Patents by Inventor Kuniaki Ishihara
Kuniaki Ishihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240144241Abstract: An entity server includes a communication apparatus and a processor. The communication apparatus is configured to receive a temporary use request that requests temporary use of a vehicle by a user, the vehicle being associated with an NFT. When the communication apparatus receives the temporary use request, the processor performs locking processing for locking the NFT.Type: ApplicationFiled: October 25, 2023Publication date: May 2, 2024Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Tatsuya OWASHI, Kuniaki Murakami, Koji Hetsugi, Tomokazu Ishii, Naoki Ishihara
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Publication number: 20240144244Abstract: An entity server includes a communication apparatus and a processor. The communication apparatus is configured to receive a delivery request that requests delivery of a vehicle to a user, the vehicle being associated with an NFT. When the communication apparatus receives the delivery request, the processor performs locking processing for locking the NFT.Type: ApplicationFiled: October 25, 2023Publication date: May 2, 2024Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Tatsuya OWASHI, Kuniaki MURAKAMI, Koji HETSUGI, Tomokazu ISHII, Naoki ISHIHARA
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Publication number: 20230387347Abstract: The infrared LED element has a peak wavelength in a range from 1000 nm to 2000 n m inclusive and includes: an InP substrate having a semi-insulating property; a first semicon ductor layer of a conduction type that is a p-type or an n-type, being formed on top of the In P substrate; an active layer formed on top of the first semiconductor layer; a second semico nductor layer of a conduction type different from the first semiconductor layer, being forme d on top of the active layer; a first electrode formed on top of the first semiconductor layer, being in an area where the active layer is not formed; and a second electrode formed on top of the second semiconductor layer, being disposed at a place apart from the first electrode in a direction parallel to a surface of the InP substrate.Type: ApplicationFiled: July 27, 2021Publication date: November 30, 2023Applicant: Ushio Denki Kabushiki KaishaInventor: Kuniaki ISHIHARA
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Patent number: 10333270Abstract: An optical module 1 according to an embodiment includes a plurality of laser diodes (LDs) 21 to 23, a multiplexing optical system 30 combining a plurality of laser beams from the respective plurality of LDs, and a package 10 accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.Type: GrantFiled: September 26, 2017Date of Patent: June 25, 2019Assignee: Sumitomo Electric Industries, Ltd.Inventors: Takashi Kyono, Hideyuki Ijiri, Takao Nakamura, Hiromi Nakanishi, Takatoshi Ikegami, Kuniaki Ishihara, Yohei Enya, Tetsuya Kumano
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Patent number: 10199795Abstract: An optical module 1 according to an embodiment includes a plurality of laser diodes (LDs) 21 to 23, a multiplexing optical system 30 combining a plurality of laser beams from the respective plurality of LDs, and a package 10 accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.Type: GrantFiled: September 26, 2017Date of Patent: February 5, 2019Assignee: Sumitomo Electric Industries, Ltd.Inventors: Takashi Kyono, Hideyuki Ijiri, Takao Nakamura, Hiromi Nakanishi, Takatoshi Ikegami, Kuniaki Ishihara, Yohei Enya, Tetsuya Kumano
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Patent number: 9977201Abstract: An optical module includes a light-forming part and a protective member. The light-forming part includes a base member, a semiconductor light-emitting device, a lens, and a light-receiving device mounted on the base member and disposed, in the emission direction of the semiconductor light-emitting device, between the semiconductor light-emitting device and the lens. The light-receiving surface of the light-receiving device inclines toward the emission portion of the semiconductor light-emitting device such that an inclination angle ? is more than 0° and 90° or less, the inclination angle ? being an angle formed between the optical axis of the semiconductor light-emitting device and a plane including the light-receiving surface of the light-receiving device.Type: GrantFiled: July 12, 2017Date of Patent: May 22, 2018Assignee: Sumitomo Electric Industries, Ltd.Inventors: Yohei Enya, Hiromi Nakanishi, Kuniaki Ishihara
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Publication number: 20180019568Abstract: An optical module 1 according to an embodiment includes a plurality of laser diodes (LDs) 21 to 23, a multiplexing optical system 30 combining a plurality of laser beams from the respective plurality of LDs, and a package 10 accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.Type: ApplicationFiled: September 26, 2017Publication date: January 18, 2018Inventors: Takashi Kyono, Hideyuki Ijiri, Takao Nakamura, Hiromi Nakanishi, Takatoshi Ikegami, Kuniaki Ishihara, Yohei Enya, Tetsuya Kumano
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Publication number: 20180017746Abstract: An optical module includes a light-forming part and a protective member. The light-forming part includes a base member, a semiconductor light-emitting device, a lens, and a light-receiving device mounted on the base member and disposed, in the emission direction of the semiconductor light-emitting device, between the semiconductor light-emitting device and the lens. The light-receiving surface of the light-receiving device inclines toward the emission portion of the semiconductor light-emitting device such that an inclination angle ? is more than 0° and 90° or less, the inclination angle ? being an angle formed between the optical axis of the semiconductor light-emitting device and a plane including the light-receiving surface of the light-receiving device.Type: ApplicationFiled: July 12, 2017Publication date: January 18, 2018Inventors: Yohei Enya, Hiromi Nakanishi, Kuniaki Ishihara
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Patent number: 9806494Abstract: An optical module 1 according to an embodiment includes a plurality of laser diodes (LDs) 21 to 23, a multiplexing optical system 30 combining a plurality of laser beams from the respective plurality of LDs, and a package 10 accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the plurality of LDs and the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.Type: GrantFiled: November 17, 2016Date of Patent: October 31, 2017Inventors: Takashi Kyono, Hideyuki Ijiri, Takao Nakamura, Hiromi Nakanishi, Takatoshi Ikegami, Kuniaki Ishihara, Yohei Enya, Tetsuya Kumano
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Publication number: 20170141531Abstract: An optical module 1 according to an embodiment includes a plurality of laser diodes (LDs) 21 to 23, a multiplexing optical system 30 combining a plurality of laser beams from the respective plurality of LDs, and a package 10 accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the plurality of LDs and the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.Type: ApplicationFiled: November 17, 2016Publication date: May 18, 2017Inventors: Takashi Kyono, Hideyuki Ijiri, Takao Nakamura, Hiromi Nakanishi, Takatoshi Ikegami, Kuniaki Ishihara, Yohei Enya, Tetsuya Kumano
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Publication number: 20150287839Abstract: A Schottky barrier diode includes a first electrode, a group III nitride film, an insulating film having an opening, a Schottky contact metal film, a joint metal film, a conductive support substrate, and a second electrode that are arranged in order in a direction from a first main-surface side to a second main-surface side. A part of the Schottky contact metal film can extend on a part of the insulating film. The Schottky barrier diode can further include an embedded metal film disposed between the joint metal film and a recessed portion of the Schottky contact metal film. Accordingly, there are provided the Schottky barrier diode having a high breakdown voltage and allowing large current to flow therethrough, and a method of manufacturing the same.Type: ApplicationFiled: November 13, 2013Publication date: October 8, 2015Inventor: Kuniaki Ishihara
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Patent number: 8884306Abstract: A semiconductor device includes a supporting substrate, a conductive layer placed on the supporting substrate, and at least one group III nitride semiconductor layer placed on the conductive layer. Of the group III nitride semiconductor layers, a conductive-layer-neighboring group III nitride semiconductor layer has n type conductivity, dislocation density of at most 1×107 cm?2, and oxygen concentration of at most 5×1018 cm?3. Thus, an n-down type device having a semiconductor layer of high crystallinity can be provided.Type: GrantFiled: January 19, 2012Date of Patent: November 11, 2014Assignee: Sumitomo Electric Industries, Ltd.Inventors: Takashi Kyono, Kuniaki Ishihara, Akihiro Hachigo, Takahisa Yoshida, Masaki Ueno, Makoto Kiyama
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Patent number: 8633087Abstract: A method of manufacturing a GaN-based semiconductor device includes the steps of: preparing a composite substrate including: a support substrate having a thermal expansion coefficient at a ratio of not less than 0.8 and not more than 1.2 relative to a thermal expansion coefficient of GaN; and a GaN layer bonded to the support substrate, using an ion implantation separation method; growing at least one GaN-based semiconductor layer on the GaN layer of the composite substrate; and removing the support substrate of the composite substrate by dissolving the support substrate. Thus, the method of manufacturing a GaN-based semiconductor device is provided by which GaN-based semiconductor devices having excellent characteristics can be manufactured at a high yield ratio.Type: GrantFiled: March 26, 2012Date of Patent: January 21, 2014Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hideki Matsubara, Kuniaki Ishihara
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Publication number: 20130137220Abstract: A method of manufacturing a GaN-based semiconductor device includes the steps of: preparing a composite substrate including: a support substrate having a thermal expansion coefficient at a ratio of not less than 0.8 and not more than 1.2 relative to a thermal expansion coefficient of GaN; and a GaN layer bonded to the support substrate, using an ion implantation separation method; growing at least one GaN-based semiconductor layer on the GaN layer of the composite substrate; and removing the support substrate of the composite substrate by dissolving the support substrate. Thus, the method of manufacturing a GaN-based semiconductor device is provided by which GaN-based semiconductor devices having excellent characteristics can be manufactured at a high yield ratio.Type: ApplicationFiled: March 26, 2012Publication date: May 30, 2013Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Hideki Matsubara, Kuniaki Ishihara
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Publication number: 20120205661Abstract: A semiconductor device includes a supporting substrate, a conductive layer placed on the supporting substrate, and at least one group III nitride semiconductor layer placed on the conductive layer. Of the group III nitride semiconductor layers, a conductive-layer-neighboring group III nitride semiconductor layer has n type conductivity, dislocation density of at most 1×107 cm?2, and oxygen concentration of at most 5×1018 cm?3. Thus, an n-down type device having a semiconductor layer of high crystallinity can be provided.Type: ApplicationFiled: January 19, 2012Publication date: August 16, 2012Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Takashi KYONO, Kuniaki Ishihara, Akihiro Hachigo, Takahisa Yoshida, Masaki Ueno, Makoto Kiyama
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Patent number: 8222058Abstract: A method for producing a semiconductor optical device, includes the steps of: forming a semiconductor region including a semiconductor layer on a substrate; preparing a mold including a pattern surface, the pattern surface including an arrangement of patterns each including first to n-th pattern portions; forming a first mask on the semiconductor region with the mold by a nano-imprint technique; forming first to n-th periodic structures in each of the device sections in the semiconductor region by using the first mask, the first to n-th periodic structures respectively corresponding to the first to n-th pattern portions; forming a second mask after the first mask is removed, the second mask including a first pattern on an i-th periodic structure (1?i?n) among the first to n-th periodic structures in a first section of the device sections and including a second pattern on a j-th periodic structure (1?j?n) among the first to n-th periodic structures in a second section of the device sections; and forming firstType: GrantFiled: May 17, 2010Date of Patent: July 17, 2012Assignee: Sumitomo Electric Industries, Ltd.Inventor: Kuniaki Ishihara
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Patent number: 8216866Abstract: A method to manufacture an optical device with enhanced high frequency performance is disclosed. The method includes steps of: (a) forming semiconductor layers on a semiconductor substrate, (b) etching the semiconductor layers by using a mask to form a plurality of diffraction gratings, where the mask provides a plurality of periodic patterns each corresponding to respective gratings and having a specific pitch different from others, (c) forming an active layer on the etched semiconductor layers, (d) measuring a maximum optical gain of the active layer, (e) selecting one of diffraction gratings based on the measured optical gain, and (f) forming a current confinement structure aligned with the selected diffraction grating.Type: GrantFiled: October 13, 2010Date of Patent: July 10, 2012Assignee: Sumitomo Electric Industries, Ltd.Inventors: Katsumi Uesaka, Kuniaki Ishihara, Yutaka Oonishi
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Publication number: 20120094402Abstract: A method to manufacture an optical device with enhanced high frequency performance is disclosed. The method includes steps of: (a) forming semiconductor layers on a semiconductor substrate, (b) etching the semiconductor layers by using a mask to form a plurality of diffraction gratings, where the mask provides a plurality of periodic patterns each corresponding to respective gratings and having a specific pitch different from others, (c) forming an active layer on the etched semiconductor layers, (d) measuring a maximum optical gain of the active layer, (e) selecting one of diffraction gratings based on the measured optical gain, and (f) forming a current confinement structure aligned with the selected diffraction grating.Type: ApplicationFiled: October 13, 2010Publication date: April 19, 2012Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Katsumi UESAKA, Kuniaki Ishihara, Yutaka Oonishi
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Patent number: 8124543Abstract: A method for manufacturing an LD is disclosed. The LD has a striped structure including an optical active region. The striped structure is buried with resin, typically benzo-cyclo-butene (BCB). The method to form an opening in the BCB layer has tri-steps etching of the RIE. First step etches the BCB layer partially by a mixed gas of CF4 and O2, where CF4 has a first partial pressure, second step etches the photo-resist patterned on the top of the BCB layer by a mixed gas of CF4 and O2, where CF4 in this step has the second partial pressure less than the first partial pressure, and third step etches the BCB left in the first step by mixed gas of CF4 and O2, where CF4 in this step has the third partial pressure greater than the second partial pressure.Type: GrantFiled: May 24, 2010Date of Patent: February 28, 2012Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hideki Yagi, Kenji Koyama, Hiroyuki Yoshinaga, Kuniaki Ishihara
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Publication number: 20100303115Abstract: A method for manufacturing an LD is disclosed. The LD has a striped structure including an optical active region. The striped structure is buried with resin, typically benzo-cyclo-butene (BCB). The method to form an opening in the BCB layer has tri-steps etching of the RIE. First step etches the BCB layer partially by a mixed gas of CF4 and O2, where CF4 has a first partial pressure, second step etches the photo-resist patterned on the top of the BCB layer by a mixed gas of CF4 and O2, where CF4 in this step has the second partial pressure less than the first partial pressure, and third step etches the BCB left in the first step by mixed gas of CF4 and O2, where CF4 in this step has the third partial pressure greater than the second partial pressure.Type: ApplicationFiled: May 24, 2010Publication date: December 2, 2010Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Hideki Yagi, Kenji Koyama, Hiroyuki Yoshinaga, Kuniaki Ishihara