Abstract: The present disclosure is relates to a conductive film and a manufacturing method thereof. The conductive film includes a base layer, a TPU complex layer, a conductive layer and a TPU surface layer. The TPU complex layer includes a TPU heat-resistant layer and a TPU melting layer. The TPU heat-resistant layer is disposed on the TPU melting layer, and the TPU melting layer is disposed on the base layer. The conductive layer includes a conductive circuit disposed on the TPU heat-resistant layer. The TPU surface layer is disposed on the conductive layer. Utilizing the TPU complex layer, the conductive layer does not contact directly with the base layer to avoid breaking the conductive line of the conductive layer when the base layer is pulled. Therefore, the lifetime of the conductive film can be increased.

Abstract: The present disclosure is relates to a TPU ball structure and a manufacturing method thereof. The TPU ball structure includes a ball bladder layer, a yarn layer and a surface layer. The ball bladder layer is made of TPU material. The yarn layer is made of TPU material, and the yarn layer is disposed to cover the ball bladder layer. The surface layer is made of TPU material, and the surface layer is disposed to cover the yarn layer. The above layers of the TPU ball structure are made of TPU material to satisfy a requirement for environmental protection, and are recyclable. There is no need to use adhesive to adhere the above layers of the TPU ball structure. Therefore, the peeling strength between the layers of the TPU ball structure can be increased so that the whole peeling strength of the TPU ball structure can be increased.

Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.

Abstract: A method of forming a FinFET is disclosed. The method includes depositing a conductive material across each of a number of adjacent fins, depositing a sacrificial mask over the conductive material, patterning the conductive material with the sacrificial mask to form a plurality of conductive material segments, depositing a sacrificial layer over the sacrificial mask, and patterning the sacrificial layer, where a portion of the patterned sacrificial layer remains over the sacrificial mask, where a portion of the sacrificial mask is exposed, and where the exposed portion of the sacrificial mask extends across each of the adjacent fins. The method also includes removing the portion of the sacrificial layer over the sacrificial mask, after removing the portion of the sacrificial layer over the sacrificial mask, removing the sacrificial mask, epitaxially growing a plurality of source/drain regions from the semiconductor substrate, and electrically connecting the source/drain regions to other devices.

Abstract: The present disclosure provides a thin film including a first thermoplastic polyolefin (TPO) elastomer which is anhydride-grafted. The present disclosure further provides a method for manufacturing the thin film, a laminated material and a method for adhesion.

Abstract: An anode catalyst material has a chemical formula of FeaNibMcNdOe, wherein M is Mo, W, Sn, Si, Nb, V, Cr, Ta or a combination thereof. a+b+c+d+e=1, a>0, b>0, c>0, d?0, and e?0. The anode catalyst material can be used in a water electrolysis device for hydrogen evolution, which includes an anode and a cathode disposed in an alkaline aqueous solution, and the anode includes the described anode catalyst material.

Abstract: A membrane electrode assembly includes a first electrode, a second electrode, and an anion exchange membrane disposed between the first electrode and the second electrode. The first electrode includes a first metal mesh, a first catalyst layer wrapping the first metal mesh, a second metal mesh, and a second catalyst layer wrapping the second metal mesh. The first metal mesh is disposed between the anion exchange membrane and the second metal mesh. The second metal mesh is thicker than the first metal mesh, and the first catalyst layer is thicker than the second catalyst layer. The second catalyst layer is iron, cobalt, manganese, zinc, niobium, molybdenum, ruthenium, platinum, gold, or aluminum. The second catalyst layer is crystalline.

Abstract: A membrane electrode assembly includes a first electrode, a second electrode, and an anion exchange membrane disposed between the first electrode and the second electrode. The first electrode includes a first metal mesh, a first catalyst layer wrapping the first metal mesh, a second metal mesh, and a second catalyst layer wrapping the second metal mesh. The first metal mesh is disposed between the anion exchange membrane and the second metal mesh. The second metal mesh is thicker than the first metal mesh, and the first catalyst layer is thicker than the second catalyst layer. The second catalyst layer is iron, cobalt, manganese, zinc, niobium, molybdenum, ruthenium, platinum, gold, or aluminum. The second catalyst layer is crystalline.

Abstract: A method for manufacturing catalyst material is provided, which includes putting an M? target and an M? target into a nitrogen-containing atmosphere, in which M? is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, and M? is Nb, Ta, or a combination thereof. Powers are provided to the M? target and the M? target, respectively. Providing ions to bombard the M? target and the M? target to sputtering deposit M?aM?bN2 on a substrate, wherein 0.7?a?1.7, 0.3?b?1.3, and a+b=2, wherein M?aM?bN2 is a cubic crystal system.

Abstract: A method for manufacturing nitride catalyst is provided, which includes putting a Ru target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn. The method also includes providing powers to the Ru target and the M target, respectively. The method also includes providing ions to bombard the Ru target and the M target for depositing MxRuyN2 on a substrate by sputtering, wherein 0<x<1.3, 0.7<y<2, and x+y=2, wherein MxRuyZ2 is cubic crystal system or amorphous.

Abstract: A membrane electrode assembly includes an anode having a first catalyst layer on a first gas-liquid diffusion layer, a cathode having a second catalyst layer on a second gas-liquid diffusion layer, and an anionic exchange membrane between the first catalyst layer of the anode and the second catalyst layer of the cathode. The first catalyst layer has a chemical structure of M?aM?bN2 or M?cM?dCe, wherein M? is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, M? is Nb, Ta, or a combination thereof, 0.7?a?1.7, 0.3?b?1.3, a+b=2, 0.24?c?1.7, 0.3?d?1.76, and 0.38?e?3.61, wherein M?aM?bN2 is a cubic crystal system and M?cM?d Ce is a cubic crystal system or amorphous.

Abstract: A method for hydrogen evolution by electrolysis includes soaking a membrane electrode assembly into an alkaline aqueous solution. The membrane electrode assembly includes an anode having a first catalyst layer on a first gas-liquid diffusion layer, a cathode having a second catalyst layer on a second gas-liquid diffusion layer, and a cationic exchange membrane between the first catalyst layer of the anode and the second catalyst layer of the cathode. The first catalyst layer, the second catalyst layer, or both of the above has a chemical structure of MxRuyN2, wherein M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, 0<x<1.3, 0.7<y<2, and x+y=2, wherein MxRuyN2 is cubic crystal system or amorphous. The method also applies a voltage to the anode and the cathode for electrolysis of the alkaline aqueous solution, thereby producing hydrogen at the cathode and producing oxygen at the anode.

Abstract: A method for manufacturing nitride catalyst is provided, which includes putting a Ru target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn. The method also includes providing powers to the Ru target and the M target, respectively. The method also includes providing ions to bombard the Ru target and the M target for depositing MxRuyN2 on a substrate by sputtering, wherein 0<x<1.3, 0.7<y<2, and x+y=2, wherein MxRuyZ2 is cubic crystal system or amorphous.

Abstract: A membrane electrode assembly includes an anode having a first catalyst layer on a first gas-liquid diffusion layer, a cathode having a second catalyst layer on a second gas-liquid diffusion layer, and an anionic exchange membrane between the first catalyst layer of the anode and the second catalyst layer of the cathode. The first catalyst layer has a chemical structure of M?aM?bN2 or M?cM?dCe, wherein M? is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, M? is Nb, Ta, or a combination thereof, 0.7?a?1.7, 0.3?b?1.3, a+b=2, 0.24?c?1.7, 0.3?d?1.76, and 0.38?e?3.61, wherein M?aM?bN2 is a cubic crystal system and M?cM?d Ce is a cubic crystal system or amorphous.

Abstract: A method for hydrogen evolution by electrolysis includes soaking a membrane electrode assembly into an alkaline aqueous solution. The membrane electrode assembly includes an anode having a first catalyst layer on a first gas-liquid diffusion layer, a cathode having a second catalyst layer on a second gas-liquid diffusion layer, and a cationic exchange membrane between the first catalyst layer of the anode and the second catalyst layer of the cathode. The first catalyst layer, the second catalyst layer, or both of the above has a chemical structure of MxRuyN2, wherein M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, 0<x<1.3, 0.7<y<2, and x+y=2, wherein MxRuyN2 is cubic crystal system or amorphous. The method also applies a voltage to the anode and the cathode for electrolysis of the alkaline aqueous solution, thereby producing hydrogen at the cathode and producing oxygen at the anode.

Abstract: A method for manufacturing catalyst material is provided, which includes putting an M? target and an M? target into a nitrogen-containing atmosphere, in which M? is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, and M? is Nb, Ta, or a combination thereof. Powers are provided to the M? target and the M? target, respectively. Providing ions to bombard the M? target and the M? target to sputtering deposit M?aM?bN2 on a substrate, wherein 0.7?a?1.7, 0.3?b?1.3, and a+b=2, wherein M?aM?bN2 is a cubic crystal system.

Abstract: A method for manufacturing nitride catalyst is provided, which includes putting a Ru target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn. The method also includes providing powers to the Ru target and the M target, respectively. The method also includes providing ions to bombard the Ru target and the M target for depositing MxRuyN2 on a substrate by sputtering, wherein 0<x<1.3, 0.

Abstract: A heat sink has a number of fixing frames. The fixing frames are soldered with of solar cell devices. And, the fixing frames are defined with insulating ink. Hence, the fixing frames can be used for insulating and locating the of a solar cell devices. Besides, with the insulating ink, solar cells of the solar cell devices are prevented from being contacted with the heat sink. As a result, a good electrical property is obtained on assembling and using the solar cell devices.

Abstract: Disclosed is a cable for use in a concentrating photovoltaic module. The cable includes at least one strand wrapped with an optically pervious or reflective sheath. The pervious sheath is made of a material that exhibits a penetration rate of 90% and survives a temperature of at least 140 degrees Celsius. The reflective sheath is made of a material that exhibits a reflection rate of 95% and survives a temperature of at least 140 degrees Celsius. The cable is used to connect an anode of the concentrating photovoltaic module to a cathode of the same. The material of the reflective sheath may be isolating.

Abstract: Disclosed is a cable for use in a concentrating photovoltaic module. The cable includes at least one strand wrapped with an optically pervious or reflective sheath. The pervious sheath is made of a material that exhibits a penetration rate of 90% and survives a temperature of at least 140 degrees Celsius. The reflective sheath is made of a material that exhibits a reflection rate of 95% and survives a temperature of at least 140 degrees Celsius. The cable is used to connect an anode of the concentrating photovoltaic module to a cathode of the same. The material of the reflective sheath may be isolating.