Abstract: A novel bag for holding, transporting, and pouring a bulk product is provided. In one embodiment, the bag comprises a curved, perforated section at one corner. The section can be removed by tearing along the perforation, thus forming a spout for pouring the product from the bag. In another embodiment, the bag further comprises a second perforated section extending the majority of the way (and preferably the entire way) horizontally across the bag. In this embodiment, the bag could alternatively, or additionally, be opened by tearing along the second set of perforations and separating the resulting two sections of the bag. The bag is typically formed of plastic, and can be used for salt, animal food, and other pourable products.

Abstract: A novel bag for holding, transporting, and pouring a bulk product is provided. In one embodiment, the bag comprises a curved, perforated section at one corner. The section can be removed by tearing along the perforation, thus forming a spout for pouring the product from the bag. In another embodiment, the bag further comprises a second perforated section extending the majority of the way (and preferably the entire way) horizontally across the bag. In this embodiment, the bag could alternatively, or additionally, be opened by tearing along the second set of perforations and separating the resulting two sections of the bag. The bag is typically formed of plastic, and can be used for salt, animal food, and other pourable products.

Abstract: A silicon layer formed atop a sapphire substrate is selectively recrystallized such that the original degraded quality of the crystallinity of an N-well region where a P-channel device is to be formed is enhanced, so that leakage in the P-channel device is reduced, while the high ultraviolet reflectance number of a P-well region where an N-channel device resides remains unaffected. The process according to the present invention involves implanting silicon into only that portion of the silicon layer where an N-conductivity well region for a P-channel device is to be formed. An N-conductivity type impurity is introduced into the silicon-implanted portion of the silicon layer, to form the N-conductivity well region. The structure is then annealed at a relatively low temperature for several minutes, which is sufficient to activate the phosphorus and to cause local recrystallization of the N-well region of the silicon layer, without essentially causing a redistribution of the phosphorus.

Abstract: A preamorphized silicon layer formed atop a sapphire substrate is selectively recrystallized such that the original degraded quality of the crystallinity of an N-well region where a P-channel device is to be formed is enhanced, so that leakage in the P-channel device is reduced, while the high UVR number of a P-well region where an N-channel device resides remains unaffected. The process according to the present invention involves implanting a recrystallization-inducing element, such as silicon, into only that portion of the preamorphized silicon layer where an N-conductivity well region for a P-channel device is to be formed. An N-conductivity type impurity is introduced into the silicon-implanted portion of the preamorphized silicon layer, to form the N-conductivity well region.