Abstract: A method of forming a ferroelectric random access memory (FeRAM) device includes: forming a layer stack over a substrate, where the layer stack includes alternating layers of a first dielectric material and a word line (WL) material; forming first trenches extending vertically through the layer stack; filling the first trenches, where filling the first trenches includes forming, in the first trenches, a ferroelectric material, a channel material over the ferroelectric material, and a second dielectric material over the channel material; after filling the first trenches, forming second trenches extending vertically through the layer stack, the second trenches being interleaved with the first trenches; and filling the second trenches, where filling the second trenches includes forming, in the second trenches, the ferroelectric material, the channel material over the ferroelectric material, and the second dielectric material over the channel material.

Abstract: A method of forming a three-dimensional (3D) memory device includes: forming, over a substrate, a layer stack having alternating layers of a first conductive material and a first dielectric material; forming trenches extending vertically through the layer stack from an upper surface of the layer stack distal from the substrate to a lower surface of the layer stack facing the substrate; lining sidewalls and bottoms of the trenches with a memory film; forming a channel material over the memory film, the channel material including an amorphous material; filling the trenches with a second dielectric material after forming the channel material; forming memory cell isolation regions in the second dielectric material; forming source lines (SLs) and bit lines (BLs) that extend vertically in the second dielectric material on opposing sides of the memory cell isolation regions; and crystallizing first portions of the channel material after forming the SLs and BLs.

Abstract: A transistor includes an insulating layer, a source region, a drain region, a channel layer, a ferroelectric layer, and a gate electrode. The source region and the drain region are respectively disposed on and in physical contact with two opposite sidewalls of the insulating layer. A thickness of the source region, a thickness of the drain region, and a thickness of the insulating layer are substantially the same. The channel layer is disposed on the insulating layer, the source region, and the drain region. The ferroelectric layer is disposed over the channel layer. The gate electrode is disposed on the ferroelectric layer.

Abstract: A new database table obtained by transferring records from a conventional database table. Each database table has a pluralilty of rows and columns, and each record includes a plurality of data items. Each data item in the conventional table is transferred to a first column of the new database, and a second column of the new table identifies the columns of the conventional table from which the data items in the first column of the new table were taken. A third column of the new table identifies the records of the conventional table from which the data items in the first column of the new tables were taken. A method and system are also disclosed for searching the new database table for a given record.

Abstract: A knowledge system including an expert system and a complementary data base. The knowledge system is provided to answer requests, and each request has a record including a plurality of parameters and values for those parameters. The expert system is provided to process the record of a specific request to answer that request, and the complementary database stores a plurality of records of requests having known answers, and any request from a user is preprocessed by searching the complementary database for a record identical to the record of the request. If an identical record is found, the known answer to the request having that identical record is given to the user to answer his or her request; however if no identical record is found in the complementary database, the expert system is invoked to answer the request.

Abstract: The present invention is directed to a relational data base system which is operating in a virtual machine environment. The invention provides a system that includes a disconnected virtual machine which is running in the same virtual machine environment as is the relational data base. Insert and Update requests to the system are generated by programs running in user controlled virtual machines. Other users issue select and view requests which lock out insert and update requests which relate to the same data domain. With the present invention Insert and Update requests go to the disconnected virtual machine which ques them and applies them against the relational data base in the order that the requests are received. In this way, while a select is being executed on data in a particular domain of the data base, update and insert request for the same domain will be held by the virtual machine and the operator will not be "locked out" of the system.