Abstract: This magnesium oxide powder contains secondary particles in which a plurality of primary particles of magnesium oxide having a crystal phase and a grain boundary phase are at least partially fused together by the grain boundary phase, and a median diameter obtained by a laser diffraction scattering method is 300 ?m or less.

Abstract: This magnesium oxide powder contains secondary particles in which a plurality of primary particles of magnesium oxide having a crystal phase and a grain boundary phase are at least partially fused together by the grain boundary phase, and a median diameter obtained by a laser diffraction scattering method is 300 µm or less.

Abstract: An interior member for attachment to a car body configuring member includes a fixing tool to fix the interior member to the car body configuring member, a base portion with a through-hole which allows the fixing tool to pass therethrough, and a movement restricting portion that protrudes from an outer surface of the base portion. The fixing tool has a head disposed on the outer surface, and a shaft extending from the head and fixed to the car body configuring member through the through-hole. The interior member is displaceable in a direction along the outer surface of the base portion within a predetermined area in a state where part of the car body configuring member or the fixing tool is inserted. The movement restricting portion has an abutting portion which restricts movement of the head in the direction along the outer surface.

Abstract: An interior member for attachment to a car body configuring member includes a fixing tool to fix the interior member to the car body configuring member, a base portion with a through-hole which allows the fixing tool to pass therethrough, and a movement restricting portion that protrudes from an outer surface of the base portion. The fixing tool has a head disposed on the outer surface, and a shaft extending from the head and fixed to the car body configuring member through the through-hole. The interior member is displaceable in a direction along the outer surface of the base portion within a predetermined area in a state where part of the car body configuring member or the fixing tool is inserted. The movement restricting portion has an abutting portion which restricts movement of the head in the direction along the outer surface.

Abstract: The manufacturing method of a semiconductor device can improve the mechanical strength of a pad more than before, and suppress the occurrence of a crack. The manufacturing method of a semiconductor device includes: forming a first pad constituted by a first metal layer; forming an insulating layer on the first pad; providing an opening portion in the insulating layer by removing the insulating layer on at least a partial region of the first pad; forming a second pad constituted by a second metal layer in the opening portion of the insulating layer so as to have a film thickness that is smaller than the film thickness of the insulating layer; and forming a third pad constituted by a third metal layer on the second pad.

Abstract: A semiconductor device includes: a memory transistor including a first silicon oxide film, a first silicon nitride film, a second silicon oxide film, and a first gate electrode that are disposed in sequence on a substrate; and a MOS transistor including a third silicon oxide film and a second gate electrode that are disposed in sequence on the substrate. The memory transistor has a side wall including an extending portion of the first silicon oxide film, a second silicon nitride film that is in contact with the first silicon nitride film, and a fourth silicon oxide film that are disposed in sequence on the substrate, and the MOS transistor has a side wall including a fifth silicon oxide film that is disposed on the substrate.

Abstract: A semiconductor device includes: a memory transistor including a first silicon oxide film, a first silicon nitride film, a second silicon oxide film, and a first gate electrode that are disposed in sequence on a substrate; and a MOS transistor including a third silicon oxide film and a second gate electrode that are disposed in sequence on the substrate. The memory transistor has a side wall including an extending portion of the first silicon oxide film, a second silicon nitride film that is in contact with the first silicon nitride film, and a fourth silicon oxide film that are disposed in sequence on the substrate, and the MOS transistor has a side wall including a fifth silicon oxide film that is disposed on the substrate.

Abstract: The manufacturing method of a semiconductor device can improve the mechanical strength of a pad more than before, and suppress the occurrence of a crack. The manufacturing method of a semiconductor device includes: forming a first pad constituted by a first metal layer; forming an insulating layer on the first pad; providing an opening portion in the insulating layer by removing the insulating layer on at least a partial region of the first pad; forming a second pad constituted by a second metal layer in the opening portion of the insulating layer so as to have a film thickness that is smaller than the film thickness of the insulating layer; and forming a third pad constituted by a third metal layer on the second pad.

Abstract: A glass sheet has one surface and the other surface facing the one surface in a thickness direction, wherein a fluorine concentration (average fluorine concentration by SIMS at a depth of 1 to 24 ?m) in the one surface is higher than that in the other surface. The following expression is satisfied: 0.07??F/?H2O. ?F (mol %) is a value obtained by subtracting an average fluorine concentration in the surface having the lower fluorine concentration from that in the surface having the higher fluorine concentration, and ?H2O (mol %) is an absolute value of a value obtained by subtracting an average H2O concentration in the surface having the higher fluorine concentration from that in the surface having the lower fluorine concentration.

Abstract: To provide a method for purifying R-1234yf, whereby it is possible to efficiently remove even impurities such as R-1243zf, etc. which are difficult to separate by distillation purification, from a mixture containing R-1234yf as the main component and various impurities, such as a gas formed by reacting R-1214ya with hydrogen. The method for purifying R-1234yf comprises a step of bringing a mixture which contains R-1234yf as the main component and also contains hydrohaloalkene impurities other than R-1234yf and hydrohaloalkane impurities, into contact with a solvent that has an extraction/removal index (r), as represented by the formula r=[4×(?D?17.2)2+(?P?8.3)2+(?H?2.6)2]1/2, of at most 6.5, so as to remove at least a part of the hydrohaloalkene impurities and hydrohaloalkane impurities.

Abstract: A computer-readable recording medium storing an information display program for causing a computer to execute a process, the process includes: identifying a first component related to a first character string extracted, referring to a first storage unit that stores a plurality of components constituting the article and character strings that individually represent the plurality of components; obtaining first location information related to the first component from a second storage unit that stores pieces of location information corresponding to the plurality of components in the article; determining an eye direction when a shape of the article is displayed; determining second location information of the first component in the shape of the article related to the eye direction, based on the first location information and the eye direction; and displaying the first character string based on the second location information.

Abstract: A glass sheet has one surface and the other surface facing the one surface in a thickness direction, wherein a fluorine concentration (average fluorine concentration by SIMS at a depth of 1 to 24 ?m) in the one surface is higher than that in the other surface. The following expression is satisfied: 0.07??F/?H2O. ?F (mol %) is a value obtained by subtracting an average fluorine concentration in the surface having the lower fluorine concentration from that in the surface having the higher fluorine concentration, and ?H2O (mol %) is an absolute value of a value obtained by subtracting an average H2O concentration in the surface having the higher fluorine concentration from that in the surface having the lower fluorine concentration.

Abstract: A glass sheet includes 4 mol % or more of Al2O3. In the glass sheet, a surface Na2O amount in one surface of the glass sheet is lower than the surface Na2O amount in the other surface of the glass sheet by 0.2 mass % to 1.2 mass %.

Abstract: A fluorinated elastic copolymer which has iodine atoms, bromine atoms, or both iodine and bromine atoms, at its molecular terminals and which includes repeating units (a) based on tetrafluoroethylene, repeating units (b) based on a fluorinated monomer having one polymerizable unsaturated bond (provided that tetrafluoroethylene is excluded), and repeating units (c) based on a fluorinated monomer having at least two polymerizable unsaturated bonds, wherein the ratio (molar ratio) of the repeating units (a) to the repeating units (b) is (a)/(b)=40/60 to 90/10, and the proportion of the repeating units (c) based on the total amount of the repeating units (a) and the repeating units (b) is from 0.01 to 1 mol %.

Abstract: In the production of 2,3,3,3-tetrafluoropropene (HFO-1234yf), formation of HFC-254eb as an excessively reduced product is suppressed. A process for producing 2,3,3,3-tetrafluoropropene, which comprises reacting a raw material compound gas composed of at least one of 1,1-dichloro-2,3,3,3-tetrafluoropropene and 1-chloro-2,3,3,3-tetrafluoropropene, and hydrogen gas, in the presence of a catalyst, wherein the catalyst is a catalyst having palladium supported on active carbon, and the ratio of the number of moles of the hydrogen gas to the number of moles of chlorine atoms in the raw material compound gas (H2/Cl) is at most 0.7.

Abstract: The present invention relates to an optical member including a TiO2-containing silica glass having: a TiO2 concentration of from 3 to 10% by mass; a Ti3+ concentration of 100 wt ppm or less; a thermal expansion coefficient at from 0 to 100° C., CTE0-100, of 0±150 ppb/° C.; and an internal transmittance in the wavelength range of 400 to 700 nm per a thickness of 1 mm, T400-700, of 80% or more, in which the optical member has a ratio of variation of Ti3+ concentration to an average value of the Ti3+ concentration, ?Ti3+/Ti3+, on an optical use surface, is 0.2 or less.

Abstract: To provide a novel fluorination treatment method whereby the surface of oxide glass can be treated for fluorination at low cost and with excellent adhesiveness. A method for treating the surface of oxide glass, which comprises contacting the surface of oxide glass with a gas of a fluorinating agent or a mixed gas having a fluorinating agent diluted with an inert gas, wherein the fluorinating agent is an elemental fluorine, or a fluorine compound capable of cleaving a bond between an oxygen atom and a metal atom in the framework of the oxide glass and forming a bond between a fluorine atom and the metal atom; and the concentration of hydrogen fluoride at the surface of oxide glass with which the fluorinating agent is in contact, is controlled to be at most 1 mol %.

Abstract: To provide a method for purifying R-1234yf, whereby it is possible to efficiently remove even impurities such as R-1243zf, etc. which are difficult to separate by distillation purification, from a mixture containing R-1234yf as the main component and various impurities, such as a gas formed by reacting R-1214ya with hydrogen. The method for purifying R-1234yf comprises a step of bringing a mixture which contains R-1234yf as the main component and also contains hydrohaloalkene impurities other than R-1234yf and hydrohaloalkane impurities, into contact with a solvent that has an extraction/removal index (r), as represented by the formula r=[4×(?D?17.2)2+(?P?8.3)2+(?H?2.6)2]1/2, of at most 6.5, so as to remove at least a part of the hydrohaloalkene impurities and hydrohaloalkane impurities.

Abstract: The object is to provide a process for producing highly pure 2,3,3,3-tetrafluoropropene, whereby formation of 3,3,3-trifluoropropene is suppressed. A process for producing 2,3,3,3-tetrafluoropropene, which comprises reacting a raw material compound composed of 1,1-dichloro-2,3,3,3-tetrafluoropropene and/or 1-chloro-2,3,3,3-tetrafluoropropene, and hydrogen in a gas phase in a reactor having a catalyst layer packed with a catalyst-supporting carrier, while maintaining the maximum temperature of the catalyst layer to be at most 130° C., to obtain formed gas containing 2,3,3,3-tetrafluoropropene, and then, contacting the formed gas discharged from the reactor, with alkali at a temperature of at most 100° C.

Abstract: The object is to provide a process whereby it is possible to produce 2,3,3,3-tetrafluoropropene at a high conversion ratio constantly for a long period of time. A process for producing 2,3,3,3-tetrafluoropropene, which comprises reacting a raw material compound of at least one of 1,1-dichloro-2,3,3,3-tetrafluoropropene and 1-chloro-2,3,3,3-tetrafluoropropene, and hydrogen, in the presence of a noble metal catalyst supported on active carbon having an ash content of at most 3% as measured in accordance with ASTM D2866.