Abstract: A ferroelectric memory device includes a lower interlayer dielectric on a semiconductor substrate, a plurality of ferroelectric capacitors, and a plate line. The ferroelectric capacitors are on the lower interlayer dielectric. The plate line extends across and electrically connects to surfaces of at least two adjacent ones of the plurality of ferroelectric capacitors.

Abstract: A ferroelectric memory device includes an interlayer dielectric layer and a a protection adhesion layer formed thereon. A buried contact extends through the protection adhesion layer and the interlayer dielectric layer. A lower electrode is on a portion of the protection adhesion layer that is adjacent to the buried contact and on the buried contact. A ferroelectric layer covers the lower electrode and the protection adhesion layer. An upper electrode overlaps the lower electrode and covers the ferroelectric layer. Related methods are also disclosed.

Abstract: A method of forming a ferroelectric capacitor includes forming a lower electrode on a substrate. The lower electrode is oxidized to form a metal oxide film. A ferroelectric film is formed on the metal oxide film while reduction of the oxygen content of the metal oxide film is inhibited. An upper electrode is formed on the ferroelectric film.

Abstract: A ferroelectric memory device includes an interlayer dielectric layer and a a protection adhesion layer formed thereon. A buried contact extends through the protection adhesion layer and the interlayer dielectric layer. A lower electrode is on a portion of the protection adhesion layer that is adjacent to the buried contact and on the buried contact. A ferroelectric layer covers the lower electrode and the protection adhesion layer. An upper electrode overlaps the lower electrode and covers the ferroelectric layer. Related methods are also disclosed.

Abstract: A method of forming a ferroelectric capacitor includes forming a lower electrode on a substrate. The lower electrode is oxidized to form a metal oxide film. A ferroelectric film is formed on the metal oxide film while reduction of the oxygen content of the metal oxide film is inhibited. An upper electrode is formed on the ferroelectric film.

Abstract: Ferroelectric capacitors, etc. are disclosed that include a conductive plug that has a base portion of a first cross-sectional width and a protruding portion that protrudes from the base portion and has a second cross-sectional width that is less than the first cross-sectional width. A conductive layer of the ferroelectric capacitor is on the protruding portion opposite the base portion. Related methods are also disclosed.

Abstract: The present invention discloses a method of forming a ferroelectric random access memory (FRAM) of a capacitor over bit-line (COB) structure. In the method, a capacitor contact plug is formed at a cell region and a stud is formed at a core region in a semiconductor substrate. An oxygen barrier pattern is formed to cover the stud. A ferroelectric capacitor comprising a lower electrode, a ferroelectric pattern, and an upper electrode is formed over the capacitor contact plug. An interlayer dielectric layer is formed over substantially the entire surface of the semiconductor substrate and patterned. Next, the interlayer dielectric layer is removed from the stud region and an interconnection contact hole is formed. A contact plug is formed in the interconnection contact hole by sputtering and simultaneously an interconnection layer is formed on the interlayer dielectric layer.

Abstract: A ferroelectric memory device includes a lower interlayer dielectric on a semiconductor substrate, a plurality of ferroelectric capacitors, and a plate line. The ferroelectric capacitors are on the lower interlayer dielectric. The plate line extends across and electrically connects to surfaces of at least two adjacent ones of the plurality of ferroelectric capacitors.

Abstract: A method of forming a ferroelectric capacitor includes forming a lower electrode on a substrate. The lower electrode is oxidized to form a metal oxide film. A ferroelectric film is formed on the metal oxide film while reduction of the oxygen content of the metal oxide film is inhibited. An upper electrode is formed on the ferroelectric film.

Abstract: Ferroelectric capacitors, etc. are disclosed that include a conductive plug that has a base portion of a first cross-sectional width and a protruding portion that protrudes from the base portion and has a second cross-sectional width that is less than the first cross-sectional width. A conductive layer of the ferroelectric capacitor is on the protruding portion opposite the base portion. Related methods are also disclosed.

Abstract: Ferroelectric capacitors, etc. are disclosed that include a conductive plug that has a base portion of a first cross-sectional width and a protruding portion that protrudes from the base portion and has a second cross-sectional width that is less than the first cross-sectional width. A conductive layer of the ferroelectric capacitor is on the protruding portion opposite the base portion. Related methods are also disclosed.

Abstract: The present invention discloses a method of forming a ferroelectric random access memory (FRAM) of a capacitor over bit-line (COB) structure. In the method, a capacitor contact plug is formed at a cell region and a stud is formed at a core region in a semiconductor substrate. An oxygen barrier pattern is formed to cover the stud. A ferroelectric capacitor comprising a lower electrode, a ferroelectric pattern, and an upper electrode is formed over the capacitor contact plug. An interlayer dielectric layer is formed over substantially the entire surface of the semiconductor substrate and patterned. Next, the interlayer dielectric layer is removed from the stud region and an interconnection contact hole is formed. A contact plug is formed in the interconnection contact hole by sputtering and simultaneously an interconnection layer is formed on the interlayer dielectric layer.