Abstract: Methods and semiconductor devices are provided. A method includes determining a location of a polyimide opening (PIO) corresponding to an under-bump metallization (UBM) feature in a die. The die includes a substrate and an interconnect structure over the substrate. The method also includes determining a location of a stacked via structure in the interconnect structure based on the location of the PIO. The method further includes forming, in the interconnect structure, the stacked via structure comprising at most three stacked contact vias at the location of the PIO.

Abstract: A wafer storage and transport device is adapted to store and transport a storage box. The wafer storage and transport device includes a housing, a rotary rack and a transport mechanism. The housing has a transport zone. The rotary rack is rotatable about an axis, and includes a plurality of angularly spaced-apart carrier seats that surround the axis. Each of the carrier seats is rotatable to correspond in position to the transport zone of the housing, and is adapted for the storage box to be disposed co-rotatably thereon. The transport mechanism is for transporting the storage box out of the housing when the storage box is rotated by the rotary rack to correspond in position to the transport zone of the housing.

Abstract: The steps of a method for fabricating a proximity sensing module that is adapted to be attached to a mobile device, include: (a) patterning an upper conductive film to form a patterned conductive film which includes an upper connective pad that is adapted to be electrically connected to a respective contact on a circuit board of the mobile device, and an induced circuit pattern that is electrically connected to the upper connective pad; (b) adhering an adhesive sheet to the patterned conductive film; and (c) forming a through hole in the adhesive sheet such that the upper connective pad is exposed from the through hole.

Abstract: The steps of a method for fabricating a proximity sensing module that is adapted to be attached to a mobile device, include: (a) patterning an upper conductive film to form a patterned conductive film which includes an upper connective pad that is adapted to be electrically connected to a respective contact on a circuit board of the mobile device, and an induced circuit pattern that is electrically connected to the upper connective pad; (b) adhering an adhesive sheet to the patterned conductive film; and (c) forming a through hole in the adhesive sheet such that the upper connective pad is exposed from the through hole.

Abstract: A memory storage device and a read/write method thereof, first defining logically the flash memory as at least one particular data management area and at least one common data management area; next, determining the logical block address located in the particular data management area or the common data management area according to data transmitted to an external system by an area decision mechanism, wherein the method of writing to the particular data management area is by using a method of dynamic deviation value, and the method of writing to the common data management area is by using a method of same displacement value. Whereby, the particular data management area can be avoided moving frequently caused by updating data from the external system to improve read/write performance of the flash memory.

Abstract: A memory storage device and a read/write method thereof, first defining logically the flash memory as at least one particular data management area and at least one common data management area; next, determining the logical block address located in the particular data management area or the common data management area according to data transmitted to an external system by an area decision mechanism, wherein the method of writing to the particular data management area is by using a method of dynamic deviation value, and the method of writing to the common data management area is by using a method of same displacement value. Whereby, the particular data management area can be avoided moving frequently caused by updating data from the external system to improve read/write performance of the flash memory.