Patents by Inventor Kun-Mao Wu

Kun-Mao Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HIGH DENSITY CAPACITOR
    Publication number: 20230299124
    Abstract: A method of forming a capacitor is disclosed. The method includes forming a portion of a metallization layer on a substrate, forming a via layer on the substrate, and forming a first electrode between the metallization layer and the via layer, where the first electrode is electrically connected to the metallization layer. The method also includes forming a second electrode between the metallization layer and the via layer, where the second electrode is electrically connected to the via layer, and forming a dielectric layer between the first electrode and the second electrode, where the first electrode is not electrically connected to any other conductors other than through the metallization layer, and where the second electrode is not electrically connected to any conductors other than through the via layer.
    Type: Application
    Filed: March 21, 2022
    Publication date: September 21, 2023
    Inventors: Pei-Jen Wang, Ching-Hung Kao, Tzy-Kuang Lee, Meng-Chang Ho, Kun-Mao Wu
  • Forming metal-insulator-metal capacitors over a top metal layer
    Patent number: 8741732
    Abstract: A plurality of metal layers includes a top metal layer. An Ultra-Thick Metal (UTM) layer is disposed over the top metal layer, wherein no additional metal layer is located between the UTM layer and the top metal layer. A Metal-Insulator-Metal (MIM) capacitor is disposed under the UTM layer and over the top metal layer.
    Type: Grant
    Filed: October 4, 2013
    Date of Patent: June 3, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kun-Mao Wu, Chih-Hsun Lin, Yu-Lung Yeh, Kuan-Chi Tsai
  • Forming Metal-Insulator-Metal Capacitors Over a Top Metal Layer
    Publication number: 20140038384
    Abstract: A plurality of metal layers includes a top metal layer. An Ultra-Thick Metal (UTM) layer is disposed over the top metal layer, wherein no additional metal layer is located between the UTM layer and the top metal layer. A Metal-Insulator-Metal (MIM) capacitor is disposed under the UTM layer and over the top metal layer.
    Type: Application
    Filed: October 4, 2013
    Publication date: February 6, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kun-Mao Wu, Chih-Hsun Lin, Yu-Lung Yeh, Kuan-Chi Tsai
  • Forming metal-insulator-metal capacitors over a top metal layer
    Patent number: 8552486
    Abstract: A plurality of metal layers includes a top metal layer. An Ultra-Thick Metal (UTM) layer is disposed over the top metal layer, wherein no additional metal layer is located between the UTM layer and the top metal layer. A Metal-Insulator-Metal (MIM) capacitor is disposed under the UTM layer and over the top metal layer.
    Type: Grant
    Filed: January 17, 2011
    Date of Patent: October 8, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kun-Mao Wu, Chih-Hsun Lin, Yu-Lung Yeh, Kuan-Chi Tsai
  • Forming Metal-Insulator-Metal Capacitors Over a Top Metal Layer
    Publication number: 20120181657
    Abstract: A plurality of metal layers includes a top metal layer. An Ultra-Thick Metal (UTM) layer is disposed over the top metal layer, wherein no additional metal layer is located between the UTM layer and the top metal layer. A Metal-Insulator-Metal (MIM) capacitor is disposed under the UTM layer and over the top metal layer.
    Type: Application
    Filed: January 17, 2011
    Publication date: July 19, 2012
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kun-Mao Wu, Chih-Hsun Lin, Yu-Lung Yeh, Kuan-Chi Tsai