Patents by Inventor Kunio Kishida

Kunio Kishida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5282946
    Abstract: A sputtering target of platinum-cobalt alloy is disclosed which contains 10 to 55% by weight of platinum; 1 to 15% by weight of a first additional element selected from the group consisting of nickel and tantalum; no more than 1.5% by weight of a second additional element selected from the group consisting of boron, titanium, lanthanum, cerium, neodymium, beryllium, calcium, zirconium, and silicon; no more than 20% by weight of chromium; and balance cobalt. A method for manufacturing the sputtering target is also disclosed. In the method, a platinum-cobalt alloy containing specific ingredients in predetermined amounts is first prepared. Then, the platinum-cobalt alloy is subjected to hot plastic working with a thickness reduction of no less than 30%. Subsequently, the alloy thus hot worked is subjected to a cold plastic working with a thickness reduction of no less than 5% at a temperature less than the recrystallization temperature of the alloy.
    Type: Grant
    Filed: June 25, 1992
    Date of Patent: February 1, 1994
    Assignee: Mitsubishi Materials Corporation
    Inventors: Makoto Kinoshita, Jun Tamura, Masaki Morikawa, Kunio Kishida, Toshinori Ishii, Akifumi Mishima
  • Patent number: 4632806
    Abstract: A Cu alloy having high resistance to oxidation for use in leads on semiconductor devices is disclosed. The alloy consists essentially of 7-15 wt % Mn, 10-30 wt % Zn, 0.2-10 wt % Ni, 0.1-3 wt % Al, with the balance being Cu and incidental impurities. Also disclosed is a Cu alloy clad material wherein the substrate is made of Cu or Cu alloy having high electrical conductivity and good heat dissipation, and the cladding or partial cladding is composed of the Cu alloy having the composition specified above.
    Type: Grant
    Filed: December 17, 1984
    Date of Patent: December 30, 1986
    Assignees: Mitsubishi Kinzoku Kabushiki Kaisha, Fujitsu Limited
    Inventors: Masaki Morikawa, Hideaki Yoshida, Kunio Kishida
  • Patent number: 4525434
    Abstract: A Cu alloy having high resistance to oxidation for use in leads on semiconductor devices is disclosed. The alloy consists essentially of 7-15 wt % Mn, 10-30 wt % Zn, 0.2-10 wt % Ni, 0.1-3 wt % Al, with the balance being Cu and incidental impurities. Also disclosed in a Cu alloy clad material wherein the substrate is made of Cu or Cu alloy having high electrical conductivity and good heat dissipation, and the cladding or partial cladding is composed of the Cu alloy having the composition specified above.
    Type: Grant
    Filed: September 6, 1983
    Date of Patent: June 25, 1985
    Assignees: Mitsubishi Kinzoku Kabushiki Kaisha, Fujitsu Limited
    Inventors: Masaki Morikawa, Hideaki Yoshida, Kunio Kishida
  • Patent number: 4416853
    Abstract: A Cu-Ag alloy brazing filler material with low Ag content that exhibits excellent brazability and has a low vapor pressure is disclosed. The filler material comprises 5 to 35% by weight of Ag, 2.5 to 13% by weight of Si, with the balance being Cu and incidental impurities. The properties of the filler material can be improved further by addition of at least one element selected from the group consisting of Sn, In, Fe, Ni, Co, B and Li.
    Type: Grant
    Filed: April 16, 1982
    Date of Patent: November 22, 1983
    Assignee: Mitsubishi Kinzoku Kabushiki Kaisha
    Inventors: Masaki Morikawa, Hideaki Yoshida, Kunio Kishida, Chuji Tanaka
  • Patent number: 4411864
    Abstract: A Cu-Ag alloy brazing material that exhibits excellent cold workability, brazability and has a low vapor pressure is disclosed. The filler material comprises more than 35 to 50% by weight of Ag, 2.2 to 6% by weight of Si, with the balance being Cu and incidental impurities. The properties of the filler material can be improved further by addition of at least one element selected from the group consisting of Sn, In, Fe, Ni, Co, B and Li.
    Type: Grant
    Filed: July 30, 1982
    Date of Patent: October 25, 1983
    Assignee: Mitsubishi Kinzoku Kabushiki Kaisha
    Inventors: Masaki Morikawa, Hideaki Yoshida, Kunio Kishida, Chuji Tanaka