Abstract: An apparatus and system for integrating flow cytometry measurements into a medical procedure. An example integrated flow sampling apparatus may include a discharge tube, fluidly connecting a catheter within a patient to a drainage bag. In addition, the apparatus may include an integrated flow sampling cassette. The integrated flow sampling cassette may include a bypass tube having two ends, each fluidly connected to the discharge tube. The bypass tube may further include a flow detection region enabling detection of a flow of discharge fluid through the bypass tube; an imaging region enabling detection of cells within the flow of discharge fluid; and a flow control valve enabling impedance of the flow of discharge fluid through the bypass tube. The apparatus may additionally include protrusions extending into the discharge tube and facilitating the entry of the discharge fluid into the bypass tube and subsequently back into the discharge tube.

Abstract: Systems and methods for monitoring intravenous (IV) fluid bags are provided. The system includes a replaceable unit comprising a sensor comprising a pressure sensor configured to measure hydrostatic pressure, an electrical connector coupling the sensor to a controller component, a cannula configurable for insertion into a fluid port of an IV fluid bag, and an IV tube coupling the sensor to an IV fluid bag via the cannula. The system further includes the controller component configured to retrieve data representative of hydrostatic pressure from the sensor and calculate remaining fluid volume, discharge rate, and flow occlusion based on the retrieved data.

Abstract: A system and apparatus for utilizing invasive techniques to determine the blood pressure of a patient, are provided. An example system may include a pressure sensor, an intravenous fluid supply bag, and a hollow needle configured to penetrate a blood vessel of a patient. An intravenous supply tube may fluidly connect the pressure sensor to the hollow needle. A lumen filled with an incompressible fluid may be disposed within the intravenous supply tube. The lumen may be coupled to the pressure sensor at one end and terminate in a flexible membrane at the other end. The flexible membrane may deform in response to a blood pressure wave transmitted from the blood vessel of the patient, and transmit the blood pressure wave through the incompressible fluid and to the pressure sensor. The pressure sensor may determine a blood pressure measurement based at least in part on the received blood pressure wave.

Abstract: Systems and methods for monitoring intravenous (IV) fluid bags are provided. The system includes a replaceable unit comprising a sensor comprising a pressure sensor configured to measure hydrostatic pressure, an electrical connector coupling the sensor to a controller component, a cannula configurable for insertion into a fluid port of an IV fluid bag, and an IV tube coupling the sensor to an IV fluid bag via the cannula. The system further includes the controller component configured to retrieve data representative of hydrostatic pressure from the sensor and calculate remaining fluid volume, discharge rate, and flow occlusion based on the retrieved data.

Abstract: Example methods, apparatuses, and computer program products for measuring fluid volumes are provided. An example fluid volume measuring assembly includes a first perforated tube, a total fluid volume measuring device, and a non-blood fluid volume measuring device. In some examples, the total fluid volume measuring device includes a membrane sack positioned in the first perforated tube and a first pressure sensor positioned in the membrane sack. In some examples, the non-blood fluid volume measuring device includes a second perforated tube covered by a filter paper and positioned in the first perforated tube and a second pressure sensor positioned in the second perforated tube.

Abstract: Methods, apparatuses, and computer program products associated with flow sensing devices are provided. An example flow sensing device may comprise a controller component in electronic communication with a flow sensing component that is configured to: monitor at least one flow sensing component output, detect an air bubble at a location adjacent a surface of the flow sensing component based at least in part on the at least one flow sensing component output, and determine whether the air bubble satisfies an air bubble condition defining one or more predetermined characteristics.

Abstract: Sensors, methods, and computer program products for air bubble detection and fluid composition determinations are provided. An example sensor device for use with fluid flow systems includes a force pulse generator coupled with a fluid flow system that emits a force pulse and a force pulse sensor coupled with the fluid flow system. The force pulse sensor receives the force pulse emitted by the force pulse generator and determines the fluid flow system's transient response to the force pulse. Based upon the transient response, the force pulse sensor determines an operating condition of the fluid flow system. The operating condition may be indicative of the presence of an air bubble within the fluid flow system or may be indicative of a composition of a fluid within the fluid flow system. The force pulse sensor may further determine the amplitude and rate of decay of the transient response.

Abstract: A temperature monitor is provided for use on a conveyor belt. The temperature monitor includes a first wall and a second wall. The first wall and the second wall are generally parallel to one another. The temperature monitor also includes a first anchor and a second anchor. The first wall is attached to the first anchor at a first end and the first wall is attached to the second anchor at a second end. The second wall is attached to the first anchor at a first end and the second wall is attached to the second anchor at a second end. The temperature monitor further includes a temperature deformation mechanism defined between the first wall and the second wall. The temperature deformation mechanism is altered in an instance in which a predetermined temperature is reached. A method of manufacturing a temperature monitor and a temperature monitor system are also provided.

Abstract: Sensors, methods, and computer program products for air bubble detection and fluid composition determinations are provided. An example sensor device for use with fluid flow systems includes a force pulse generator coupled with a fluid flow system that emits a force pulse and a force pulse sensor coupled with the fluid flow system. The force pulse sensor receives the force pulse emitted by the force pulse generator and determines the fluid flow system's transient response to the force pulse. Based upon the transient response, the force pulse sensor determines an operating condition of the fluid flow system. The operating condition may be indicative of the presence of an air bubble within the fluid flow system or may be indicative of a composition of a fluid within the fluid flow system. The force pulse sensor may further determine the amplitude and rate of decay of the transient response.

Abstract: A temperature monitor is provided for use on a conveyor belt. The temperature monitor includes a first wall and a second wall. The first wall and the second wall are generally parallel to one another. The temperature monitor also includes a first anchor and a second anchor. The first wall is attached to the first anchor at a first end and the first wall is attached to the second anchor at a second end. The second wall is attached to the first anchor at a first end and the second wall is attached to the second anchor at a second end. The temperature monitor further includes a temperature deformation mechanism defined between the first wall and the second wall. The temperature deformation mechanism is altered in an instance in which a predetermined temperature is reached. A method of manufacturing a temperature monitor and a temperature monitor system are also provided.

Abstract: A semiconductor device may include a substrate comprising silicon carbide; a drift layer disposed over the substrate doped with a first dopant type; an anode region disposed adjacent to the drift layer, wherein the anode region is doped with a second dopant type; and a junction termination extension disposed adjacent to the anode region and extending around the anode region, wherein the junction termination extension has a width and comprises a plurality of discrete regions separated in a first direction and in a second direction and doped with varying concentrations with the second dopant type, so as to have an effective doping profile of the second conductivity type of a functional form that generally decreases along a direction away from an edge of the primary blocking junction.

Abstract: A semiconductor device includes a substrate including silicon carbide; a drift layer disposed over the substrate including a drift region doped with a first dopant and conductivity type; and a second region, doped with a second dopant and conductivity type, adjacent to the drift region and proximal to a surface of the drift layer. The semiconductor device further includes a junction termination extension adjacent to the second region with a width and discrete regions separated in a first and second direction doped with varying concentrations of the second dopant type, and an effective doping profile of the second conductivity type of functional form that generally decreases away from the edge of the primary blocking junction. The width is less than or equal to a multiple of five times the width of the one-dimensional depletion width, and the charge tolerance of the semiconductor device is greater than 1.0×1013 per cm2.

Abstract: A semiconductor device includes a substrate including silicon carbide; a drift layer disposed over the substrate including a drift region doped with a first dopant and conductivity type; and a second region, doped with a second dopant and conductivity type, adjacent to the drift region and proximal to a surface of the drift layer. The semiconductor device further includes a junction termination extension adjacent to the second region with a width and discrete regions separated in a first and second direction doped with varying concentrations of the second dopant type, and an effective doping profile of the second conductivity type of functional form that generally decreases away from the edge of the primary blocking junction. The width is less than or equal to a multiple of five times the width of the one-dimensional depletion width, and the charge tolerance of the semiconductor device is greater than 1.0×1013 per cm2.

Abstract: A device, such as a switch structure, is provided. The switch structure can include a contact and a conductive element each respectively disposed on a substrate. The conductive element can be composed substantially of metallic material, and can be configured to be deformable between a first position, in which the conductive element is separated from the contact by a separation distance, and a second position, in which the conductive element contacts the contact and stores mechanical energy. The conductive element can be further configured such that, subsequent to being deformed into the second position at a temperature between about room temperature and about half of a melting temperature of the metallic material for a cumulative time of at least 107 seconds, the separation distance in the absence of external forces varies by less than 20 percent over the cumulative time. Associated methods are also provided.

Abstract: A micro-electromechanical systems (MEMS) switch or array is provided. A first substrate (e.g., carrier substrate) includes an electrically conductive substrate region. An electrical isolation layer may be disposed over a first surface of the carrier substrate. Movable actuators may be provided. At least one substrate contact is electrically coupled to at least one of the plurality of movable actuators so that a flow of electrical current is established during an electrically-closed condition of the MEMS switch array. A cover substrate may also be provided and includes an electrically conductive substrate region. The electrically conductive region of the carrier substrate is electrically coupled to the electrically conductive region of the cover substrate to define an electrically conductive path for the flow of electrical current during the electrically-closed condition of the switching array.

Abstract: Provided is a device, such as a switch structure, that includes a contact and a conductive element that is configured to be deformable between a first position in which the conductive element is separated from the contact and a second position in which the conductive element contacts the contact. The conductive element can be formed substantially of metallic material configured to inhibit time-dependent deformation. For example, the metallic material may be configured to exhibit a maximum steady-state plastic strain rate of less than 10?12 s?1 when subject to a stress of at least about 25 percent of a yield strength of the metallic material and a temperature less than or equal to about half of a melting temperature of the metallic material. The contact and the conductive element may be part of a microelectromechanical device or a nanoelectromechanical device. Associated methods are also provided.

Abstract: A micro electromechanical system switch having an electrical pathway is presented. The switch includes a first portion and a second portion. The second portion is offset to a zero overlap position with respect to the first portion when the switch is in open position (or in the closed position depending on the switch architecture). The switch further includes an actuator for moving the first portion and the second portion into contact.

Abstract: A micro-electromechanical systems (MEMS) switch or array is provided. A first substrate (e.g., carrier substrate) includes an electrically conductive substrate region. An electrical isolation layer may be disposed over a first surface of the carrier substrate. Movable actuators may be provided. At least one substrate contact is electrically coupled to at least one of the plurality of movable actuators so that a flow of electrical current is established during an electrically-closed condition of the MEMS switch array. A cover substrate may also be provided and includes an electrically conductive substrate region. The electrically conductive region of the carrier substrate is electrically coupled to the electrically conductive region of the cover substrate to define an electrically conductive path for the flow of electrical current during the electrically-closed condition of the switching array.

Abstract: A device, such as a switch structure, is provided. The switch structure can include a contact and a conductive element each respectively disposed on a substrate. The conductive element can be composed substantially of metallic material, and can be configured to be deformable between a first position, in which the conductive element is separated from the contact by a separation distance, and a second position, in which the conductive element contacts the contact and stores mechanical energy. The conductive element can be further configured such that, subsequent to being deformed into the second position at a temperature between about room temperature and about half of a melting temperature of the metallic material for a cumulative time of at least 107 seconds, the separation distance in the absence of external forces varies by less than 20 percent over the cumulative time. Associated methods are also provided.

Abstract: A device, such as a switch structure, is provided, the device including a contact and a conductive element. The conductive element can be configured to be selectively moveable between a non-contacting position, in which the conductive element is separated from the contact (in some cases by a distance less than or equal to about 4 ?m, and in others by less than or equal to about 1 ?m), and a contacting position, in which the conductive element contacts and establishes electrical communication with the contact. When the conductive element is disposed in the non-contacting position, the contact and the conductive element can be configured to support an electric field therebetween with a magnitude of greater than 320 V ?m?1 and/or a potential difference of about 330 V or more.