Abstract: An integrated circuit (IC) with active and dummy device cell arrays and a method of fabricating the same are discloses. The IC includes a substrate, an active device cell, and a dummy device cell. The active device cell includes an array of source/drain (S/D) regions of a first conductivity type disposed on or within the substrate and an array of gate structures with a first gate fill material disposed on the substrate. The dummy device cell includes a first array of S/D regions of the first conductivity type disposed on or within the substrate, a second array of S/D regions of a second conductivity type disposed on or within the substrate, and an array of dual gate structures disposed on the substrate. Each of the dual gate structures includes the first gate fill material and a second gate fill material that is different from the first gate fill material.

Abstract: An integrated circuit (IC) with active and dummy device cell arrays and a method of fabricating the same are discloses. The IC includes a substrate, an active device cell, and a dummy device cell. The active device cell includes an array of source/drain (S/D) regions of a first conductivity type disposed on or within the substrate and an array of gate structures with a first gate fill material disposed on the substrate. The dummy device cell includes a first array of S/D regions of the first conductivity type disposed on or within the substrate, a second array of S/D regions of a second conductivity type disposed on or within the substrate, and an array of dual gate structures disposed on the substrate. Each of the dual gate structures includes the first gate fill material and a second gate fill material that is different from the first gate fill material.

Abstract: A semiconductor arrangement is provided and includes a gate electrode. The gate electrode includes a first portion over a first interface between an active region and an isolation structure and a second portion over the active region. The first portion has a first material composition. The second portion has a second material composition different than the first material composition.

Abstract: An integrated circuit (IC) with active and dummy device cell arrays and a method of fabricating the same are discloses. The IC includes a substrate, an active device cell, and a dummy device cell. The active device cell includes an array of source/drain (S/D) regions of a first conductivity type disposed on or within the substrate and an array of gate structures with a first gate fill material disposed on the substrate. The dummy device cell includes a first array of S/D regions of the first conductivity type disposed on or within the substrate, a second array of S/D regions of a second conductivity type disposed on or within the substrate, and an array of dual gate structures disposed on the substrate. Each of the dual gate structures includes the first gate fill material and a second gate fill material that is different from the first gate fill material.