Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a stack of semiconductor layers spaced apart from and aligned with each other, a first source/drain epitaxial feature in contact with a first one or more semiconductor layers of the stack of semiconductor layers, and a second source/drain epitaxial feature disposed over the first source/drain epitaxial feature. The second source/drain epitaxial feature is in contact with a second one or more semiconductor layers of the stack of semiconductor layers. The structure further includes a first dielectric material disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature and a first liner disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature. The first liner is in contact with the first source/drain epitaxial feature and the first dielectric material.

Abstract: Embodiments disclosed herein relate to using an implantation process and a melting anneal process performed on a nanosecond scale to achieve a high surface concentration (surface pile up) dopant profile and a retrograde dopant profile simultaneously. In an embodiment, a method includes forming a source/drain structure in an active area on a substrate, the source/drain structure including a first region comprising germanium, implanting a first dopant into the first region of the source/drain structure to form an amorphous region in at least the first region of the source/drain structure, implanting a second dopant into the amorphous region containing the first dopant, and heating the source/drain structure to liquidize and convert at least the amorphous region into a crystalline region, the crystalline region containing the first dopant and the second dopant.

Abstract: A method of fabricating a device includes forming a dummy gate over a plurality of fins. Thereafter, a first portion of the dummy gate is removed to form a first trench that exposes a first hybrid fin and a first part of a second hybrid fin. The method further includes filling the first trench with a dielectric material disposed over the first hybrid fin and over the first part of the second hybrid fin. Thereafter, a second portion of the dummy gate is removed to form a second trench and the second trench is filled with a metal layer. The method further includes etching-back the metal layer, where a first plane defined by a first top surface of the metal layer is disposed beneath a second plane defined by a second top surface of a second part of the second hybrid fin after the etching-back the metal layer.

Abstract: Examples of an integrated circuit with FinFET devices and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate, a fin extending from the substrate, a gate disposed on a first side of the fin, and a gate spacer disposed alongside the gate. The gate spacer has a first portion extending along the gate that has a first width and a second portion extending above the first gate that has a second width that is greater than the first width. In some such examples, the second portion of the gate spacer includes a gate spacer layer disposed on the gate.

Abstract: An axial flux motor includes a rotor assembly and a stator assembly. The rotor assembly has magnets. The stator assembly has a circuit substrate, segmented iron cores, and a coil. The circuit substrate extends radially. The segmented iron cores are supported on the circuit substrate to be opposite to the magnet in the axial direction. Segmented iron cores arranged in the circumferential direction. A coil is sleeved on a segmented iron core. Holding seats of an insulating material correspond respectively to the segmented iron cores. A holding seat abuts with and covers a segmented iron core from both axial sides and the circumferential direction, and is used for winding the coil. The circuit substrate has slot holes. A slot hole is used for embedding and positioning a portion of a holding seat that protrudes more towards one axial side than the coil.

Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.

Abstract: Examples of an integrated circuit with gate cut features and a method for forming the integrated circuit are provided herein. In some examples, a workpiece is received that includes a substrate and a plurality of fins extending from the substrate. A first layer is formed on a side surface of each of the plurality of fins such that a trench bounded by the first layer extends between the plurality of fins. A cut feature is formed in the trench. A first gate structure is formed on a first fin of the plurality of fins, and a second gate structure is formed on a second fin of the plurality of fins such that the cut feature is disposed between the first gate structure and the second gate structure.

Abstract: Disclosed is a liquid crystal compound with negative dielectric anisotropy, having a general formula as Formula 1. In Formula 1, each of L1, L2, L3, and L4, being same or different, is hydrogen, halogen, or cyano group. Each of R1 and R2, being same or different, is hydrogen, halogen, C1-12 alkyl group, C1-12 alkoxy group, C1-12 haloalkyl group, C2-12 alkenyl group, C2-12 ether group, or C2-12 alkynyl group. Each of A1 and A2, being same or different, is benzene, cyclohexane, or cyclohexene. Z1 is —CF2O—, or —OCF2—, and Z2 is —CF2O—, or —OCF2—.

Abstract: Disclosed is a liquid crystal compound with negative dielectric anisotropy, having a general formula as Formula 1. In Formula 1, each of L1, L2, L3, and L4, being same or different, is hydrogen, halogen, or cyano group. Each of R1 and R2, being same or different, is hydrogen, halogen, C1-12 alkyl group, C1-12 alkoxy group, C1-12 haloalkyl group, C2-12 alkenyl group, C2-12 ether group, or C2-12 alkynyl group. Each of A1 and A2, being same or different, is benzene, cyclohexane, or cyclohexene. Z1 is —CF2O—, or —OCF2—, and Z2 is —CF2O—, or —OCF2—.

Abstract: Disclosed is a liquid-crystal compound with negative dielectric anisotropy, having the chemical formula: wherein A1, A2, and A3 are independently selected from cyclohexyl group, cyclohexenyl group, or phenyl group; L1 and L2 are independently selected from H or F; R is selected from H, F, Cl, C1-10 alkyl group, C1-10 alkenyl group, C1-10 alkoxy group, or C1-10 ether group; Y is fluorinated methyl group; m and n are independently selected from an integer of 0-2; and 1?m+n?3.

Abstract: Disclosed is a liquid-crystal compound with negative dielectric anisotropy, having the chemical formula: wherein A1, A2, and A3 are independently selected from cyclohexyl group, cyclohexenyl group, or phenyl group; L1 and L2 are independently selected from H or F; R is selected from H, F, Cl, C1-10 alkyl group, C1-10 alkenyl group, C1-10 alkoxy group, or C1-10 ether group; Y is fluorinated methyl group; m and n are independently selected from an integer of 0-2; and 1?m+n?3.

Abstract: A method of recycling a cholesteric liquid crystal is provided. The method includes providing a display medium material containing a micro-encapsulated cholesteric liquid crystal. The display medium material is mixed with a hydrophilic solvent to form a mixture having a temperature of between 70° C. and 100° C. Then, a hydrophobic solvent is added to mix with the hydrophilic solvent. The display medium material, the hydrophobic solvent and the hydrophilic solvent are mixed to form a mixture having a hydrophobic layer and a hydrophilic layer. The hydrophobic layer and the hydrophilic layer of the mixture are separated, wherein the hydrophobic layer contains a cholesteric liquid crystal and the hydrophobic solvent. Then, the hydrophobic solvent is removed from the hydrophobic layer to obtain the cholesteric liquid crystal.

Abstract: A method of reusing micro-encapsulated cholesteric liquid crystals is provided. The method includes providing a display medium material containing a micro-encapsulated cholesteric liquid crystal and a dispersant. The display medium material is mixed with a solvent to form a mixture having a temperature of between 40° C. and 60° C. A centrifugal process is performed to the mixture for separating the micro-encapsulated cholesteric liquid crystal and the dispersant. Then, the dispersant and the solvent are removed to obtain the micro-encapsulated cholesteric liquid crystal.

Abstract: A method of reusing micro-encapsulated cholesteric liquid crystals is provided. The method includes providing a display medium material containing a micro-encapsulated cholesteric liquid crystal and a dispersant. The display medium material is mixed with a solvent to form a mixture having a temperature of between 40° C. and 60° C. A centrifugal process is performed to the mixture for separating the micro-encapsulated cholesteric liquid crystal and the dispersant. Then, the dispersant and the solvent are removed to obtain the micro-encapsulated cholesteric liquid crystal.

Abstract: A method of recycling a cholesteric liquid crystal is provided. The method includes providing a display medium material containing a micro-encapsulated cholesteric liquid crystal. The display medium material is mixed with a hydrophilic solvent to form a mixture having a temperature of between 70° C. and 100° C. Then, a hydrophobic solvent is added to mix with the hydrophilic solvent. The display medium material, the hydrophobic solvent and the hydrophilic solvent are mixed to form a mixture having a hydrophobic layer and a hydrophilic layer. The hydrophobic layer and the hydrophilic layer of the mixture are separated, wherein the hydrophobic layer contains a cholesteric liquid crystal and the hydrophobic solvent. Then, the hydrophobic solvent is removed from the hydrophobic layer to obtain the cholesteric liquid crystal.

Abstract: A liquid crystal compound of Formula (1) is provided below: wherein R is hydrogen, linear or branching C1-15 alkyl, linear or branching C1-15 alkyl (wherein any one of —CH2— is replaced by —O—, —S—, —CO—, —CO—O—, or —O—CO—), linear or branching C2-15 alkenyl, or linear or branching C2-15 alkenyl (wherein any one of —CH2— is replaced by —O—, —S—, —CO—, —CO—O—, or —O—CO—), A and B are, independently, cyclohexane, cyclohexane (wherein any one of —CH2— is replaced by —O— or —NH—), benzene, or benzene (wherein any one of —CH2? is replaced by —N?), X is a single bond, —CO—O—, —O—CO—, —CH2O—, —OCH2—, —CH2CH2—, —C?C—, —C?C—, —CF2O—, or —OCF2—, Q is oxygen or CH2, Y is CF3, CF2H, or CFH2, L1, L2, and L3 are, independently, hydrogen or fluorine, and m is 0, 1, or 2.

Abstract: An embodiment of the invention provides a chiral dopant having the following formula: wherein X1 and X2 are independently wherein F is fluorine, m is a positive integer from 1 to 8, and n is a positive integer from 1 to 4; Y1 and Y2 are independently —O—, —CH2CH2—, —CH?CH—, —C(O)O—, or —CH2O—; and R1, R2 are independently substituted or non-substituted C1-C10 linear alkyl, wherein substituents of the substituted C1-C10 linear alkyl are independently —F, —Cl, —OCF3, —NCS, or —CN, wherein a number of backbone carbon atoms in each of —Y1R1 and —Y2R2 is larger than 3.

Abstract: An embodiment of the invention provides a chiral dopant having the following formula: wherein X1 and X2 are independently wherein F is fluorine, m is a positive integer from 1 to 8, and n is a positive integer from 1 to 4; Y1 and Y2 are independently —O—, —CH2CH2—, —CH?CH—, —C(O)O—, or —CH2O—; and R1, R2 are independently substituted or non-substituted C1-C10 linear alkyl, wherein substituents of the substituted C1-C10 linear alkyl are independently —F, —Cl, —OCF3, —NCS, or —CN, wherein a number of backbone carbon atoms in each of —Y1R1 and —Y2R2 is larger than 3.

Abstract: A liquid crystal compound of Formula (1) is provided. In Formula (1), R is hydrogen, linear or branching C1-15 alkyl, linear or branching C1-15 alkyl (wherein any one of —CH2— is replaced by —O—, —S—, —CO—, —CO—O—, or —O—CO—), linear or branching C2-15 alkenyl, or linear or branching C2-15 alkenyl (wherein any one of —CH2— is replaced by —O—, —S—, —CO—, —CO—O—, or —O—CO—), A and B are, independently, cyclohexane, cyclohexane (wherein any one of —CH2— is replaced by —O— or —NH—), benzene, or benzene (wherein any one of —CH2? is replaced by —N?), X is a single bond, —CO—O—, —O—CO—, —CH2O—, —OCH2—, —CH2CH2—, —C?C—, —C?C—, —CF2O—, or —OCF2—, Q is oxygen or CH2, Y is CF3, CF2H, or CFH2, L1, L2, and L3 are, independently, hydrogen or fluorine, and m is 0, 1, or 2.

Abstract: An environmentally friendly weight block for diver's weight belt is disclosed to include a weight formed of a lead block made in the shape of an English letter and coated with a layer of anti-corrosion plastic coating, and a clip or belt loop affixed to the back side of the weight for fastening to a diver's weight belt.