Abstract: Provided is a method for manufacturing a metal-oxide thin-film transistor (TFT). The method includes: forming, on a base substrate, an active layer including a metal oxide semiconductor, and a functional layer laminated on the active layer and containing a lanthanide element; and annealing the active layer and the functional layer, such that the lanthanide element in the functional layer is diffused into the active layer.

Abstract: A fabricating method of a high electron mobility transistor includes providing a substrate. Then, a channel layer, an active layer, a P-type group III-V compound material layer, a metal compound material layer, a hard mask material layer and a patterned photoresist are formed to cover the substrate. Later, a dry etching process is performed to etch the hard mask material layer and the metal compound material layer to form a hard mask and a metal compound layer by taking the patterned photoresist as a mask. During the dry etching process, a spacer generated by by-products is formed to surround the patterned photoresist, the hard mask and the metal compound layer. After the dry etching process, the P-type group III-V compound material layer is etched by taking the spacer and the patterned photoresist as a mask.

Abstract: The present disclosure provides a wireless communication system including a first host computer, a communication dongle, a second host computer and an input device. The communication dongle is connected to the first host computer via a USB interface, connected to the second host computer via a Bluetooth interface, and connected to the input device via a wireless interface. The first host computer has first application software for intercepting the operating signal(s) of the input device and transferring, via the communication dongle, to the second host computer to be executed thereby. The first application software also controls the first host computer to ignore the operating signal(s) during the operating signal(s) is being transferred to the second host computer.

Abstract: A high-nickel ternary core-shell precursor for a lithium battery, a positive electrode material and a preparation method therefor. The chemical structural formula of the precursor is zNi(C4H7N2O2)2—Nix-zM1yM21-x-y(OH)2, wherein M1 and M2 are two of cobalt, aluminum, and manganese. The preparation method comprises: pumping a prepared metal salt solution, a dimethylglyoxime-ammonia water composite solution, and an ammonia water solution into a reaction kettle, maintaining the pH of a reaction system, and controlling the reaction time to obtain a sphere-like precursor inner core with a structural formula of Ni(C4H7N2O2)2; pumping the metal salt solution and the ammonia water solution, stopping pumping the dimethylglyoxime-ammonia water composite solution, pumping a sodium hydroxide solution to obtain a sphere-like core-shell precursor, washing, drying, sieving and deironing the precursor, mixing with a lithium source, and calcining to prepare the positive electrode material.

Abstract: A barrier structure for bearing a high-energy impact and construction method thereof are provided. The barrier structure includes a supporting pile array arranged between two opposite mountain slope surfaces. The supporting pile array is arranged in a straight line and includes two or more supporting piles. The two or more supporting piles are fixed at a lower part of a mountain. A barrier net is connected to the two or more supporting piles. The barrier net passes through the supporting pile array and extends to the two opposite mountain slope surfaces. The barrier net is fixed on the two opposite mountain slope surfaces. Pull plates are disposed on the two opposite mountain slope surfaces, and one side of each of the pull plates is fixed to a corresponding slope surface of the two opposite mountain slope surfaces through reverse prestressed anchor cables.

Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, and a light-sensing region close to the front surface. The image sensor device includes an insulating layer covering the back surface and extending into the semiconductor substrate. The protection layer has a first refractive index, and the first refractive index is less than a second refractive index of the semiconductor substrate and greater than a third refractive index of the insulating layer, and the protection layer conformally and continuously covers the back surface and extends into the semiconductor substrate. The image sensor device includes a reflective structure surrounded by insulating layer in the semiconductor substrate.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: A layout includes a first and a second standard cells abutting along a boundary line. The first cell includes first fins. An edge of the first fins closest to and away from the boundary line by a distance D1. A first gate line over-crossing the first fins protrudes from the edge by a length L1. The second cell includes second fins. An edge of the second fins closest to and away from the boundary line by a distance D2. A second gate line over-crossing the second fins protrudes from the edge by a length L2. Two first dummy gate lines at two sides of the first fins and two second dummy lines at two sides of the second fins are respectively away from the boundary line by a distance S. The lengths L1 and L2, the distances S, D1 and D2 have the relationships: L1?D1?S, L2?D2?S, and D1?D2.

Abstract: A barrier structure for bearing a high-energy impact and construction method thereof are provided. The barrier structure includes a supporting pile array arranged between two opposite mountain slope surfaces. The supporting pile array is arranged in a straight line and includes two or more supporting piles. The two or more supporting piles are fixed at a lower part of a mountain. A barrier net is connected to the two or more supporting piles. The barrier net passes through the supporting pile array and extends to the two opposite mountain slope surfaces. The barrier net is fixed on the two opposite mountain slope surfaces. Pull plates are disposed on the two opposite mountain slope surfaces, and one side of each of the pull plates is fixed to a corresponding slope surface of the two opposite mountain slope surfaces through reverse prestressed anchor cables.

Abstract: The present disclosure provides an N protein epitope mutation marker for preparing an epitope deletion-marked vaccine strain of type II porcine reproductive and respiratory syndrome virus (PRRSV) and use thereof, belonging to the technical field of biological products. In the mutation marker, one or more amino acids are mutated based on an epitope sequence at positions 92 to 103 of a C-terminal of an N protein of the type II PRRSV; and the epitope mutation marker has an amino acid sequence shown in SEQ ID NO: 1, where X1 is selected from the group consisting of T, P, and A; and X2 is selected from the group consisting of V and A.

Abstract: A method includes forming a first transistor, which includes forming a first gate dielectric layer over a first channel region in a substrate and forming a first work-function layer over the first gate dielectric layer, wherein forming the first work-function layer includes depositing a work-function material using first process conditions to form the work-function material having a first proportion of different crystalline orientations and forming a second transistor, which includes forming a second gate dielectric layer over a second channel region in the substrate and forming a second work-function layer over the second gate dielectric layer, wherein forming the second work-function layer includes depositing the work-function material using second process conditions to form the work-function material having a second proportion of different crystalline orientations.

Abstract: The capability to print to a portable document format (PDF) file is provided in a virtualized computing environment that supports a virtual desktop infrastructure (VDI). Printing-related properties, of local printers coupled to a client device, are provided to a host, so that virtual printers at the host can be configured with the printing-related properties. A simulator may be provided at the host to receive the printing-related properties from the client device and to receive a query from a virtualized computing instance for the printing-related properties, instead of the query being directly sent to the client device.

Abstract: This application discloses a method for identifying an intelligent surface device, a communication device, and an intelligent surface device, which relate to the field of wireless communication technologies. The method for identifying an intelligent surface device in embodiments of this application includes: sending, by a first communication device, a first signal; and obtaining, by the first communication device, identification information related to an intelligent surface device, where the identification information is information obtained by detecting an echo signal of the first signal by the first communication device, or information that is obtained by detecting an echo signal of the first signal by a second communication device and then is forwarded to the first communication device.

Abstract: A controlled-release fertilizer including an inside core of water-soluble fertilizer particle and an outer layer coating material, wherein the coating material is a bentonite modified or sodium bentonite modified waterborne polymer; and a preparation method including: weighing the fertilizer core particle and the modified waterborne polymer emulsion according to the amount, preparing a semi-processed coating controlled-release fertilizer by using a coating machine, and placing the semi-processed coating controlled-release fertilizer in an oven for postprocessing to improve the compactness of the film material.

Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: A wafer-level assembly method for a micro hemispherical resonator gyroscope includes: after independently manufactured glass substrates are softened and deformed at a high temperature, forming a micro hemispherical resonator on the glass substrate; forming glass substrate alignment holes at both ends of the glass substrate by laser ablation; aligning and fixing a plurality of identical micro hemispherical resonators on a wafer fixture by using the alignment holes as a reference, and then performing operations by using the wafer fixture as a unit to implement subsequent processes that include: releasing the micro hemispherical resonators, metallizing the surface, fixing to the planar electrode substrates, separating the wafer fixture and cleaning to obtain a micro hemispherical resonator gyroscope driven by a bottom planar electrode substrate.

Abstract: A method for manufacturing a semiconductor structure is provided. The method includes: providing a substrate and a dielectric layer on the substrate; forming a hole in the dielectric layer; forming an initial barrier material layer and a conductive layer on an upper surface of the dielectric layer and in the hole; removing part of the initial barrier material layer and part of the conductive layer to form a barrier material layer and a via element in the hole respectively and expose the upper surface of the dielectric layer. An upper surface of the barrier material layer is higher than the upper surface of the dielectric layer.

Abstract: A method of cutting fins includes the following steps. A photomask including a snake-shape pattern is provided. A photoresist layer is formed over fins on a substrate. A photoresist pattern in the photoresist layer corresponding to the snake-shape pattern is formed by exposing and developing. The fins are cut by transferring the photoresist pattern and etching cut parts of the fins.

Abstract: A method for manufacturing a high electron mobility transistor device includes providing a substrate. A channel material, a barrier material, a polarization adjustment material and a conductive material are formed on the substrate. A hard mask layer is formed on the conductive material. The conductive material is patterned to form a conductive layer by using the hard mask layer as a mask. A plurality of protection layers is formed on sidewalls of the hard mask layer and the conductive layer. The polarization adjustment material is patterned to form a polarization adjustment layer by using the plurality of protection layers and the hard mask as masks. The plurality of protection layers is removed. A portion of the conductive layer is laterally removed to form a first gate conductive layer.