Abstract: An illumination device comprises one or more emitter modules having improved thermal and electrical characteristics. According to one embodiment, each emitter module comprises a plurality of light emitting diodes (LEDs) configured for producing illumination for the illumination device, one or more photodetectors configured for detecting the illumination produced by the plurality of LEDs, a substrate upon which the plurality of LEDs and the one or more photodetectors are mounted, wherein the substrate is configured to provide a relatively high thermal impedance in the lateral direction, and a relatively low thermal impedance in the vertical direction, and a primary optics structure coupled to the substrate for encapsulating the plurality of LEDs and the one or more photodetectors within the primary optics structure.

Abstract: An illumination device comprises one or more emitter modules having improved thermal and electrical characteristics. According to one embodiment, each emitter module comprises a plurality of light emitting diodes (LEDs) configured for producing illumination for the illumination device, one or more photodetectors configured for detecting the illumination produced by the plurality of LEDs, a substrate upon which the plurality of LEDs and the one or more photodetectors are mounted, wherein the substrate is configured to provide a relatively high thermal impedance in the lateral direction, and a relatively low thermal impedance in the vertical direction, and a primary optics structure coupled to the substrate for encapsulating the plurality of LEDs and the one or more photodetectors within the primary optics structure.

Abstract: An illumination device comprises one or more emitter modules having improved thermal and electrical characteristics. According to one embodiment, each emitter module comprises a plurality of light emitting diodes (LEDs) configured for producing illumination for the illumination device, one or more photodetectors configured for detecting the illumination produced by the plurality of LEDs, a substrate upon which the plurality of LEDs and the one or more photodetectors are mounted, wherein the substrate is configured to provide a relatively high thermal impedance in the lateral direction, and a relatively low thermal impedance in the vertical direction, and a primary optics structure coupled to the substrate for encapsulating the plurality of LEDs and the one or more photodetectors within the primary optics structure.

Abstract: An illumination device comprises one or more emitter modules having improved thermal and electrical characteristics. According to one embodiment, each emitter module comprises a plurality of light emitting diodes (LEDs) configured for producing illumination for the illumination device, one or more photodetectors configured for detecting the illumination produced by the plurality of LEDs, a substrate upon which the plurality of LEDs and the one or more photodetectors are mounted, wherein the substrate is configured to provide a relatively high thermal impedance in the lateral direction, and a relatively low thermal impedance in the vertical direction, and a primary optics structure coupled to the substrate for encapsulating the plurality of LEDs and the one or more photodetectors within the primary optics structure.

Abstract: An illumination device comprises one or more emitter modules having improved thermal and electrical characteristics. According to one embodiment, each emitter module comprises a plurality of light emitting diodes (LEDs) configured for producing illumination for the illumination device, one or more photodetectors configured for detecting the illumination produced by the plurality of LEDs, a substrate upon which the plurality of LEDs and the one or more photodetectors are mounted, wherein the substrate is configured to provide a relatively high thermal impedance in the lateral direction, and a relatively low thermal impedance in the vertical direction, and a primary optics structure coupled to the substrate for encapsulating the plurality of LEDs and the one or more photodetectors within the primary optics structure.

Abstract: An illumination device comprises one or more emitter modules having improved thermal and electrical characteristics. According to one embodiment, each emitter module comprises a plurality of light emitting diodes (LEDs) configured for producing illumination for the illumination device, one or more photodetectors configured for detecting the illumination produced by the plurality of LEDs, a substrate upon which the plurality of LEDs and the one or more photodetectors are mounted, wherein the substrate is configured to provide a relatively high thermal impedance in the lateral direction, and a relatively low thermal impedance in the vertical direction, and a primary optics structure coupled to the substrate for encapsulating the plurality of LEDs and the one or more photodetectors within the primary optics structure.

Abstract: An illumination device comprises one or more emitter modules having improved thermal and electrical characteristics. According to one embodiment, each emitter module comprises a plurality of light emitting diodes (LEDs) configured for producing illumination for the illumination device, one or more photodetectors configured for detecting the illumination produced by the plurality of LEDs, a substrate upon which the plurality of LEDs and the one or more photodetectors are mounted, wherein the substrate is configured to provide a relatively high thermal impedance in the lateral direction, and a relatively low thermal impedance in the vertical direction, and a primary optics structure coupled to the substrate for encapsulating the plurality of LEDs and the one or more photodetectors within the primary optics structure.

Abstract: An illumination device comprises one or more emitter modules having improved thermal and electrical characteristics. According to one embodiment, each emitter module comprises a plurality of light emitting diodes (LEDs) configured for producing illumination for the illumination device, one or more photodetectors configured for detecting the illumination produced by the plurality of LEDs, a substrate upon which the plurality of LEDs and the one or more photodetectors are mounted, wherein the substrate is configured to provide a relatively high thermal impedance in the lateral direction, and a relatively low thermal impedance in the vertical direction, and a primary optics structure coupled to the substrate for encapsulating the plurality of LEDs and the one or more photodetectors within the primary optics structure.

Abstract: An illumination device comprises one or more emitter modules having improved thermal and electrical characteristics. According to one embodiment, each emitter module comprises a plurality of light emitting diodes (LEDs) configured for producing illumination for the illumination device, one or more photodetectors configured for detecting the illumination produced by the plurality of LEDs, a substrate upon which the plurality of LEDs and the one or more photodetectors are mounted, wherein the substrate is configured to provide a relatively high thermal impedance in the lateral direction, and a relatively low thermal impedance in the vertical direction, and a primary optics structure coupled to the substrate for encapsulating the plurality of LEDs and the one or more photodetectors within the primary optics structure.

Abstract: Embodiments described herein provide a method for polishing a substrate surface. The methods generally include storing processing components in multiple storage units during processing, and combining the processing components to create a slurry while flowing the processing components to a polishing pad. A substrate is polished using the slurry, and the thickness of a material layer disposed on the substrate is determined. The flow rate of one or more processing components is then adjusted to affect the rate of removal of the material layer disposed on the substrate.

Abstract: Methods and apparatus are provided for polishing barrier layer materials. In one embodiment, a composition is provided for removing at least a barrier material from a substrate surface, including includes a base composition, a silica abrasive, a solvent, a pH between about 7 and about 10, and one or more components selected from the group of a metal passivating compound, an oxidizer, and an alumina abrasive. The composition may be used to chemical mechanical polishing process a substrate surface having a ruthenium-based barrier and one or more material selected from the group of a polysilicon layer, a dielectric layer, or metal layer.

Abstract: A method and apparatus for pre-conditioning a new soft polishing pad and processing a substrate on a soft polishing pad is described. The method includes coupling a soft polishing pad to a platen, contacting the processing surface of the soft polishing pad with a conditioning disk, applying a pressure conditioning disk, removing the conditioning disk from contact with the processing surface of the soft polishing pad, and contacting a first substrate with the processing surface of the soft polishing pad to perform a polishing process on the first substrate.

Abstract: Amorphous and polycrystalline III-V semiconductor including (Ga,As), (Al,As), (In,As), (Ga,N), and (Ga,P) materials were grown at low temperatures on semiconductor substrates. After growth, different substrates containing the low temperature grown material were pressed together in a pressure jig before being annealed. The annealing temperatures ranged from about 300° C. to 800° C. for annealing times between 30 minutes and 10 hours, depending on the bonding materials. The structures remained pressed together throughout the course of the annealing. Strong bonds were obtained for bonding layers between different substrates that were as thin as 3 nm and as thick as 600 nm. The bonds were ohmic with a relatively small resistance, optically transparent, and independent of the orientation of the underlying structures.

Abstract: Amorphous and polycrystalline III-V semiconductor including (Ga,As), (Al,As), (In,As), (Ga,N), and (Ga,P) materials were grown at low temperatures on semiconductor substrates. After growth, different substrates containing the low temperature grown material were pressed together in a pressure jig before being annealed. The annealing temperatures ranged from about 300° C. to 800° C. for annealing times between 30 minutes and 10 hours, depending on the bonding materials. The structures remained pressed together throughout the course of the annealing. Strong bonds were obtained for bonding layers between different substrates that were as thin as 3 nm and as thick as 600 nm. The bonds were ohmic with a relatively small resistance, optically transparent, and independent of the orientation of the underlying structures.

Abstract: Amorphous and polycrystalline III-V semiconductor including (Ga,As), (Al,As), (In,As), (Ga,N), and (Ga,P) materials were grown at low temperatures on semiconductor substrates. After growth, different substrates containing the low temperature grown material were pressed together in a pressure jig before being annealed. The annealing temperatures ranged from about 300° C. to 800° C. for annealing times between 30 minutes and 10 hours, depending on the bonding materials. The structures remained pressed together throughout the course of the annealing. Strong bonds were obtained for bonding layers between different substrates that were as thin as 3 nm and as thick as 600 nm. The bonds were ohmic with a relatively small resistance, optically transparent, and independent of the orientation of the underlying structures.