Patents by Inventor Kunihiro Tada
Kunihiro Tada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20060105104Abstract: The present invention is a method of introducing a gas into a processing unit, the processing unit including a processing container and a showerhead part, the processing container having a processing space for conducting a predetermined process to an object to be processed, the showerhead part having a plurality of separated diffusion rooms into each of which a source gas or a reduction gas is supplied, each of the diffusion rooms diffusing and supplying the supplied gas into the processing space. The method includes: a selecting step of selecting a combination wherein a pressure difference between a pressure of a diffusion room into which the reduction gas is supplied and a pressure of a diffusion room into which the source gas is supplied is larger, from combinations of the source gas, the reduction gas and the plurality of diffusion rooms, and a supplying step of supplying the respective gases into the respective diffusion rooms based on the combination selected at the selecting step.Type: ApplicationFiled: May 16, 2003Publication date: May 18, 2006Inventor: Kunihiro Tada
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Publication number: 20050257747Abstract: A worktable device is disposed inside a film formation process container for a semiconductor process. The worktable device includes a worktable including a top surface to place a target substrate thereon, and a side surface extending downward from the top surface, and a heater disposed in the worktable and configured to heat the substrate through the top surface. A CVD pre-coat layer covers the top surface and the side surface of the worktable. The pre-coat layer has a thickness not less than a thickness which substantially saturates the amount of radiant heat originating from heating of the heater and radiated from the top surface and the side surface of the worktable.Type: ApplicationFiled: July 29, 2005Publication date: November 24, 2005Inventors: Satoshi Wakabayashi, Shinya Okabe, Seishi Murakami, Masato Morishima, Kunihiro Tada
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Publication number: 20050233093Abstract: A film formation method to form a predetermined thin film on a target substrate includes first and second steps alternately performed each at least once. The first step is arranged to generate first plasma within a process chamber that accommodates the substrate while supplying a compound gas containing a component of the thin film and a reducing gas into the process chamber. The second step is arranged to generate second plasma within the process chamber while supplying the reducing gas into the process chamber, subsequently to the first step.Type: ApplicationFiled: June 3, 2005Publication date: October 20, 2005Inventors: Kunihiro Tada, Hiroaki Yokoi, Satoshi Wakabayashi, Kensaku Narushima
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Patent number: 6919273Abstract: A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl4 gas, a silicon hydride gas and NH3 gas are used as source gases for forming the TiSiN film by the thermal CVD process. TiCl4 gas, a silicon hydride gas, H2 gas and N2 gas are used as source gases for forming a TiSiN film by the plasma CVD process.Type: GrantFiled: December 9, 1999Date of Patent: July 19, 2005Assignee: Tokyo Electron LimitedInventors: Hayashi Otsuki, Kunihiro Tada, Kimihiro Matsuse
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Publication number: 20050136660Abstract: A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.Type: ApplicationFiled: January 5, 2005Publication date: June 23, 2005Inventors: Kunihiro Tada, Hayashi Otsuki
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Patent number: 6841203Abstract: A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.Type: GrantFiled: August 12, 2002Date of Patent: January 11, 2005Assignee: Tokyo Electron LimitedInventors: Kunihiro Tada, Hayashi Otsuki
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Publication number: 20040232467Abstract: A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl4 gas, a silicon hydride gas and NH3 gas are used as source gases for forming the TiSiN film by the thermal CVD process. TiCl4 gas, a silicon hydride gas, H2 gas and N2 gas are used as source gases for forming a TiSiN film by the plasma CVD process.Type: ApplicationFiled: June 17, 2004Publication date: November 25, 2004Inventors: Hayashi Otsuki, Kunihiro Tada, Kimihiro Matsuse
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Patent number: 6537621Abstract: A method for forming a titanium film and a titanium nitride film on a surface of a substrate by lamination, by which contamination of the substrate due to the by-product is suppressed and the contact resistance of the titanium film is reduced. The method comprises the steps of forming a titanium film on the surface of the substrate using a first process gas containing TiCl4 and a reducing gas, subjecting the substrate to a plasma process using a second process gas containing N2 gas and a reducing gas, thereby decreasing Cl in the titanium film and nitriding the surface of the titanium film to form a nitride layer, and forming a barrier metal (e.g., a titanium nitride film) on the titanium film having the nitride layer. Thus, the titanium film and the titanium nitride film are formed on the substrate by lamination. The second process gas contains N2 gas in a ratio of 0.5 or lower with respect to the reducing gas.Type: GrantFiled: December 29, 1999Date of Patent: March 25, 2003Assignee: Tokyo Electron LimitedInventors: Yasuo Kobayashi, Kunihiro Tada, Hideki Yoshikawa
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Publication number: 20030031794Abstract: A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.Type: ApplicationFiled: August 12, 2002Publication date: February 13, 2003Inventors: Kunihiro Tada, Hayashi Otsuki
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Patent number: 6451388Abstract: A Ti film is formed by chemical vapor deposition in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method comprising the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at a temperature of from 550 to 700° C. during the deposition of the Ti film, and the flow rates of the processing gases are regulated so that Si-to-insulator selectivity is not less than one. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.Type: GrantFiled: November 16, 2000Date of Patent: September 17, 2002Assignee: Tokyo Electron LimitedInventors: Kunihiro Tada, Hayashi Otsuki
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Patent number: 6197674Abstract: A method of forming a CVD-Ti film includes the steps of loading a Si wafer into a chamber, setting an interior of the chamber at a predetermined reduced-pressure atmosphere, introducing TiCl4 gas, H2 gas, and Ar gas into the chamber, and generating a plasma of the introduced gas in the chamber to form a Ti film in a hole formed in an SiO2 film on the wafer. A wafer temperature is set to 400° to 800°, a supplied power is set to 100 W to 300 W, an internal chamber pressure is set to 0.5 Torr to 3.0 Torr, a flow rate ratio of TiCl4 gas to a sum of H2 gas and Ar gas is 1:100 to 1:300, and a flow rate ratio of H2 gas to Ar gas is 1:1 to 2:1.Type: GrantFiled: July 9, 1998Date of Patent: March 6, 2001Assignee: Tokyo Electron LimitedInventors: Hideki Yoshikawa, Yasuo Kobayashi, Kunihiro Tada
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Patent number: 6177149Abstract: A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method comprising the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 550° C. or above during the deposition of the Ti film, and the flow rates of the processing gases are regulated so that Si-to-insulator selectivity is not less than one. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.Type: GrantFiled: December 21, 1998Date of Patent: January 23, 2001Assignee: Tokyo Electron LimitedInventors: Kunihiro Tada, Hayashi Otsuki
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Patent number: 6069093Abstract: In a process of forming a metal film, when metal wiring is formed on a diffusion layer (an electrode, etc.) of a circuit element formed on a silicon semiconductor wafer, a Ti film is deposited on a surface of a processed body by PECVD using TiCl.sub.4 gas and H.sub.2 gas as material gas. A Ti--Si--N film is formed on the diffusion layer surface by adding N.sub.2 gas to the material gas, and the Ti film is formed subsequently on the Ti--Si--N film. The Ti--Si--N film suppresses diffusion of silicon from the semiconductor wafer side.Type: GrantFiled: June 18, 1998Date of Patent: May 30, 2000Assignee: Tokyo Electron LimitedInventors: Kunihiro Tada, Satoshi Wakabayashi
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Patent number: 6051281Abstract: A method of forming a titanium film and a titanium nitride film on a substrate by lamination which method is capable of suppressing contamination of the substrate due to the by-product and of reducing a contact resistance value of the titanium film. By carrying out the step of forming a titanium film on a surface of a substrate, the step of subjecting the substrate to the plasma processing in an atmosphere of the mixed gas of nitrogen gas and hydrogen gas, thereby nitriding a surface layer of the titanium film to form thereon a nitride layer, and the step of forming a barrier film (e.g., a titanium nitride film) on the titanium film having the nitride layer formed thereon, both the titanium film and the titanium nitride film are formed on the substrate by lamination.Type: GrantFiled: September 30, 1997Date of Patent: April 18, 2000Assignee: Tokyo Electron LimitedInventors: Yasuo Kobayashi, Kunihiro Tada, Hideki Yoshikawa
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Patent number: 6004872Abstract: A method of manufacturing a semiconductor device, comprises the steps of, preparing a silicon substrate having a source region, a drain region, a gate electrode and an SiO.sub.2 film formed on one surface, depositing titanium on the one surface of the silicon substrate by CVD using a high frequency plasma of a low density to form a TiSi.sub.2 layer having a C54 crystal phase, so that the TiSi.sub.2 layer covers the source and drain regions and gate electrode, and a Ti layer covers the SiO.sub.2 film. The Ti layer formed on the SiO.sub.2 film is removed by a selective etching.Type: GrantFiled: October 29, 1997Date of Patent: December 21, 1999Assignee: Tokyo Electron LimitedInventors: Yoshihiro Tezuka, Kunihiro Tada
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Patent number: 5942282Abstract: A first pre-coating film forming gas containing titanium is supplied into a process chamber in which a susceptor for supporting a wafer is located, at the same time heating the susceptor to thereby form, on the susceptor, a first pre-coating film containing titanium as a main component, and then a second pre-coating film forming gas containing titanium and nitrogen is supplied into the process chamber to thereby form, on the pre-coating first film, a second pre-coating film containing titanium nitride as a main component. The wafer is mounted on a part of the second pre-coating film susceptor. A first film forming gas containing titanium is supplied into the process chamber, at the same time heating the susceptor to thereby form, on the wafer, a first film containing titanium as a main component, and then a second film forming gas containing titanium and nitrogen is supplied into the process chamber to thereby form, on the first film on the wafer, a second film containing titanium nitride as a main component.Type: GrantFiled: May 4, 1998Date of Patent: August 24, 1999Assignee: Tokyo Electron LimitedInventors: Kunihiro Tada, Yoshihiro Tezuka, Kazuichi Hayashi
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Patent number: 5709757Abstract: A film forming apparatus having a dry cleaning function comprises a process chamber for containing an object to be processed, a process gas supply system for introducing into the process chamber a process gas for forming one of a metal film or a metal compound film on the object, a heating device for depositing a component of the process gas on the object, thereby forming a film, a cleaning gas supply system for introducing into the process chamber a cleaning gas containing nitrogen trichloride or a fluoride such as chlorine trifluoride or nitrogen trifluoride for cleaning one of a metal or a metal compound adhering to an inner part of the process chamber due to the film formation, and an after-treatment gas supply system for introducing into the process chamber a cleaning after-treatment gas containing an alcohol.Type: GrantFiled: August 24, 1995Date of Patent: January 20, 1998Assignee: Tokyo Electron LimitedInventors: Tatsuo Hatano, Seishi Murakami, Kunihiro Tada