Abstract: A method of making a semiconductor memory device wherein a storage node having a plurality of pillars, capable of increasing the storage node surface area and thus the cell capacitance. The storage node is formed by depositing a storage node polysilicon film to have a thickness of 5,000 .ANG. to 6,000 .ANG. over a semiconductor substrate, forming a photoresist pattern over the polysilicon film in a direct electron beam writing manner, and etching the polysilicon film up to a depth of 1,000 .ANG. from the upper surfaces of a gate and a bit line by using the photoresist pattern. The formed storage node has a plurality of uniformly spaced pillars.

Abstract: A device for controlling fermentation and ensilagation of food for use with an apparatus for fermenting and ensilaging is disclosed. The device comprising a key input unit manually controlled by a user so as to set the rate of fermentation and the ripeness stage. A microprocessor controls the respective units in accordance with a preset program and in response to signals representing the present rate of fermentation and ripeness setting provided by the key input unit. A load control unit controls a heating unit and a cooling unit in response to a control signal applied thereto from the microprocessor and representing the present rate of fermentation and the ripeness stage. A temperature detecting unit detects the present temperature inside an ensilaging container and outputs a signal representing the detected temperature to the microprocessor.