Abstract: An integrated circuit device is provided. The integrated circuit device includes a semiconductor substrate having a circuit area and a guarding area surrounding the circuit area. A guarding structure is formed in the guarding area, and includes a diffusion region in the semiconductor substrate. The guarding structure also includes a gate stack disposed on the semiconductor substrate and positioned adjacent to the diffusion region. The guarding structure further includes a guarding layer disposed on the gate stack. The gate stack extends in a first direction while the guarding layer extends in a second direction that is different from the first direction. The guarding layer is electrically insulated from the diffusion region. Thus, an integrated circuit device including a guarding structure with several capacitors is provided.

Abstract: An integrated circuit device is provided. The integrated circuit device includes a semiconductor substrate having a circuit area and a guarding area surrounding the circuit area. A guarding structure is formed in the guarding area, and includes a diffusion region in the semiconductor substrate. The guarding structure also includes a gate stack disposed on the semiconductor substrate and positioned adjacent to the diffusion region. The guarding structure further includes a guarding layer disposed on the gate stack. The gate stack extends in a first direction while the guarding layer extends in a second direction that is different from the first direction. The guarding layer is electrically insulated from the diffusion region. Thus, an integrated circuit device including a guarding structure with several capacitors is provided.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate, a well region on the semiconductor substrate, a radio frequency circuit, a first guard ring adjacent to the RF circuit, and a first isolation region directly disposed between the RF circuit and the first guard ring. The well region has a first conductive type. The RF circuit includes a FIN field-effect transistor having a plurality of first fins and a plurality of first polys on the well region, wherein the first polys are perpendicular to the first fins. The first guard ring includes a plurality of second fins and a pair of second polys on the well region, wherein the second polys are perpendicular to the second fins. The first fins are arranged parallel to the second fins, and the first fins are separated from the second fins by the first isolation region.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate, a well region on the semiconductor substrate, a radio frequency circuit, a first guard ring adjacent to the RF circuit, and a first isolation region directly disposed between the RF circuit and the first guard ring. The well region has a first conductive type. The RF circuit includes a FIN field-effect transistor having a plurality of first fins and a plurality of first polys on the well region, wherein the first polys are perpendicular to the first fins. The first guard ring includes a plurality of second fins and a pair of second polys on the well region, wherein the second polys are perpendicular to the second fins. The first fins are arranged parallel to the second fins, and the first fins are separated from the second fins by the first isolation region.