Abstract: A light emitting diode (LED) package may include a package body provided with a pair of lead frames, and an LED chip mounted on the package body and electrically connected to the lead frames through wire bonding. Each lead frame may include a first reflective layer disposed on a mounting surface on which the LED chip is disposed and a second reflective layer disposed on the first reflective layer. A wire may penetrate through the second reflective layer to be connected to the first reflective layer. Accordingly, the LED package may provide the uniform amount of light by suppressing discoloration of the lead frames, and the manufacturing time of the LED package may be reduced, leading to a reduction in manufacturing costs.

Abstract: A light emitting diode (LED) package may include a package body provided with a pair of lead frames, and an LED chip mounted on the package body and electrically connected to the lead frames through wire bonding. Each lead frame may include a first reflective layer disposed on a mounting surface on which the LED chip is disposed and a second reflective layer disposed on the first reflective layer. A wire may penetrate through the second reflective layer to be connected to the first reflective layer. Accordingly, the LED package may provide the uniform amount of light by suppressing discoloration of the lead frames, and the manufacturing time of the LED package may be reduced, leading to a reduction in manufacturing costs.

Abstract: A white light emitting device includes: a blue light emitting diode (LED) which emits blue light; and a resin packing unit which encapsulates the blue LED, wherein the resin packing unit includes a first wavelength conversion material which, in response to being excited by the blue light, emits green light, a second wavelength conversion material which, in response to being excited by the blue light, emits red light, and a complex compound which absorbs light of a region in which the green light and the red light are mixed, the light of the region being included in white light implemented through a mixture of the green light and the red light excited together with the blue light.

Abstract: A white light emitting device includes: a blue light emitting diode (LED) which emits blue light; and a resin packing unit which encapsulates the blue LED, wherein the resin packing unit includes a first wavelength conversion material which, in response to being excited by the blue light, emits green light, a second wavelength conversion material which, in response to being excited by the blue light, emits red light, and a complex compound which absorbs light of a region in which the green light and the red light are mixed, the light of the region being included in white light implemented through a mixture of the green light and the red light excited together with the blue light.

Abstract: A white light emitting device includes: a blue light emitting diode (LED) which emits blue light; and a resin packing unit which encapsulates the blue LED, wherein the resin packing unit includes a first wavelength conversion material which, in response to being excited by the blue light, emits green light, a second wavelength conversion material which, in response to being excited by the blue light, emits red light, and a complex compound which absorbs light of a region in which the green light and the red light are mixed, the light of the region being included in white light implemented through a mixture of the green light and the red light excited together with the blue light.

Abstract: The present invention relates to a GaN type LED device and a method of manufacturing the same. More particularly, there are provided a GaN type LED device including an LED chip; and a submount eutectic-bonded with the LED chip through an adhesive layer, wherein the adhesive layer is configured by soldering a plurality of metallic layers in which a first metallic layer and a second metallic layer are sequentially stacked, and the second metallic layer is formed in a paste form. Further, the present invention provides a method of manufacturing the GaN type LED device.

Abstract: An LED light source module is provided. The LED light source module includes a circuit board having a first circuit pattern and a second circuit pattern; and a plurality of rectangular LED packages mounted on the circuit board so as to be connected to each of the first and second circuit patterns, and arranged in a row such that each of the LED packages is tilted in a predetermined direction, while long sides of adjacent LED packages facing each other. In addition, a display device having the LED light source module is provided.

Abstract: A white light emitting device includes: a blue light emitting diode (LED) which emits blue light; and a resin packing unit which encapsulates the blue LED, wherein the resin packing unit includes a first wavelength conversion material which, in response to being excited by the blue light, emits green light, a second wavelength conversion material which, in response to being excited by the blue light, emits red light, and a complex compound which absorbs light of a region in which the green light and the red light are mixed, the light of the region being included in white light implemented through a mixture of the green light and the red light excited together with the blue light.

Abstract: A white light emitting device includes a blue light emitting diode (LED) emitting blue light, a yellow phosphor excited by the blue light to emit yellow light, and selected from the group consisting of Y3Al5O12 and Lu3Al5O12, and a red phosphor and a green phosphor excited by the blue light to emit red light and green light, wherein white light obtained from a mixture of the blue light and excited light corresponds to a region defined by coordinate points of (0.28, 0.28), (0.24, 0.20), (0.26, 0.19), and (0.30, 0.27) in a CIE 1931 color coordinate system.

Abstract: The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

Abstract: An LED light source module is provided. The LED light source module includes a circuit board having a first circuit pattern and a second circuit pattern; and a plurality of rectangular LED packages mounted on the circuit board so as to be connected to each of the first and second circuit patterns, and arranged in a row such that each of the LED packages is tilted in a predetermined direction, while long sides of adjacent LED packages facing each other. In addition, a display device having the LED light source module is provided.

Abstract: Provided is an LED package including a printed circuit board (PCB); a conductive structure that is formed on the PCB and is composed of any one selected from a silicon structure and an aluminum structure; and an LED chip that is mounted on the PCB and is electrically connected to the PCB through the conductive structure.

Abstract: A nitride based semiconductor LED is provided. In the nitride based semiconductor LED, an n-type nitride semiconductor layer is formed on a substrate. The n-type nitride semiconductor layer has the top surface divided into a first region and a second region with a finger structure, so that the first region and the second region are meshed with each other. An active layer is formed on the second region of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer is formed on the active layer, and a reflective electrode is formed on the p-type nitride semiconductor layer. A p-electrode is formed on the reflective electrode, and an n-electrode is formed on the first region of the n-type nitride semiconductor layer. A plurality of n-type electrode pads are formed on the n-electrode. At least one of the n-type electrode pads are arranged adjacent to different sides of the n-electrode.

Abstract: Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in

Abstract: There is provided an LED module, including a bar type circuit substrate formed with at least one groove so as to have a reflecting cup; a plurality of LED chips disposed in the groove of the circuit substrate and linearly arranged in a longitudinal direction of the circuit substrate; and a phosphor film spaced apart from the LED chips and disposed on the circuit substrate to cover the entire groove.

Abstract: The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

Abstract: The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

Abstract: The invention relates to a high-quality semiconductor light emitting device which suppresses current concentration. The semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially formed on a substrate. The semiconductor light emitting device further includes a p-electrode formed on the p-type semiconductor layer and an n-electrode formed on a surface of a mesa-etched portion of the n-type semiconductor layer. A trench is formed in the n-type semiconductor layer to prevent current concentration. The trench is extended from an upper surface of the mesa-etched portion of the n-type semiconductor layer or from a bottom surface of the substrate into the n-type semiconductor layer at a predetermined depth.

Abstract: There is provided a high power LED package and a method of manufacturing the same. The method includes: forming at least one chip mounting part and at least one through hole in a metal plate; forming an insulating layer of a predetermined thickness on an entire outer surface of the metal plate; forming an electrode part to be electrically connected to a light emitting chip mounted on the chip mounting part; and cutting the metal plate along a trimming line to separate the package. The LED package is free from thermal impact resulting from different thermal coefficients among components, thus ensuring stable heat radiation characteristics in a high temperature atmosphere. Also, the LED package is minimized in optical loss to improve optical characteristics. In addition, the LED package is simplified in a manufacturing and assembly process and thus can be manufactured in mass production at a lower cost.

Abstract: A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-type electrode pad formed on the transparent electrode; a pair of p-type connection electrodes formed in a line extending from the p-type electrode pad so as to have an inclination angle of less than 90 degrees with respect to one side of the transparent electrode adjacent to the p-type electrode pad; a pair of p-electrodes extending from both ends of the p-type connection electrodes in the direction of the n-type electrode pad, the p-electrode being formed in parallel to one side of the adjacent transparent electrode; and an n-type electrode pad formed on the n-type nitride semiconductor layer, on which the active layer is not formed, such that the n-type elec