Patents by Inventor Kuo-Yuan Lin
Kuo-Yuan Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12009323Abstract: A semiconductor structure is provided. The semiconductor structure includes a first semiconductor device. The semiconductor structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first oxide layer formed below the a first substrate, a first bonding layer formed below the first oxide layer, and a first bonding via formed through the first bonding layer and the first oxide layer. The second semiconductor device includes a second oxide layer formed over a second substrate, a second bonding layer formed over the second oxide layer, and a second bonding via formed through the second bonding layer and the second oxide layer. The semiconductor structure also includes a bonding structure between the first substrate and the second substrate, and the bonding structure includes the first bonding via bonded to the second bonding via.Type: GrantFiled: July 26, 2022Date of Patent: June 11, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Yu Wei, Cheng-Yuan Li, Yen-Liang Lin, Kuo-Cheng Lee, Hsun-Ying Huang, Hsin-Chi Chen
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Publication number: 20240183082Abstract: A method for manufacturing an elastic fiber and the elastic fiber are provided. The method includes: providing a thermoplastic polyester elastomer; drying the thermoplastic polyester elastomer; melting the thermoplastic polyester elastomer by an extruder to form a melt; extruding the melt by a spinneret plate to form a plurality of filamentous streams; feeding the filamentous streams into a spinning channel for cooling and curing to form a plurality of monofilaments; and bundling and oiling the monofilaments by an oil wheel, after extending and guiding the monofilaments by a first godet roller and a second godet roller, and winding the monofilaments by a winder to obtain a thermoplastic polyester elastic fiber.Type: ApplicationFiled: October 27, 2023Publication date: June 6, 2024Inventors: CHIH-YI LIN, KUO-KUANG CHENG, LI-YUAN CHEN, CHI-WEI CHANG, CHIA-CHUN YANG
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Patent number: 11987027Abstract: The present disclosure relates to an innovative leather and a manufacturing method thereof. The innovative leather includes a TPU substrate, a TPU adhering layer, and a TPU surface layer. The TPU adhering layer is disposed on the TPU substrate. The TPU surface layer is disposed on the TPU adhering layer. All materials of the innovative leather of the present disclosure are the same TPU materials, thus the innovative leather of the present disclosure can be recycled after the innovative leather of the present disclosure is used. The innovative leather of the present disclosure has recycling benefit.Type: GrantFiled: June 22, 2022Date of Patent: May 21, 2024Assignee: SAN FANG CHEMICAL INDUSTRY CO., LTD.Inventors: Chih-Yi Lin, Kuo-Kuang Cheng, Li-Yuan Chen, Yung-Yu Fu
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Publication number: 20240153812Abstract: A method for fabricating a semiconductor device includes the steps of first forming a shallow trench isolation (STI) in a substrate, forming a first gate structure on the substrate and adjacent to the STI, forming a first doped region between the first gate structure and the STI, forming a second doped region between the first doped region and the first gate structure, forming a first contact plug on the first doped region, and then forming a second contact plug on the second doped region.Type: ApplicationFiled: December 4, 2022Publication date: May 9, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Wen-Kai Lin, Chi-Horn Pai, Sheng-Yuan Hsueh, Kuo-Hsing Lee, Chih-Kai Kang
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Patent number: 11951569Abstract: In some embodiments, the present disclosure relates to a wafer edge trimming apparatus that includes a processing chamber defined by chamber housing. Within the processing chamber is a wafer chuck configured to hold onto a wafer structure. Further, a blade is arranged near an edge of the wafer chuck and configured to remove an edge potion of the wafer structure and to define a new sidewall of the wafer structure. A laser sensor apparatus is configured to direct a laser beam directed toward a top surface of the wafer chuck. The laser sensor apparatus is configured to measure a parameter of an analysis area of the wafer structure. Control circuitry is to the laser sensor apparatus and the blade. The control circuitry is configured to start a damage prevention process when the parameter deviates from a predetermined threshold value by at least a predetermined shift value.Type: GrantFiled: May 12, 2021Date of Patent: April 9, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuo-Ming Wu, Yung-Lung Lin, Hau-Yi Hsiao, Sheng-Chau Chen, Cheng-Yuan Tsai
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Publication number: 20240113071Abstract: An integrated circuit package including electrically floating metal lines and a method of forming are provided. The integrated circuit package may include integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure on the encapsulant, a first electrically floating metal line disposed on the redistribution structure, a first electrical component connected to the redistribution structure, and an underfill between the first electrical component and the redistribution structure. A first opening in the underfill may expose a top surface of the first electrically floating metal line.Type: ApplicationFiled: January 5, 2023Publication date: April 4, 2024Inventors: Chung-Shi Liu, Mao-Yen Chang, Yu-Chia Lai, Kuo-Lung Pan, Hao-Yi Tsai, Ching-Hua Hsieh, Hsiu-Jen Lin, Po-Yuan Teng, Cheng-Chieh Wu, Jen-Chun Liao
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Patent number: 11942543Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.Type: GrantFiled: June 29, 2022Date of Patent: March 26, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Chou Lin, Yi-Cheng Chiu, Karthick Murukesan, Yi-Min Chen, Shiuan-Jeng Lin, Wen-Chih Chiang, Chen-Chien Chang, Chih-Yuan Chan, Kuo-Ming Wu, Chun-Lin Tsai
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Publication number: 20240074329Abstract: The present invention provides a semiconductor device and a method of forming the same, and the semiconductor device includes a substrate, a first interconnect layer and a second interconnect layer. The first interconnect layer is disposed on the substrate, and the first interconnect layer includes a first dielectric layer around a plurality of first magnetic tunneling junction (MTJ) structures. The second interconnect layer is disposed on the first interconnect layer, and the second interconnect layer includes a second dielectric layer around a plurality of second MTJ structures, wherein, the second MTJ structures and the first MTJ structures are alternately arranged along a direction. The semiconductor device may obtain a reduced size of each bit cell under a permissible process window, so as to improve the integration of components.Type: ApplicationFiled: November 8, 2023Publication date: February 29, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Hsing Lee, Chun-Hsien Lin, Sheng-Yuan Hsueh
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Patent number: 11767976Abstract: The instant disclosure described a system and method to prevent the oxidizer overheating using cold side bypass for a VOCs treatment system with series rotor, which may be used in an organic waste air treatment system. The system is equipped with a Thermal Oxidizer (TO), a First Heat Exchanger, a Second Heat Exchanger, a third heat exchanger, a First Cold-Side Transporting Pipeline, a First Adsorption Rotor, a Second Adsorption Rotor, and a Chimney. There is a Cold-Side Proportional Damper installed between the First Desorption-Treated Air Pipeline and the First Cold-Side Transporting Pipeline, or it is installed on the First Desorption-Treated Air Pipeline. When the VOCs concentration becomes higher, the Cold-Side Proportional Damper can regulate the airflow to adjust the heat-recovery amount or concentration, when treating the organic waste air, it can prevent the TO from being overheated due to high oxidizer temperature, and protect it from Thermal Oxidizer shut-down.Type: GrantFiled: July 5, 2021Date of Patent: September 26, 2023Assignees: DESICCANT TECHNOLOGY CORPORATION, DESICCANT TECHNOLOGY(SHANGHAI) CORPORATIONInventors: Shih-Chih Cheng, Kuo-Yuan Lin, Ya-Ming Fu, Chung-Hsien Chen, Pang-Yu Liu
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Patent number: 11761626Abstract: A system and method to prevent the oxidizer overheating using cold side bypass during high input for a VOCs treatment system with series rotor are described, which may be used in an organic waste air treatment system. The system is equipped with a Thermal Oxidizer (TO), a First Heat Exchanger, a Second Heat Exchanger, a third heat exchanger, a Fourth Heat Exchanger, a First Cold-Side Transporting Pipeline, a Fourth Cold-Side Transporting Pipeline, a First Adsorption Rotor, a Second Adsorption Rotor, and a Chimney. There is a Cold-Side Proportional Damper installed between the First Desorption-Treated Air Pipeline and the First Cold-Side Transporting Pipeline, the First Desorption-Treated Air Pipeline and the Fourth Cold-Side Transporting Pipeline or between the First Cold-Side Transporting Pipeline and the Fourth Cold-Side Transporting Pipeline, or the damper is installed on the First Desorption-Treated Air Pipeline.Type: GrantFiled: June 16, 2021Date of Patent: September 19, 2023Assignees: DESICCANT TECHNOLOGY CORPORATION, DESICCANT TECHNOLOGY(SHANGHAI) CORPORATIONInventors: Shih-Chih Cheng, Kuo-Yuan Lin, Ya-Ming Fu, Chung-Hsien Chen, Pang-Yu Liu
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Publication number: 20230204207Abstract: The disclosure relates to preventing an oxidizer from overheating using cold side bypass during high input for a VOCs treatment system having a series rotor, which may be used in an organic waste air treatment system. The system includes a thermal oxidizer (TO), a first heat exchanger, a second heat exchanger, a third heat exchanger, a fourth heat exchanger, a first cold-side transporting pipeline, a fourth cold-side transporting pipeline, a first adsorption rotor, a second adsorption rotor, and a chimney. A cold-side proportional damper is installed between the first desorption-treated air pipeline and the first cold-side transporting pipeline, between the first desorption-treated air pipeline and the fourth cold-side transporting pipeline, or between the first cold-side transporting pipeline and the fourth cold-side transporting pipeline, or the damper is installed on the first desorption-treated air pipeline.Type: ApplicationFiled: February 17, 2023Publication date: June 29, 2023Inventors: Shih-Chih CHENG, Kuo-Yuan LIN, Ya-Ming FU, Chung-Hsien CHEN, Pang-Yu LIU
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Publication number: 20230122176Abstract: A system and method to prevent an oxidizer overheating using cold side bypass for a volatile organic compounds (VOCs) treatment system with a series rotor are described, which is mainly used in the organic waste air treatment system. The system is equipped with a thermal oxidizer (to), a first heat exchanger, a second heat exchanger, a third heat exchanger, a first cold-side transporting pipeline, a first adsorption rotor, a second adsorption rotor, and a chimney. A cold-side proportional damper is installed between the first desorption-treated air pipeline and the first cold-side transporting pipeline, or it is installed on the first desorption-treated air pipeline. When the VOCs concentration becomes higher, the cold-side proportional damper can regulate the airflow to adjust the heat-recovery amount or concentration, when treating the organic waste air, it can prevent the thermal oxidizer from being overheated due to high oxidizer temperature, and protect from thermal oxidizer shut-down.Type: ApplicationFiled: December 16, 2022Publication date: April 20, 2023Inventors: Shih-Chih CHENG, Kuo-Yuan LIN, Ya-Ming FU, Chung-Hsien CHEN, Pang-Yu LIU
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Publication number: 20220026062Abstract: The instant disclosure described a system and method to prevent the oxidizer overheating using cold side bypass for a VOCs treatment system with series rotor, which may be used in an organic waste air treatment system. The system is equipped with a Thermal Oxidizer (TO), a First Heat Exchanger, a Second Heat Exchanger, a third heat exchanger, a First Cold-Side Transporting Pipeline, a First Adsorption Rotor, a Second Adsorption Rotor, and a Chimney. There is a Cold-Side Proportional Damper installed between the First Desorption-Treated Air Pipeline and the First Cold-Side Transporting Pipeline, or it is installed on the First Desorption-Treated Air Pipeline. When the VOCs concentration becomes higher, the Cold-Side Proportional Damper can regulate the airflow to adjust the heat-recovery amount or concentration, when treating the organic waste air, it can prevent the TO from being overheated due to high oxidizer temperature, and protect it from Thermal Oxidizer shut-down.Type: ApplicationFiled: July 5, 2021Publication date: January 27, 2022Inventors: Shih-Chih CHENG, Kuo-Yuan LIN, Ya-Ming FU, Chung-Hsien CHEN, Pang-Yu LIU
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Publication number: 20220026063Abstract: A system and method to prevent the oxidizer overheating using cold side bypass during high input for a VOCs treatment system with series rotor are described, which may be used in an organic waste air treatment system. The system is equipped with a Thermal Oxidizer (TO), a First Heat Exchanger, a Second Heat Exchanger, a third heat exchanger, a Fourth Heat Exchanger, a First Cold-Side Transporting Pipeline, a Fourth Cold-Side Transporting Pipeline, a First Adsorption Rotor, a Second Adsorption Rotor, and a Chimney. There is a Cold-Side Proportional Damper installed between the First Desorption-Treated Air Pipeline and the First Cold-Side Transporting Pipeline, the First Desorption-Treated Air Pipeline and the Fourth Cold-Side Transporting Pipeline or between the First Cold-Side Transporting Pipeline and the Fourth Cold-Side Transporting Pipeline, or the damper is installed on the First Desorption-Treated Air Pipeline.Type: ApplicationFiled: June 16, 2021Publication date: January 27, 2022Inventors: Shih-Chih CHENG, Kuo-Yuan LIN, Ya-Ming FU, Chung-Hsien CHEN, Pang-Yu LIU
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Publication number: 20030006520Abstract: A method of making patterned artificial material marble/granite/solid surface material that makes artificial marble/granite/solid surface material with variable patterns by use of polymers. The polymers are combined with filler materials, an accelerating reagent or colorful material to compose basic materials and pattern materials in different colors. Molds with at least one pattern are used for curing of the basic materials and the pattern material to form the patterned artificial material and to make the artificial marble/granite/solid surface material integral.Type: ApplicationFiled: July 5, 2001Publication date: January 9, 2003Inventor: Kuo-Yuan Lin
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Patent number: D946569Type: GrantFiled: March 5, 2020Date of Patent: March 22, 2022Assignee: HANNSTAR DISPLAY CORPORATIONInventors: Ya-Hui Yang, Li-Fu Ho, Pei-I Hsu, Kuo-Yuan Lin