Abstract: An edge enhancement method and an edge enhancement apparatus in digital image scalar-up circuit are provided. A band-pass filtering process is performed to an input image pixel in multiple directions to generate multiple sum-of-border values which are summed up to generate an overall sum-of-border value. A first gain and a second gain are provided according to the overall sum-of-border value. A high-pass filtering process and a low-pass filtering process are performed to the input image pixel to obtain border and plain components which are multiplied by the first gain and second gain, respectively. The gained border component and plain component are summed and added to the original pixel to obtain a new pixel.

Abstract: An interpolation method for producing full color images is disclosed. For a blue pixel, an interpolated green value is determined by green values of adjacent green pixels, and an interpolated red value is determined by red values of neighboring red pixels and a modification value. For a red pixel, an interpolated green value is determined by green values of adjacent green pixels, and an interpolated blue value is determined by blue values of neighboring blue pixels and a modification value. For a green pixel, an interpolated green value is determined by original green value of the green pixel and green values of neighboring green pixels, an interpolated red value is determined by red value of at least an adjacent red pixel and a modification value, and an interpolated blue value is determined by blue value of at least an adjacent blue pixel and a modification value.

Abstract: A semiconductor diode with hydrogen detection capability includes a semiconductor substrate, a doped semiconductor active layer formed on the substrate and made from a compound having the formula XYZ, in which X is a Group III element, Y is another Group III element different from X, and Z is a Group V element, a semiconductor contact-enhancing layer formed on the active layer and made from a compound having the formula MN, in which M is a Group III element, and N is a Group V element, an ohmic contact layer formed on the semiconductor contact-enhancing layer, and a Schottky barrier contact layer formed on the active layer. The Schottky barrier contact layer is made from a metal that is capable of dissociating a hydrogen molecule into hydrogen atoms.

Abstract: A semiconductor diode with hydrogen detection capability includes a semiconductor substrate, a doped semiconductor active layer formed on the substrate and made from a compound having the formula XYZ, in which X is a Group III element, Y is another Group III element different from X, and Z is a Group V element, an ohmic contact layer formed on the active layer, and a Schottky barrier contact layer formed on the active layer so as to provide a Schottky barrier therebetween. The Schottky barrier contact layer is made from a metal that is capable of dissociating a hydrogen molecule into hydrogen atoms.

Abstract: An edge enhancement method and an edge enhancement apparatus in digital image scalar-up circuit are provided. A band-pass filtering process is performed to an input image pixel in multiple directions to generate multiple sum-of-border values which are summed up to generate an overall sum-of-border value. A first gain and a second gain are provided according to the overall sum-of-border value. A high-pass filtering process and a low-pass filtering process are performed to the input image pixel to obtain border and plain components which are multiplied by the first gain and second gain, respectively. The gained border component and plain component are summed and added to the original pixel to obtain a new pixel.

Abstract: The invention relates to a high-breakdown voltage heterostructure field-effect transistor (FET), which can be used under a high temperature condition. The FET device from bottom upward in succession includes a semiconductor substrate, a buffer layer, a delta-doped sheet, an undoped layer, a sub-channel layer, an active channel layer, a gate layer, and an ohmic contact layer.

Abstract: The invention relates to a high-breakdown voltage heterostructure field-effect transistor (FET), which can be used under a high temperature condition. The FET device from bottom upward in succession includes a semiconductor substrate, a buffer layer, a delta-doped sheet, an undoped layer, a sub-channel layer, an active channel layer, a gate layer, and an ohmic contact layer.

Abstract: An organic light emission display module is formed by an organic light emission device panel and a driving circuit board. In manufacturing the organic light emission device panel, electrodes are extended to the edges of the panel. The bonding pads are produced by forming aluminum films. The driving circuit board is made of thin printed circuit board, and bonding pads are manufactured at the edges of the printed circuit board, which are corresponding to the bonding pads of the organic light emission device panel, respectively. The driving circuit board is adhered to the organic light emission device panel, and the each bonding pad of the organic light emission device panel is connected to a respective bonding pad of the driving circuit board. Epoxy resin is filled into the bonding area and gaps between the printed circuit board and the organic light emission device panel.

Abstract: An optical compensation arrangement using tilted-optical-axis compensation films with negative birefringence for low-twist-angle nematic liquid crystal cells to achieve better viewing angle characteristics than a regular 90.degree.-twist TN cell, with similar high contrast ratio and brightness as the regular TN cell near normal incidence at a comparable operating voltage.

Abstract: A liquid-crystal projection display system with higher efficiency is provided. The liquid-crystal projection display system comprises a double-layer square-pillar-like integrator, including an inner layer and an outer layer, having a polarization-separating thin film formed between the inner layer and the outer layer. The system also includes a converging light source for generating light converged at a point near one end surface of the double-layer square-pillar-like integrator, so that most light emitted from the light source enters the double-layer square-pillar-like integrator, and different polarized light is transmitted by being totally reflected off of surfaces of the inner layer and the outer layer respectively. A first lens is provided for forming real light spots on an image plane from virtual light spots formed by totally reflecting the different polarized light transmitted in the double-layer square-pillar-like integrator.