Abstract: A semiconductor device includes a semiconductor layer. A gate structure is disposed over the semiconductor layer. A spacer is disposed on a sidewall of the gate structure. A height of the spacer is greater than a height of the gate structure. A liner is disposed on the gate structure and on the spacer. The spacer and the liner have different material compositions.

Abstract: A method includes providing a first channel layer and a second channel layer over a substrate; forming a first patterned hard mask covering the first channel layer and exposing the second channel layer; selectively depositing a cladding layer on the second channel layer and not on the first patterned hard mask; performing a first thermal drive-in process; removing the first patterned hard mask; after removing the first patterned hard mask, forming an interfacial dielectric layer on the cladding layer and the first channel layer; and forming a high-k dielectric layer on the interfacial dielectric layer.

Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.

Abstract: An organic light emitting element includes a substrate, a first electrode, an organic light emitting layer, and a fluorine-containing ion residue region. The first electrode is over the substrate. The organic light emitting layer is over the first electrode. The fluorine-containing ion residue region is on at least one surface of the organic light emitting layer.

Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.

Abstract: An integrated circuit (IC) device comprises a substrate having a metal-oxide-semiconductor (MOS) region; a gate region disposed over the substrate and in the MOS region; and source/drain features in the MOS region and separated by the gate region. The gate region includes a fin structure and a nanowire over the fin structure. The nanowire extends from the source feature to the drain feature.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a first channel structure configured to transport charge carriers within a first transistor device and a first gate electrode layer wrapping around the first channel structure. A second channel structure is configured to transport charge carriers within a second transistor device. A second gate electrode layer wraps around the second channel structure. The second gate electrode layer continuously extends from around the second channel structure to cover the first gate electrode layer. A third channel structure is configured to transport charge carriers within a third transistor device. A third gate electrode layer wraps around the third channel structure. The third gate electrode layer continuously extends from around the third channel structure to cover the second gate electrode layer.

Abstract: A semiconductor device includes a first contact layer, a second contact layer, an active layer, a photonic crystal layer, a passivation layer, a first electrode and a second electrode. The first contact layer has a first surface and a second surface opposite to each other. Microstructures are located on the second surface. The second contact layer is located below the first surface. The active layer is located between the first contact layer and the second contact layer. The photonic crystal layer is located between the active layer and the second contact layer. The passivation layer is located on the second contact layer. The first electrode is located on the passivation layer and is electrically connected the first surface of the first contact layer. The second electrode is located on the passivation layer and is electrically connected to the second contact layer.

Abstract: The application relates to a light-emitting assembly including a substrate and an effective light-emitting region. The substrate has a first surface and a second surface that are opposite to each other and has a transparent material. The light shielding layer is disposed on the first surface of the substrate, and a first edge and a second edge of the light shielding layer are spaced apart from each other, thereby forming an opening. The effective light-emitting region is defined on the second surface of the substrate, and the effective light-emitting region and the first edge of the light shielding layer are offset by a first distance in a lateral direction. The first distance is associated with a refractive index of the substrate, a refractive index of a material in the opening of the light shielding layer, and a thickness of the substrate.

Abstract: A light-emitting element comprises a substrate, a light shielding layer, a capping layer and a plurality of protrusions. The light shielding layer is above the substrate. The capping layer is above the light shielding layers. The plurality of protrusions is arranged over the substrate, an organic light-emitting unit comprising an organic material being disposed between two adjacent protrusions of the plurality of protrusions. An edge of the light shielding layer is misaligned with an edge of one of the plurality of protrusions. The organic light-emitting unit includes a first light-emitting unit and a second light-emitting unit. The first light-emitting unit and the second light-emitting unit respectively have an organic light-emitting stack layer comprising an organic material.

Abstract: A light-emitting element comprises a substrate, a plurality of light shielding layers, a capping layer, a conductive layer and a plurality of protrusions. The plurality of light shielding layers is under the substrate. The capping layer contacts a first surface of the substrate and covers the plurality of light shielding layers. The conductive layer contacts a second surface of the substrate. The plurality of protrusions is arranged on the second surface of the substrate and covers a part of the conductive layer, and an organic light-emitting unit comprising an organic material is disposed between two adjacent protrusions of the plurality of protrusions. One of the plurality of protrusions has an edge, which is offset from an edge of one of the plurality of light shielding layers in the longitudinal direction from each other.

Abstract: A light emitting element includes a light emitting array, a plurality of cladding layers and an insulating photosensitive material layer. The light emitting array includes a first organic light emitting unit and a second organic light emitting unit. The first organic light emitting unit includes a first electrode, and the second organic light emitting unit includes a second electrode. The plurality of cladding layers includes a first cladding layer and a second cladding layer, wherein the first cladding layer covers a portion of an upper surface and a sidewall of the first electrode, and the second cladding layer covers a portion of an upper surface and a sidewall of the second electrode. The insulating photosensitive material layer is located between the sidewall of the first electrode and the sidewall of the second electrode, and the insulating photosensitive material layer partially covers the upper surface of the first electrode.

Abstract: A display device includes a substrate and an optical sensing unit disposed on the substrate. The optical sensing unit includes a photodiode, a dielectric layer, and a second electrode. The photodiode is disposed on the substrate and includes a sidewall and an upper surface. The dielectric layer is disposed on the substrate and on the sidewall of the photodiode, and is in contact with a first portion of the upper surface of the photodiode. The second electrode includes a first conductive layer and a second conductive layer, wherein the first conductive layer is disposed on a second portion of the upper surface of the photodiode, and the second conductive layer is disposed between the dielectric layer and the first conductive layer. The first portion of the upper surface of the photodiode encircles the second portion.

Abstract: The present disclosure provides a light emitting device. The light emitting device includes a first substrate and a second substrate below the first substrate. The light emitting device also includes a light sensing region in the second substrate, and a light emitting pixel over the first substrate. The light emitting pixel includes a first electrode having a recession concave downward to the second substrate. The light emitting pixel also includes a second electrode over the first electrode. The light emitting pixel also includes an organic layer disposed between the first electrode and the second electrode in a vertical direction. The recession is partially overlapped with the light sensing region in the vertical direction. A method for compensating light emitting device power supply voltage drop is also provided.

Abstract: A display device includes a light emitting device, a photo sensing layer, a first electronic component and a second electronic component. The light emitting device emits light. The light emitting device has a plurality of light emitting units. The photo sensing layer receives the light and generates a first signal according to the received light. The first signal corresponds to a parameter of the light emitting units. The first electronic component controls the light emitting units. The second electronic component compares the first signal with data corresponding to a predetermined parameter of the light emitting units and identities which light emitting unit has a different parameter with respect to the predetermined parameter.

Abstract: A touch display, includes: a driver integrated circuit (IC) and a touch display panel. The driver IC is arranged to selectively control the touch display to operate in a touch mode or a fingerprint mode. The touch display panel includes a first section and a second section. The first section includes a plurality of first electrodes, wherein the first section is arranged to sense a touch maneuver of a user. The second section includes a plurality of second electrodes, and a bottom surface of the second section and a bottom surface of the first section are coplanar. The second section is arranged to sense a biometric of the user when the touch display operates in the biometric mode, and sense the touch maneuver of the user when the touch display operates in the touch mode.

Abstract: A display panel is disclosed. The display panel includes a plurality of pixels arranged in a pixel array, a first selecting circuit, and a control circuit. The pixel array includes a plurality of rows. The first selecting circuit is coupled to the display panel, and includes a plurality of clusters of first switch. Each first switch couples to a row, and the plurality of clusters of first switch are arranged to be sequentially and repeatedly activated, wherein a number of the row is greater than a number of first switches in one cluster. The control circuit is coupled to the first selecting circuit, and arranged to sequentially provide a pulse signal to the display panel via a cluster of first switch being activated.