Abstract: Provided are a flexible display device including an electrode or wiring including an amorphous metal layer using amorphous metal, and a method of manufacturing thereof. Also, provided are a flexible display device including an electrode or wiring including an amorphous metal layer and a crystalline metal layer, and a method of manufacturing thereof.

Abstract: The present invention relates to a device and a method for measuring a magnetic field, wherein a spin current is injected into a magnetic body that has magnetic anisotropy using a spin Hall effect occurring in a current applied to a conductor, and the degree of shift of hysteresis in the magnetic body is calculated while reversing the magnetization of the magnetic body by a spin torque such that an external magnetic field applied to the magnetic body can be measured precisely.

Abstract: A stretchable multimode sensor and a method of fabricating the same are provided. The stretchable multimode sensor may include a substrate which is formed of a flexible material and includes a pressure sensor area, an optical sensor area, a temperature sensor area and a switching element area, a pressure sensor which is disposed on the pressure sensor area and includes an amorphous metal, an optical sensor which is disposed on the optical sensor area and includes an amorphous metal, and a temperature sensor which is disposed on the temperature sensor area and includes an amorphous metal, and a switching element which is disposed on the switching element area and includes an amorphous metal.

Abstract: Provided are a flexible display device including an electrode or wiring including an amorphous metal layer using amorphous metal, and a method of manufacturing thereof. Also, provided are a flexible display device including an electrode or wiring including an amorphous metal layer and a crystalline metal layer, and a method of manufacturing thereof.

Abstract: A stretchable multimode sensor and a method of fabricating the same are provided. The stretchable multimode sensor may include a substrate which is formed of a flexible material and includes a pressure sensor area, an optical sensor area, a temperature sensor area and a switching element area, a pressure sensor which is disposed on the pressure sensor area and includes an amorphous metal, an optical sensor which is disposed on the optical sensor area and includes an amorphous metal, and a temperature sensor which is disposed on the temperature sensor area and includes an amorphous metal, and a switching element which is disposed on the switching element area and includes an amorphous metal.

Abstract: The present invention relates to a device and a method for measuring a magnetic field and, more particularly, to a device and a method for measuring a magnetic field, wherein a spin current is in into a magnetic body that has magnetic anisotropy using a spin Hall effect occurring in a current applied to a conductor, and the degree of shift of hysteresis in the magnetic body is calculated while reversing the magnetization of the magnetic body by a spin torque such that an external magnetic field applied to the magnetic body can be measured precisely.

Abstract: Provided are a flexible pressure sensor using an amorphous metal and a flexible bimodal sensor for simultaneously sensing a pressure and a temperature. The sensors according to an exemplary embodiment of the present invention include a conductive layer formed of the amorphous metal to have stretchable characteristics so that it may be used for an electronic skin. Therefore, these sensors may firmly maintain conductivity and sense a pressure or simultaneously sense a pressure and a temperature even in a state in which various kinds of physical external force are present. In addition, the flexible bimodal sensor according to an exemplary embodiment of the present invention is a novel element for an electronic skin that may simultaneously sense a pressure and a temperature using the amorphous metal.

Abstract: Provided are a flexible pressure sensor using an amorphous metal and a flexible bimodal sensor for simultaneously sensing a pressure and a temperature. The sensors according to an exemplary embodiment of the present invention include a conductive layer formed of the amorphous metal to have stretchable characteristics so that it may be used for an electronic skin. Therefore, these sensors may firmly maintain conductivity and sense a pressure or simultaneously sense a pressure and a temperature even in a state in which various kinds of physical external force are present. In addition, the flexible bimodal sensor according to an exemplary embodiment of the present invention is a novel element for an electronic skin that may simultaneously sense a pressure and a temperature using the amorphous metal.

Abstract: An InSb-based switching device, which operates at room temperature by using a magnetic field controlled avalanche process for applying to magneto-logic elements, is provided. A switching device of one embodiment includes a p-type semiconductor layer; an n-type semiconductor layer; and contact layers disposed on one of the p-type and n-type semiconductor layers, the p-type semiconductor layer being in contact with the n-type semiconductor layer such that a current can be applied through the contact layers to the p-type and n-type semiconductor layers to cause a current flow from one of the contact layers to the p-type and n-type semiconductor layers and from the p-type and n-type semiconductor layers to the other of the contact layers, whereby the current flow can be controlled by an intensity of a magnetic field applied to the p-type and n-type semiconductor layers substantially perpendicularly thereto.

Abstract: A hybrid semiconductor-ferromagnet device is a device which has micromagnets (Co) deposited on semiconductor (InAs) two-dimensional electrons, and which has a junction structure of positive and negative magnetic field regions using a stray field resulting from the micromagnets. The magnetoresistance measured in the hybrid semiconductor-ferromagnet device has an asymmetrical hall resistance profile, and a change in magnetoresistance thereof is very large. The measured data is well consistent with the calculated results using a diffusive mode and a ballistic model.

Abstract: The present invention provides an InSb-based switching device operating at room temperature by using a magnetic field controlled avalanche process for applying to magneto-logic elements. A switching device of one embodiment includes a p-type semiconductor layer; an n-type semiconductor layer; and contact layers disposed on one of the p-type and n-type semiconductor layers, the p-type semiconductor layer being in contact with the n-type semiconductor layer such that a current can be applied through the contact layers to the p-type and n-type semiconductor layers to cause a current flow from one of the contact layers to the p-type and n-type semiconductor layers and from the p-type and n-type semiconductor layers to the other of the contact layers, whereby the current flow can be controlled by an intensity of a magnetic field applied to the p-type and n-type semiconductor layers substantially perpendicularly thereto.

Abstract: An LCD includes a plurality of electro-optical switches (pixels), each electro-optical switch includes a plurality of liquid crystal molecules, wherein each molecule has a first portion with a first long axis (a motional axis) and a second portion with a second long axis (a control axis). Each molecule may further include a third (shorter) axis. The first axis and the second axis cross each other and each axis is orthogonal to the other two axes. The first portion of each liquid crystal molecule has a positive dielectric anisotropy while the second portion of each liquid crystal molecule may have either a positive or negative dielectric anisotropy. The LCD may further include a first panel, a second panel that is opposite to the first panel, two field-generating electrodes that are included for each pixel in at least one of the two panels, and the plurality of liquid crystal molecules are interposed between the first panel and the second panel.

Abstract: A hybrid semiconductor-ferromagnet device is a device which has micromagnets (Co) deposited on semiconductor (InAs) two-dimensional electrons, and which has a junction structure of positive and negative magnetic field regions using a stray field resulting from the micromagnets. The magnetoresistance measured in the hybrid semiconductor-ferromagnet device has an asymmetrical hall resistance profile, and a change in magnetoresistance thereof is very large. The measured data is well consistent with the calculated results using a diffusive mode and a ballistic model.

Abstract: An LCD includes a plurality of electro-optical switches (pixels), each electro-optical switch includes a plurality of liquid crystal molecules, wherein each molecule has a first portion with a first long axis (a motional axis) and a second portion with a second long axis (a control axis). Each molecule may further include a third (shorter) axis. The first axis and the second axis cross each other and each axis is orthogonal to the other two axes. The first portion of each liquid crystal molecule has a positive dielectric anisotropy while the second portion of each liquid crystal molecule may have either a positive or negative dielectric anisotropy. The LCD may further include a first panel, a second panel that is opposite to the first panel, two field-generating electrodes that are included for each pixel in at least one of the two panels, and the plurality of liquid crystal molecules are interposed between the first panel and the second panel.