Abstract: An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.

Abstract: A light-emitting element and a display device capable of improving the light emission property are provided. Each of a plurality of anode electrodes (11) is provided for a corresponding pixel. The pixel-isolating insulation film (12) has an opening (120) exposing corresponding one of the plurality of anode electrodes (11) to outside, and has an eave (123B) in the middle of a thickness direction of an inner wall of the opening (120). An organic layer (13) includes a CGL (132) cut by the eave (123B) of the pixel-isolating insulation film (12), and covers the opening (120). A cathode electrode (14) is disposed on a surface of the organic layer (13), the surface being a surface on the opposite side of the anode electrode (11).

Abstract: An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.

Abstract: An imaging device includes a light shield that has light shielding walls and a plurality of light transmissive parts in a plurality of apertures between the light shielding walls and a light-receiving element layer in which a large number of light-receiving elements that perform photoelectric conversion corresponding to incident light inputted through the light transmissive parts of the light shield are arranged to acquire image information that has passed through optical elements that are different between the adjacent light transmissive parts. Further, the image information that passed through optical elements being different for every one of the light transmissive parts adjacent is acquired, and therefore, the sensor areas of the light receiving element is utilized effectively.

Abstract: The present disclosure relates to a solid-state image pickup device and a method for manufacturing the same, and an electronic apparatus, capable of suppressing color mixture, stray light, reduction in contour resolution, and the like.

Abstract: Provided is a laminated lens structure capable of corresponding various optical parameters. The laminated lens structure includes at least one or more sheets of first lens-attached substrates and at least one or more sheets of second lens-attached substrates as a lens-attached substrate including a lens resin portion that forms a lens, and a carrier substrate that carries the lens resin portion. The carrier substrate of the first lens-attached substrates is constituted by laminating a plurality of sheets of carrier configuration substrates in a thickness direction, and the carrier substrate of the second lens-attached substrates is constituted by one sheet of carrier configuration substrate. For example, the present technology is applicable to a camera module and the like.

Abstract: A positional shift of a lens of a stacked lens structure is reduced. A plurality of through-holes is formed at a position shifted from a first target position on a substrate according to a first shift. A lens is formed on an inner side of each of the through-holes using a first mold in which a plurality of first transfer surfaces is disposed at a position shifted from a predetermined second target position according to a second shift and a second mold in which a plurality of second transfer surfaces is disposed at a position shifted from a predetermined third target position according to a third shift. The plurality of substrates having the lenses formed therein is formed according to direct bonding, and the plurality of stacked substrates is divided. The present technique can be applied to a stacked lens structure or the like, for example.

Abstract: An electronic device has a mounted image sensor including a light shielding body having light shielding walls and light transmitting portions each formed in an opening between the light shielding walls, a first light-shielding layer formed on a light incident surface side of the light shielding body and having an opening narrower than the opening of the light shielding body for each of the openings of the light shielding body, a microlens provided for each of the openings of the first light-shielding layer on the light incident surface side of the light shielding body, and a light receiving element layer with an array of a large number of light receiving elements. The present disclosure can be used for, for example, a compound-eye optical system.

Abstract: [Object] To effectively utilize a sensor area of a light-receiving element. [Solution] An imaging device according to the present disclosure includes: a light shield that has light shielding walls and a plurality of light transmissive parts formed in a plurality of apertures between the light shielding walls; and a light-receiving element layer in which a large number of light-receiving elements that perform photoelectric conversion corresponding to incident light inputted through the light transmissive parts of the light shield are arranged to acquire image information that has passed through optical elements that are different between the adjacent light transmissive parts. According to this configuration, the image information that passed through optical elements being different for every one of the light transmissive parts adjacent is acquired, and therefore, the sensor areas of the light receiving element is utilized effectively.

Abstract: The present disclosure relates to a solid-state image pickup device and a method for manufacturing the same, and an electronic apparatus, capable of suppressing color mixture, stray light, reduction in contour resolution, and the like.

Abstract: A positional shift of a lens of a stacked lens structure is reduced. A plurality of through-holes is formed at a position shifted from a first target position on a substrate according to a first shift. A lens is formed on an inner side of each of the through-holes using a first mold in which a plurality of first transfer surfaces is disposed at a position shifted from a predetermined second target position according to a second shift and a second mold in which a plurality of second transfer surfaces is disposed at a position shifted from a predetermined third target position according to a third shift. The plurality of substrates having the lenses formed therein is formed according to direct bonding, and the plurality of stacked substrates is divided. The present technique can be applied to a stacked lens structure or the like, for example.

Abstract: The present disclosure relates to an image sensor and an electronic device that make it possible to suppress the trouble such as mixing color, stray light, and reduction of the contour resolution that can be caused in the image sensor having a structure in which the light shielding body is arranged on the light receiving element layer.

Abstract: A solid-state image pickup device includes: a plurality of light receiving portions arranged in a matrix, and a vertical transfer register which is four-phase driven by first, second, third and fourth transfer electrodes of a three-layer structure. The vertical transfer register is provided for each of columns of the light receiving portions. The first and third transfer electrodes of the first layer are alternately arranged in a charge transfer direction, and the adjacent two of the first and third transfer electrodes extend in parallel to each other between the light receiving portions. With this solid-state image pickup device, the accumulated charge capacity of each transfer region composed of the adjacent transfer electrodes for two-phases is equalized and the area of the light receiving portion is increased irrespective of variations in processed dimension between the transfer electrodes.

Abstract: A solid-state image pickup device includes: a plurality of light receiving portions arranged in a matrix, and a vertical transfer register which is four-phase driven by first, second, third and fourth transfer electrodes of a three-layer structure. The vertical transfer register is provided for each of columns of the light receiving portions. The first and third transfer electrodes of the first layer are alternately arranged in a charge transfer direction, and the adjacent two of the first and third transfer electrodes extend in parallel to each other between the light receiving portions. With this solid-state image pickup device, the accumulated charge capacity of each transfer region composed of the adjacent transfer electrodes for two-phases is equalized and the area of the light receiving portion is increased irrespective of variations in processed dimension between the transfer electrodes.

Abstract: A method of fabricating a solid-state image pickup device comprising forming mask patterns corresponding to patterns of first and third transfer electrodes, which are to be alternately arranged in each vertical transfer register formation region and which are to extend in parallel to each other between light receiving portions adjacent to each other in the vertical direction, on a first electrode material layer. The method also includes forming side walls on each of the mask patterns. The method further includes patterning the first electrode material layer via the mask patterns having the side walls, to form first and third transfer electrodes formed by the first layer.

Abstract: A method of fabricating a solid-state image pickup device comprising forming mask patterns corresponding to patterns of first and third transfer electrodes, which are to be alternately arranged in each vertical transfer register formation region and which are to extend in parallel to each other between light receiving portions adjacent to each other in the vertical direction, on a first electrode material layer. The method also includes forming side walls on each of the mask patterns. The method further includes patterning the first electrode material layer via the mask patterns having the side walls, to form first and third transfer electrodes formed by the first layer.

Abstract: A solid-state image pickup device includes: a plurality of light receiving portions arranged in a matrix, and a vertical transfer register which is four-phase driven by first, second, third and fourth transfer electrodes of a three-layer structure. The vertical transfer register is provided for each of columns of said light receiving portions. The first and third transfer electrodes of the first layer are alternately arranged in a charge transfer direction, and the adjacent two of the first and third transfer electrodes extend in parallel to each other between the light receiving portions. With this solid-state image pickup device, the accumulated charge capacity of each transfer region composed of the adjacent transfer electrodes for two-phases is equalized and the area of the light receiving portion is increased irrespective of variations in processed dimension between the transfer electrodes.