Abstract: A plasma engine includes a plasma source that generates ions from molecular gas species received at a gas input where at least some of the ions generated are atomic species ions. An ion extractor is configured to extract ions from the plasma source with an electric field. A housing comprising a recombination region receives ions extracted from the ion extractor. At least some of the atomic species ions recombine into molecular species in the housing, thereby releasing energy for thrust.

Abstract: A plasma engine includes a plasma source that generates ions from molecular gas species received at a gas input where at least some of the ions generated are atomic species ions. An ion extractor is configured to extract ions from the plasma source with an electric field. A housing comprising a recombination region receives ions extracted from the ion extractor. At least some of the atomic species ions recombine into molecular species in the housing, thereby releasing energy for thrust.

Abstract: A plasma engine includes a plasma source that generates ions from molecular gas species received at a gas input where at least some of the ions generated are atomic species ions. An ion extractor is configured to extract ions from the plasma source with an electric field. A housing comprising a recombination region receives ions extracted from the ion extractor. At least some of the atomic species ions recombine into molecular species in the housing, thereby releasing energy for thrust.

Abstract: Methods of fabricating electrical contacts on both sides of a thin membrane to form a millimeter wave, self-aligned, opposed gate-source transistor are disclosed. The transistor structure has a subhalf-micron gate, dual-drains placed symmetrically around both sides of the gate, and a source approximately half the length of the gate. The source is directly opposite, and centered under, the gate on the opposite surface of a semiconductor thin film. The gate electrode is fabricated on the first surface of the thin film using conventional single surface lithography, and is used as a conformed mask for the source lithography, thereby self-aligning the source to the gate. The source is formed by resonant dielectric lithography, wherein the gate side of the thin film is irradiated by collimated ultraviolet light to expose a negative resist on the source side with a resolution of less than a wavelength. Lateral diffraction effects affect the relative dimension of the source with respect to the gate.

Abstract: An improved two-dimensional semiconductor surface-emitting laser array is described in which two intra-cavity internal reflecting surfaces are formed at a 45.degree. angle to the plane of the active layer of the semiconductor laser so as to internally reflect light from each end of the active layer in a direction normal to the plane of the active layer with a buried reflective mirror provided in the path of one of said reflections, so as to transmit reflected light back through the laser and out the top surface of the array.

Abstract: Methods of fabricating electrical contacts on both sides of a thin membrane to form a millimeter wave, self-aligned, opposed gate-source transistor are disclosed. The transistor structure has a subhalf-micron gate, dual-drains placed symmetrically around both sides of the gate, and a source approximately half the length of the gate. The source is directly opposite, and centered under, the gate on the opposite surface of a semiconductor thin film. The gate electrode is fabricated on the first surface of the thin film using conventional single surface lithography, and is used as a conformed mask for the source lithography, thereby self-aligning the source to the gate. The source is formed by resonant dielectric lithography, wherein the gate side of the thin film is irradiated by collimated ultraviolet ligth to expose a negative resist on the source side with a resolution of less than a wavelength. Lateral diffraction effects affect the relative dimension of the source with respect to the gate.