Abstract: A semiconductor element includes a substrate, a gate electrode, an active layer, a contact layer, a first electrode, and a second electrode. The gate electrode is disposed on the substrate. The gate insulation layer is disposed on the gate electrode. The active layer is disposed on the gate insulation layer, and includes a first end portion and a second end portion that is opposite the first end portion. The contact layer overlaps the second end portion of the active layer. The first electrode is in contact with the first end portion. The second electrode is spaced apart from the first electrode, and is in contact with the contact layer.

Abstract: A tube connector includes a flexible member that engages an inserted length of tubing. The flexible member is configured to adhere to the tubing in the presence of an applied solvent, thereby forming a hermetic seal.

Abstract: A method for manufacturing a plurality of filter assemblies is provided that includes providing first and second housing sheets and positioning a filtration medium therebetween. Heat and pressure are applied to form first, second, and peripheral seals of at least two filter assemblies at the same time. Each second seal is positioned outboard of the associated first seal with a non-seal area therebetween, while each peripheral seal is positioned outboard of the associated second seal. The first seal commingles the housing sheets and the filtration medium, while the peripheral seal and the periphery of the second seal commingle only the housing sheets. The peripheral seal may include a tear seal to enable separation of a plurality of adjacent filter assemblies.

Abstract: The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %.

Abstract: A semiconductor element includes a substrate, a gate electrode, an active layer, a contact layer, a first electrode, and a second electrode. The gate electrode is disposed on the substrate. The gate insulation layer is disposed on the gate electrode. The active layer is disposed on the gate insulation layer, and includes a first end portion and a second end portion that is opposite the first end portion. The contact layer overlaps the second end portion of the active layer. The first electrode is in contact with the first end portion. The second electrode is spaced apart from the first electrode, and is in contact with the contact layer.

Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT.

Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT.

Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

Abstract: The present invention relates to an iontophoresis patch integrated with a battery, more specifically to an iontophoresis patch integrated with a battery which adopts the principle of iontophoresis as a means for infiltrating a substance of interest such as a medication or a cosmetic substance into skin.

Abstract: A pressure sensor has a housing, a movable member and a vision sensor. The housing has an aperture configured to receive a fluid. The movable member is disposed in the housing and configured to move in response to a pressure of the fluid. The vision sensor is configured to detect the movement of the movable member.

Abstract: A system is provided comprising first and second parts that are brought together for each occasion the system is used. The first part comprises a label having a plurality of discrete magnetic portions arranged in a predetermined pattern unique to the first part, and the second part comprises a magnetic reader for identifying the magnetic pattern on the first part and generating a signal indicative of the pattern. The second part also includes a programmable controller configured to receive signals from the reader to confirm the identity of the first part and permit further operation of the system upon a positive identification of the first part.

Abstract: A container having multiple compartments formed by frangible seals in the interior chamber of the container is disclosed. The container comprises an indicator adapted to provide an indication that a seal breach between the chambers has occurred. Methods of forming a container having a seal breach detection indicator are also disclosed.

Abstract: A thin film transistor includes a gate electrode provided on a substrate, a semiconductor layer insulated from the gate electrode and including indium, tin, zinc and gallium oxide, and source/drain electrodes formed on the semiconductor layer.

Abstract: An apparatus having a thin film battery includes: a device electrically operating and including a substrate; and the thin film battery for supplying power to the device.

Abstract: According to an aspect of the present invention, there is provided a back plane for a flat-panel display device and a method of manufacturing the same. The back plane including: a substrate; a gate electrode on the substrate; a first insulation layer on the substrate and covering the gate electrode; a semiconductor layer on the first insulation layer and corresponding to the gate electrode; and a source electrode and a drain electrode on the semiconductor layer and electrically coupled to respective portions of the semiconductor layer. Here, the semiconductor layer includes indium, tin, zinc, and gallium, and an atomic concentration of the gallium is from about 5% to about 15%.

Abstract: A system is provided comprising first and second parts that are brought together for each occasion the system is used. The first part comprises a label having a plurality of discrete magnetic portions arranged in a predetermined pattern unique to the first part, and the second part comprises a magnetic reader for identifying the magnetic pattern on the first part and generating a signal indicative of the pattern. The second part also includes a programmable controller configured to receive signals from the reader to confirm the identity of the first part and permit further operation of the system upon a positive identification of the first part.

Abstract: The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %.

Abstract: In one aspect, a back plane for a flat panel display apparatus include: a substrate; a source electrode and a drain electrode formed on the substrate; a capacitor bottom electrode formed on a same layer as the source/drain electrodes; an active layer formed on the substrate in correspondence to the source electrode and the drain electrode; a blocking layer interposed between the source electrode and the drain electrode and the active layer; a first insulation layer formed on the substrate to cover the active layer; a gate electrode formed on the first insulation layer in correspondence to the active layer; a capacitor top electrode formed on a same layer as the gate electrode in correspondence to the capacitor bottom electrode; and a second insulation layer formed on the first insulation layer to cover the gate electrode and the capacitor top electrode is provided.

Abstract: A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

Abstract: A thin film transistor includes a gate electrode having a first length measured in a first direction and a first width measured in a second direction, an active layer having a second length measured in the first direction and a second width measured in the second direction, the second length of the active layer being greater than the first length of the gate electrode, and the second width of the active layer being greater than the first width of the gate electrode, and a source electrode and a drain electrode that are connected to the active layer, wherein at least one of opposite side edges of the gate electrode extending in the first direction is spaced apart from a corresponding opposite side edge of the active layer extending in the first direction.