Patents by Inventor Kuo-Hung Chao
Kuo-Hung Chao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230367220Abstract: Fluid pressure flowing through first main line in pressure compensator using first pressure sensor is measured. Fluid flows along first main line through pressure compensator to semiconductor device processing apparatus, through apparatus, then through compensator via second main line. First pressure sensor is attached to first pressure sensor line branching off first main line. Fluid pressure flowing through second main line is measured using second pressure sensor. Second pressure sensor is attached to second pressure sensor line branching off second main line. Pressure difference between fluid flowing through first and second main lines is determined. Fluid flow rate is adjusted when difference is greater than threshold amount. A first tank is attached to one of first or second main lines via a conduit, and second tank is attached to first or second pressure sensor line when first tank is attached to corresponding first or second main line via a conduit.Type: ApplicationFiled: May 16, 2022Publication date: November 16, 2023Inventors: Hsieh-Yu WEI, Yung-Yao LEE, Kuo-Hung CHAO
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Patent number: 9826615Abstract: The present disclosure relates to an extreme ultraviolet (EUV) radiation source having a collector mirror oriented to reduce contamination of fuel droplet debris. In some embodiments, the EUV radiation source has a fuel droplet generator that provides a plurality of fuel droplets to an EUV source vessel. A primary laser is configured to generate a primary laser beam directed towards the plurality of fuel droplets. The primary laser beam has a sufficient energy to ignite a plasma from the plurality of fuel droplets, which emits extreme ultraviolet radiation. A collector mirror, configured to focus the extreme ultraviolet radiation to an exit aperture of the EUV source vessel, which is oriented so that a normal vector extending outward from a vertex of the collector mirror intersects a direction of a gravitation force by an angle that is less than 90°.Type: GrantFiled: September 22, 2015Date of Patent: November 21, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jian-Yuan Su, Hung-Ming Kuo, Kuo-Hung Chao, Jui-Chun Peng
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Publication number: 20170086283Abstract: The present disclosure relates to an extreme ultraviolet (EUV) radiation source having a collector mirror oriented to reduce contamination of fuel droplet debris. In some embodiments, the EUV radiation source has a fuel droplet generator that provides a plurality of fuel droplets to an EUV source vessel. A primary laser is configured to generate a primary laser beam directed towards the plurality of fuel droplets. The primary laser beam has a sufficient energy to ignite a plasma from the plurality of fuel droplets, which emits extreme ultraviolet radiation. A collector mirror, configured to focus the extreme ultraviolet radiation to an exit aperture of the EUV source vessel, which is oriented so that a normal vector extending outward from a vertex of the collector mirror intersects a direction of a gravitation force by an angle that is less than 90°.Type: ApplicationFiled: September 22, 2015Publication date: March 23, 2017Inventors: Jian-Yuan Su, Hung-Ming Kuo, Kuo-Hung Chao, Jui-Chun Peng
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Patent number: 9466101Abstract: Among other things, systems and techniques are provided for detecting defects on a wafer based upon non-correctable error data yielded from a scan of the wafer to determine a topology of the wafer. The non-correctable error data is reconstructed to generate a non-correctable error image map, which is transformed to generate a projection. In some embodiments, the non-correctable error image map is transformed via a feature extraction transform such as a Hough transform or a Radon transform. In some embodiments, the projection is compared to a set of rules to identify a signature in the non-correctable error image map indicative of a defect.Type: GrantFiled: July 25, 2013Date of Patent: October 11, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Chun-Hsien Lin, Liu Bo-Tsun, Chin-Ti Ko, Wu Cheng-Hung, Kuo-Hung Chao, Peng Jui-Chun, Fei-Gwo Tsai, Heng-Hsin Liu, Jong-I Mou
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Patent number: 9228827Abstract: The present disclosure relates to a photolithography system having an ambulatory projection and/or detection gratings that provide for high quality height measurements without the use of an air gauge. In some embodiments, the photolithography system has a level sensor having a projection source that generates a measurement beam that is provided to a semiconductor substrate via a projection grating. A detector is positioned to receive a measurement beam reflected from the semiconductor substrate via a detection grating. An ambulatory element selectively varies an orientation of the projection grating and/or the detection grating to improve the measurement of the level sensor. By selectively varying an orientation of the projection and/or detection gratings, erroneous measurements of the level sensor can be eliminated.Type: GrantFiled: June 10, 2013Date of Patent: January 5, 2016Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kuo-Hung Chao, Heng-Hsin Liu, Jui-Chun Peng
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Patent number: 9123583Abstract: The present disclosure relates to a method of monitoring wafer topography. A position and orientation of a plurality first alignment shapes disposed on a surface of a wafer are measured. Wafer topography as a function of wafer position is modeled by subjecting the wafer to an alignment which simultaneously minimizes misalignment between the wafer and a patterning apparatus and maximizes a focus of radiation on the surface. A non-correctable error is determined as a difference between the modeled wafer topography and a measured wafer topography. A maximum non-correctable error per field is determined for a wafer, and a mean variation in the maximum non-correctable error across each field within each wafer of a lot is determined, both within a layer and across layers. These values are then verified against a set of statistical process control rules to determine if they are within a specification limit of the manufacturing process.Type: GrantFiled: July 12, 2013Date of Patent: September 1, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Hsien Lin, Kuo-Hung Chao, Yi-Ping Hsieh, Yen-Di Tsen, Jui-Chun Peng, Heng-Hsin Liu, Jong-I Mou
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Publication number: 20150015870Abstract: The present disclosure relates to a method of monitoring wafer topography. A position and orientation of a plurality first alignment shapes disposed on a surface of a wafer are measured. Wafer topography as a function of wafer position is modeled by subjecting the wafer to an alignment which simultaneously minimizes misalignment between the wafer and a patterning apparatus and maximizes a focus of radiation on the surface. A non-correctable error is determined as a difference between the modeled wafer topography and a measured wafer topography. A maximum non-correctable error per field is determined for a wafer, and a mean variation in the maximum non-correctable error across each field within each wafer of a lot is determined, both within a layer and across layers. These values are then verified against a set of statistical process control rules to determine if they are within a specification limit of the manufacturing process.Type: ApplicationFiled: July 12, 2013Publication date: January 15, 2015Inventors: Chun-Hsien Lin, Kuo-Hung Chao, Yi-Ping Hsieh, Yen-Di Tsen, Jui-Chun Peng, Heng-Hsin Liu, Jong-I Mou
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Publication number: 20140362359Abstract: The present disclosure relates to a photolithography system having an ambulatory projection and/or detection gratings that provide for high quality height measurements without the use of an air gauge. In some embodiments, the photolithography system has a level sensor having a projection source that generates a measurement beam that is provided to a semiconductor substrate via a projection grating. A detector is positioned to receive a measurement beam reflected from the semiconductor substrate via a detection grating. An ambulatory element selectively varies an orientation of the projection grating and/or the detection grating to improve the measurement of the level sensor. By selectively varying an orientation of the projection and/or detection gratings, erroneous measurements of the level sensor can be eliminated.Type: ApplicationFiled: June 10, 2013Publication date: December 11, 2014Inventors: Kuo-Hung Chao, Heng-Hsin Liu, Jui-Chun Peng
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Publication number: 20140328534Abstract: Among other things, systems and techniques are provided for detecting defects on a wafer based upon non-correctable error data yielded from a scan of the wafer to determine a topology of the wafer. The non-correctable error data is reconstructed to generate a non-correctable error image map, which is transformed to generate a projection. In some embodiments, the non-correctable error image map is transformed via a feature extraction transform such as a Hough transform or a Radon transform. In some embodiments, the projection is compared to a set of rules to identify a signature in the non-correctable error image map indicative of a defect.Type: ApplicationFiled: July 25, 2013Publication date: November 6, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: CHUN-HSIEN LIN, LIU BO-TSUN, CHIN-TI KO, WU CHENG-HUNG, KUO-HUNG CHAO, PENG JUI-CHUN, FEI-GWO TSAI, HENG-HSIN LIU, JONG-I MOU
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Patent number: 6309944Abstract: A new method is provided to align overlying layers for wafer stepper tools that are use for the manufacturing of semiconductor devices. A reference stepper and a reference mask are used, the mask contains a pattern of reference alignment marks that are created using this mask in a reference first surface on a substrate. A matching stepper that must be calibrated against the reference stepper is then used to create, using the reference mask, alignment marks in a second surface on a substrate. The alignment error between the reference alignment marks and the alignment marks that have been created in the second surface are measured and used as input to software modeling programs that provide numerical data indicating the corrections that must be applied to the matching stepper in order to adjust the alignment of the matching stepper to the alignment of the reference stepper.Type: GrantFiled: May 26, 2000Date of Patent: October 30, 2001Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Han-Ming Sheng, Cheng-Chen Kuo, Chu-Wen Huang, Kuo-Hung Chao