Abstract: A compressor including: a casing; a rotary shaft rotatably mounted in the casing; a compression mechanism configured to compress a refrigerant by operating in conjunction with the rotary shaft; a thrust plate configured to support an end surface of the rotary shaft; a chamber configured to accommodate the thrust plate; and a slit configured to guide oil to the chamber, in which a part of the slit is formed to face a contact portion between the rotary shaft and the thrust plate, such that it is possible to supply the oil between the rotary shaft and the thrust plate, thereby preventing damage to the thrust plate for supporting the rotary shaft. In addition, an inner diameter of the chamber gradually increases, and the chamber extends to an end surface of a cylinder block, such that the cylinder block may be easily extracted from a mold.

Abstract: An apparatus and a method for performing a chemical vapor deposition process that reduces particle contamination of a wafer, wherein a cleaning gas including a fluorine radical is introduced into the process chamber to clean the chamber. After loading a wafer in the process chamber, a deposition gas is introduced into the chamber to form a film on the wafer. An inert gas as a back flow-preventing gas is introduced into the process chamber through a cleaning gas supply line to prevent the deposition gas from flowing back toward the cleaning gas supply line. Thus, the cleaning gas supply line is prevented from being contaminated by the deposition gas and particle formation on the wafer during deposition of the film is reduced, so that yield and reliability of the semiconductor device may be improved.

Abstract: An apparatus and a method for performing a chemical vapor deposition process that reduces particle contamination of a wafer, wherein a cleaning gas including a fluorine radical is introduced into the process chamber to clean the chamber. After loading a wafer in the process chamber, a deposition gas is introduced into the chamber to form a film on the wafer. An inert gas as a back flow-preventing gas is introduced into the process chamber through a cleaning gas supply line to prevent the deposition gas from flowing back toward the cleaning gas supply line. Thus, the cleaning gas supply line is prevented from being contaminated by the deposition gas and particle formation on the wafer during deposition of the film is reduced, so that yield and reliability of the semiconductor device may be improved.