Abstract: A power semiconductor according to the present disclosed technology is a case-type power semiconductor device, in which a case is formed by mixing a heavy element material and a conductive material with a material having high processability, the conductive material is not a light metal, and the electric resistance of the case is 1.0 E5 to 1.0 E11 [?]. In addition, the power semiconductor according to the present disclosed technology is a transfer mold-type power semiconductor device, and includes a transfer mold-type sealing resin including a sealing resin containing a heavy element material and a sealing resin containing a conductive material, in which the conductive material of the sealing resin containing a conductive material is not a light metal.

Abstract: A semiconductor device includes: an inner frame that surrounds an outer circumference of a semiconductor chip; and an outer frame that surrounds an outer circumference of the inner frame; wherein the outer frame is configured with an exterior wall that surrounds the outer circumference of the inner frame, and a fibrous reinforcing member that is wound on an outer circumference of the exterior wall. This prevents the broken pieces of a component that constitutes the semiconductor device from being scattered outside the semiconductor device, thereby not only to achieve improvement in the reliability of the entire system, but also to achieve downsizing of the semiconductor device.

Abstract: Polycrystalline silicon-germanium alloy is grown on a glass substrate through a chemical vapor deposition under the conditions where the substrate temperature ranges from 350 degrees to 450 degrees in centigrade, the ratio between gas flow rate of Si.sub.2 H.sub.6 and the gas flow rate of GeF.sub.4 ranges from 20:0.9 to 40:0.9 and the dilution gas is selected from the group consisting of helium, argon, nitrogen and hydrogen, and the composition ratio of silicon of the polycrystalline silicon-germanium is equal to or greater than 80 percent so that the carrier mobility is drastically improved.