Abstract: The present application relates to the technical field of road infrastructure, and provides a cement-based pervious pavement structure, a manufacturing method of the cement-based pervious pavement structure, and an application of the cement-based pervious pavement structure. The cement-based pervious pavement structure includes: a lower structural layer as the base; an upper surfacing layer overlaid on said lower structural layer and including: 1.0-2.0 parts by weight of upper layer (fine) aggregate; 0.40-0.70 part by weight of cement; 0.02-0.03 part by weight of titanium dioxide; 0.03-0.04 part by weight of water reducing agent; 0.001-0.002 part by weight of defoamer. The cement-based pervious pavement structure provided by the present application can provide air purification function taking into account the practical cost.

Abstract: An efficient electronics package comprising an integrated circuit, a transistor case packaging, a power supply, an actuation segment and a sensor segment, wherein engagement of the integrated circuit causes the actuation segment to be activated. The integrated circuit may be engaged, for example, by a level-hold trigger or the sensor segment.

Abstract: An efficient electronics package comprising an integrated circuit, a transistor case packaging, a power supply, an actuation segment and a sensor segment, wherein engagement of the integrated circuit causes the actuation segment to be activated. The integrated circuit may be engaged, for example, by a level-hold trigger or the sensor segment.

Abstract: A method and apparatus for pressurizing a fillable-structure, wherein a space defined by the pump, an untraversed plunger, and a closure is a volume, Vt, and a stop to limit the travel of the plunger along the pump so a volume, Vb, remains within the space defined by the pump, the fully traversed plunger, and the closure. Traversal or manipulation of the plunger expresses gas from the pump to the Tillable-structure wherein the pressurization of the fillable-structure is limited by the ratio of Vt to Vb whereby the fillable-structure can not be pressurized beyond a pressure Pmax.

Abstract: A physical vapor deposition sputtering process for enhancing the <0002> preferred orientation of a titanium layer uses hydrogen before or during the deposition process. Using the oriented titanium layer as a base layer for a titanium, titanium nitride, aluminum interconnect stack results in formation of an aluminum layer with predominant <111> crystallographic orientation which provides enhanced resistance to electromigration. In one process, a mixture of an inert gas, usually argon, and hydrogen is used as the sputtering gas for PVD deposition of titanium in place of pure argon. Alternatively, titanium is deposited in a two-step process in which an initial burst of hydrogen is introduced into the reaction chamber in a separate, first step. Pure argon is used as the sputtering gas for the titanium deposition in a second step. The method is broadly applicable to the deposition of metallization layers.