed on the substrate overlying the light sensing devices and the at least one infrared radiation sensing device. The infrared radiation cut layer is disposed on the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation. The color filter layer is disposed on the infrared radiation cut layer. The infrared radiation color filter layer is disposed on the transparent insulating layer overlying the at least one infrared radiation sensing device.Type: GrantFiled: December 5, 2014Date of Patent: July 18, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tsung-Han Tsai, Kun-Huei Lin, Chun-Hao Chou, Tzu-Hsuan Hsu, Ching-Chun Wang, Kuo-Cheng Lee, Yung-Lung Hsu
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Patent number: 9659859Abstract: A semiconductor device includes a first layer including a number of first layer metal pads, a second layer formed on top of the first layer, the second layer including a number of second layer metal pads, and vias connecting the first layer metal pads to the second layer metal pads. A surface area overlap between the first layer metal pads and the second layer metal pads is below a defined threshold.Type: GrantFiled: July 27, 2015Date of Patent: May 23, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: I-Chih Chen, Ying-Hao Chen, Chi-Cherng Jeng, Volume Chien, Fu-Tsun Tsai, Kun-Huei Lin
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Patent number: 9559135Abstract: A semiconductor device includes a first semiconductor chip comprising a first metallic structure and a second semiconductor chip comprising a second metallic structure. The second semiconductor chip is bonded with the first semiconductor chip by a first conductive plug. A second conductive plug extends from the first metallic structure and into a substrate of the first semiconductor chip. The first conductive plug connects the first metallic structure and the second metallic structure, wherein a conductive liner is along a sidewall of the first conductive plug or the second conductive plug.Type: GrantFiled: August 20, 2014Date of Patent: January 31, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Cheng-Yuan Li, Kun-Huei Lin, Chun-Hao Chou, Kuo-Cheng Lee, Yung-Lung Hsu
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Publication number: 20160163760Abstract: A semiconductor device includes a substrate, light sensing devices, at least one infrared radiation sensing device, a transparent insulating layer, an infrared radiation cut layer, a color filter layer and an infrared radiation color filter layer. The light sensing devices and the at least one infrared radiation sensing device are disposed in the substrate and are adjacent to each other. The transparent insulating layer is disposed on the substrate overlying the light sensing devices and the at least one infrared radiation sensing device. The infrared radiation cut layer is disposed on the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation. The color filter layer is disposed on the infrared radiation cut layer. The infrared radiation color filter layer is disposed on the transparent insulating layer overlying the at least one infrared radiation sensing device.Type: ApplicationFiled: December 5, 2014Publication date: June 9, 2016Inventors: Tsung-Han TSAI, Kun-Huei LIN, Chun-Hao CHOU, Tzu-Hsuan HSU, Ching-Chun WANG, Kuo-Cheng LEE, Yung-Lung HSU
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Patent number: 9324752Abstract: The disclosure provides an image sensor device and a manufacturing method. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a light blocking structure in the semiconductor substrate and adjacent to the light sensing region. A sidewall of the light blocking structure is a curved surface.Type: GrantFiled: February 27, 2014Date of Patent: April 26, 2016Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Volume Chien, Kun-Huei Lin, Chia-Yu Wei, Allen Tseng, Chi-Cherng Jeng, Chuan-Pu Liu
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Publication number: 20160056196Abstract: A semiconductor device includes a first semiconductor chip comprising a first metallic structure and a second semiconductor chip comprising a second metallic structure. The second semiconductor chip is bonded with the first semiconductor chip by a first conductive plug. A second conductive plug extends from the first metallic structure and into a substrate of the first semiconductor chip. The first conductive plug connects the first metallic structure and the second metallic structure, wherein a conductive liner is along a sidewall of the first conductive plug or the second conductive plug.Type: ApplicationFiled: August 20, 2014Publication date: February 25, 2016Inventors: CHENG-YUAN LI, KUN-HUEI LIN, CHUN-HAO CHOU, KUO-CHENG LEE, YUNG-LUNG HSU
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Publication number: 20150333007Abstract: A semiconductor device includes a first layer including a number of first layer metal pads, a second layer formed on top of the first layer, the second layer including a number of second layer metal pads, and vias connecting the first layer metal pads to the second layer metal pads. A surface area overlap between the first layer metal pads and the second layer metal pads is below a defined threshold.Type: ApplicationFiled: July 27, 2015Publication date: November 19, 2015Inventors: I-Chih Chen, Ying-Hao Chen, Chi-Cherng Jeng, Volume Chien, Fu-Tsun Tsai, Kun-Huei Lin
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Publication number: 20150243696Abstract: The disclosure provides an image sensor device and a manufacturing method. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a light blocking structure in the semiconductor substrate and adjacent to the light sensing region. A sidewall of the light blocking structure is a curved surface.Type: ApplicationFiled: February 27, 2014Publication date: August 27, 2015Applicant: Taiwan Semiconductor Manufacturing Co., LtdInventors: Volume CHIEN, Kun-Huei LIN, Chia-Yu WEI, Allen TSENG, Chi-Cherng JENG, Chuan-Pu LIU
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Patent number: 9093430Abstract: A semiconductor device includes a first layer including a number of first layer metal pads, a second layer formed on top of the first layer, the second layer including a number of second layer metal pads, and vias connecting the first layer metal pads to the second layer metal pads. A surface area overlap between the first layer metal pads and the second layer metal pads is below a defined threshold.Type: GrantFiled: October 21, 2013Date of Patent: July 28, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: I-Chih Chen, Ying-Hao Chen, Chi-Cherng Jeng, Volume Chien, Fu-Tsun Tsai, Kun-Huei Lin