Abstract: P-type LDMOS devices have been difficult to integrate with N-type LDMOS devices without adding an extra mask because the former have been unable to achieve the same breakdown voltage as the latter due to early punch-through. This problem has been overcome by preceding the epitaxial deposition of N− silicon onto the P− substrate with an additional process step in which a buried N+ layer is formed at the surface of the substrate by ion implantation. This N+ buried layer significantly reduces the width of the depletion layer that extends outwards from the P− well when voltage is applied to the drain thus substantially raising the punch-through voltage.

Abstract: A pattern for monitoring epitaxial layer washout is disclosed. The pattern includes first and second sub-patterns. The first sub-pattern has a shape and defines one or more minimum dimensions. Obfuscation of the first sub-pattern means that epitaxial washout has occurred at least for dimensions equal to or less than the minimum dimensions. The second sub-pattern has the same shape of the first sub-pattern, but defines one or more maximum dimensions. Obfuscation of the second sub-pattern means that epitaxial washout has occurred for dimensions equal to or less than the maximum dimensions. The sub-patterns can include a pair of separated features, such as a pair of interlocking but separated L-shaped features, the separation of which defines the dimensions of the sub-patterns.

Abstract: A method for passivating a target layer. There is first provided a substrate. There is then formed over the substrate a target layer, where the target layer is susceptible to corrosion incident to contact with a corrosive material employed for further processing of the substrate. There is then treated, while employing a first plasma method employing a first plasma gas composition comprising an oxidizing gas, the target layer to form an oxidized target layer having an inhibited susceptibility to corrosion incident to contact with the corrosive material employed for further processing of the substrate. Finally, there is then processed further, while employing the corrosive material, the substrate. The method is useful when forming bond pads within microelectronic fabrications.

Abstract: A pattern for monitoring epitaxial layer washout is disclosed. The pattern includes first and second sub-patterns. The first sub-pattern has a shape and defines one or more minimum dimensions. Obfuscation of the first sub-pattern means that epitaxial washout has occurred at least for dimensions equal to or less than the minimum dimensions. The second sub-pattern has the same shape of the first sub-pattern, but defines one or more maximum dimensions. Obfuscation of the second sub-pattern means that epitaxial washout has occurred for dimensions equal to or less than the maximum dimensions. The sub-patterns can include a pair of separated features, such as a pair of interlocking but separated L-shaped features, the separation of which defines the dimensions of the sub-patterns.

Abstract: The tradeoff between breakdown voltage and on-resistance for LDMOS devices has been improved by having two epitaxial N−regions instead of the single epitaxial N−region that is used by devices of the prior art. The resistivities and thicknesses of these two N−regions are chosen so that their mean resistivity is similar to that of the aforementioned single N−layer. A key feature is that the lower N−layer (i.e. the one closest to the P−substrate) has a resistivity that is greater than that of the upper N−layer. If these constraints are met, as described in greater detail in the specification, improvements in breakdown voltage of up to 60% can be achieved without having to increase the on-resistance. A process for manufacturing the device is also described.

Abstract: P-type LDMOS devices have been difficult to integrate with N-type LDMOS devices without adding an extra mask because the former have been unable to achieve the same breakdown voltage as the latter due to early punch-through. This problem has been overcome by preceding the epitaxial deposition of N− silicon onto the P− substrate with an additional process step in which a buried N+ layer is formed at the surface of the substrate by ion implantation. This N+ buried layer significantly reduces the width of the depletion layer that extends outwards from the P− well when voltage is applied to the drain thus substantially raising the punch-through voltage.

Abstract: The tradeoff between breakdown voltage and on-resistance for LDMOS devices has been improved by having two epitaxial N− regions instead of the single epitaxial N− region that is used by devices of the prior art. The resistivities and thicknesses of these two N− regions are chosen so that their mean resistivity is similar to that of the aforementioned single N− layer. A key feature is that the lower N− layer (i.e. the one closest to the P− substrate) has a resistivity that is greater than that of the upper N− layer. If these constraints are met, as described in greater detail in the specification, improvements in breakdown voltage of up to 60% can be achieved without having to increase the on-resistance. A process for manufacturing the device is also described.

Abstract: The tradeoff between breakdown voltage and on-resistance for LDMOS devices has been improved by having two epitaxial N− regions instead of the single epitaxial N− region that is used by devices of the prior art. The resistivities and thicknesses of these two N− regions are chosen so that their mean resistivity is similar to that of the aforementioned single N− layer. A key feature is that the lower N− layer (i.e. the one closest to the P− substrate) has a resistivity that is greater than that of the upper N− layer. If these constraints are met, as described in greater detail in the specification, improvements in breakdown voltage of up to 60% can be achieved without having to increase the on resistance. A process for manufacturing the device is also described.

Abstract: P-type LDMOS devices have been difficult to integrate with N-type LDMOS devices without adding an extra mask because the former have been unable to achieve the same breakdown voltage as the latter due to early punch-through. This problem has been overcome by preceding the epitaxial deposition of N− silicon onto the P− substrate with an additional process step in which a buried N+ layer is formed at the surface of the substrate by ion implantation. This N+ buried layer significantly reduces the width of the depletion layer that extends outwards from the P− well when voltage is applied to the drain thus substantially raising the punch-through voltage.

Abstract: A process for forming self-aligned, twin well regions for a CMOS device, without the use of an oxidation retarding silicon nitride layer, has been developed. A first ion implantation procedure is used to place N type ions in a first portion of a semiconductor substrate, followed by a wet thermal oxidation procedure resulting in the growth of a thick silicon dioxide layer on the N type ions, in the first portion of the semiconductor substrate, while growing a thin silicon dioxide layer on a second portion of the lightly doped, P type semiconductor substrate. A second ion implantation procedure places P type ions through the thin silicon dioxide layer, into the second portion of the semiconductor substrate, while the thick silicon dioxide layer prevents the P type ions from reaching the first portion of the semiconductor substrate.