Abstract: A display apparatus (100) includes a shelf tag attachment member (102) being fixed to a front end surface of a product shelf S, and a shelf tag (101) having a display surface (103). The shelf tag (101) is attached to the shelf tag attachment member (102) via a rotation axis A, and is rotatable in a predetermined direction in which the display surface (103) is turned upward. A lower end of the shelf tag (101) is located below a lower surface LS of the product shelf S and a lower end of the shelf tag attachment member (102) in a vertical direction.

Abstract: Provided is a Ti—Nb alloy sputtering target containing 0.1 to 30 at % of Nb, the remainder of Ti and unavoidable impurities; and the Ti—Nb alloy sputtering target is characterized by having an oxygen content of 400 wtppm or less. Since the target in the present disclosure has a favorable surface texture with a low oxygen content and is readily processable due to the low hardness of the target, the Ti—Nb alloy sputtering target yields a superior effect of being able to suppress the generation of particles during sputtering.

Abstract: A Co sputtering target having a purity of 99.99% to 99.999% and a Si content of 1 wtppm or less. Provided is a Co sputtering target capable of improving barrier properties and adhesiveness by suppressing conversion into highly reactive silicide by a reduction in the Si content in cobalt.

Abstract: A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 ?m or more per 80000 mm2 on the sputtering surface.

Abstract: Provided is a master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, X2, Y1, Y2, Y2, and Y3; specifically, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the foregoing constituent elements. This consequently yields superior effects of being able to obtain a sintered sputtering target with few defects and having a high-density and uniform alloy composition, and, by using this target, to realize the deposition of an alloy barrier film with uniform quality and few particles at a high speed.

Abstract: Provided is a master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, X2, Y1, Y2, Y2, and Y3; specifically, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the foregoing constituent elements. The present invention consequently yields superior effects of being able to obtain a sintered sputtering target with few defects and having a high-density and uniform alloy composition, and, by using this target, to realize the deposition of an alloy barrier film with uniform quality and few particles at a high speed.

Abstract: A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 ?m or more per 80000 mm2 on the sputtering surface.

Abstract: A tantalum sputtering target containing niobium and tungsten as essential components in a total amount of 1 massppm or more and less than 10 massppm, and having a purity of 99.9999% or higher excluding niobium, tungsten and gas components. Provided is a high purity tantalum sputtering target comprising a uniform and fine structure which is adjusted to be within an optimal range and which enables deposition of a uniform film at a high deposition rate in a stable manner.

Abstract: A method of producing a Ni—P alloy sputtering target, wherein a Ni—P alloy having a P content of 15 to 21 wt % and remainder being Ni and unavoidable impurities is melted and atomized to prepare a Ni—P alloy atomized powder having an average grain size of 100 ?m or less, the Ni—P alloy atomized powder is mixed with a pure Ni atomized powder, and the obtained mixed powder is hot pressed. An object of the present invention is to provide a method of producing a Ni—P alloy sputtering target which achieves a small deviation from an intended composition.

Abstract: Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of niobium as an essential component, and having a purity of 99.999% or more excluding niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which yields stable plasma and superior film evenness (uniformity).

Abstract: Provided is a Ti—Nb alloy sputtering target containing 0.1 to 30 at % of Nb, the remainder of Ti and unavoidable impurities; and the Ti—Nb alloy sputtering target is characterized by having an oxygen content of 400 wtppm or less. Since the target in the present disclosure has a favorable surface texture with a low oxygen content and is readily processable due to the low hardness of the target, the Ti—Nb alloy sputtering target yields a superior effect of being able to suppress the generation of particles during sputtering.

Abstract: A sputtering target containing 0.01 to 0.5 wt % of Ag, and remainder being W and unavoidable impurities. The object of the present invention is to provide a sputtering target capable of forming a film having a relatively low specific resistance by sputtering, wherein the obtained film is endowed with good uniformity, and in particular the sputtering target has superior characteristics upon forming thin films for semiconductor devices, as well as to provide a method for producing the foregoing sputtering target.

Abstract: A Ti—Ta alloy sputtering target containing 0.1 to 30 at % of Ta, and remainder being Ti and unavoidable impurities, wherein the Ti—Ta alloy sputtering target has an oxygen content of 400 wtppm or less. The present invention has a favorable surface texture with a low oxygen content and is readily processable due to its low hardness, and therefore the present invention yields a superior effect of being able to suppress the generation of particles during sputtering.

Abstract: Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of tungsten as an essential component, and having a purity of 99.998% or more excluding tungsten and gas components. Additionally provided is a tantalum sputtering target according to according to the above further containing 0 to 100 mass ppm of molybdenum and/or niobium, excluding 0 mass ppm thereof, wherein the total content of tungsten, molybdenum, and niobium is 1 mass ppm or more and 150 mass ppm or less, and wherein the purity is 99.998% or more excluding tungsten, molybdenum, niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which enables stable plasma and yields superior film evenness (uniformity).

Abstract: A Co sputtering target having a purity of 99.99% to 99.999% and a Si content of 1 wtppm or less. Provided is a Co sputtering target capable of improving barrier properties and adhesiveness by suppressing conversion into highly reactive silicide by a reduction in the Si content in cobalt.

Abstract: Provided is a ruthenium alloy sputtering target as a ruthenium alloy sintered compact target obtained by sintering mixed powder of ruthenium powder and metal powder capable of creating oxides easier than ruthenium, wherein purity of the target excluding gas components is 99.95 wt % or higher, said target contains 5 at % to 60 at % of metal capable of creating oxides easier than ruthenium, relative density is 99% or higher, and oxygen content as impurities is 1000 ppm or less. This ruthenium alloy sputtering target is capable of reducing its oxygen content, reducing the generation of arcing and particles during sputtering, increasing the target strength by improving the sintered density, and improving the deposition quality by strictly restricting the amount of B and P impurities in the target in order to prevent the compositional variability of B and P added in minute amounts to the Si semiconductor.

Abstract: Provided is a master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, X2, Y1, Y2, Y2, and Y3; specifically, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the foregoing constituent elements. The present invention consequently yields superior effects of being able to obtain a sintered sputtering target with few defects and having a high-density and uniform alloy composition, and, by using this target, to realize the deposition of an alloy barrier film with uniform quality and few particles at a high speed.

Abstract: A sputtering target containing 0.01 to 0.5 wt % of Ag, and remainder being W and unavoidable impurities. The object of the present invention is to provide a sputtering target capable of forming a film having a relatively low specific resistance by sputtering, wherein the obtained film is endowed with good uniformity, and in particular the sputtering target has superior characteristics upon forming thin films for semiconductor devices, as well as to provide a method for producing the foregoing sputtering target.

Abstract: A method of producing a Ni—P alloy sputtering target, wherein a Ni—P alloy having a P content of 15 to 21 wt % and remainder being Ni and unavoidable impurities is melted and atomized to prepare a Ni—P alloy atomized powder having an average grain size of 100 ?m or less, the Ni—P alloy atomized powder is mixed with a pure Ni atomized powder, and the obtained mixed powder is hot pressed. An object of the present invention is to provide a method of producing a Ni—P alloy sputtering target which achieves a small deviation from an intended composition.

Abstract: The present invention provides a sputtering target configured from tungsten carbide or titanium carbide, characterized in having a purity of 4N or higher and a density of 98% or higher. Specifically, an object of the present invention is to provide a sputtering target configured from tungsten carbide or titanium carbide, wherein the purity is maintained high, and the target has a high density and a uniform and high hardness and is capable of stable high speed deposition and less generation of particles.