Abstract: Methods and systems for design based sampling and binning for yield critical defects are provided. One method includes aligning each image patch in each inspection image frame generated for a wafer by an optical subsystem of an inspection system to design information for the wafer. The method also includes deriving multiple layer design attributes at locations of defects detected in the image patches. In addition, the method includes building a decision tree with the multiple layer design attributes. The decision tree is used to separate the defects into bins with different yield impacts on a device being formed on the wafer. The method also includes binning the defects with the decision tree.

Abstract: Methods and systems for design based sampling and binning for yield critical defects are provided. One method includes aligning each image patch in each inspection image frame generated for a wafer by an optical subsystem of an inspection system to design information for the wafer. The method also includes deriving multiple layer design attributes at locations of defects detected in the image patches. In addition, the method includes building a decision tree with the multiple layer design attributes. The decision tree is used to separate the defects into bins with different yield impacts on a device being formed on the wafer. The method also includes binning the defects with the decision tree.

Abstract: Methods and systems for design based sampling and binning for yield critical defects are provided. One method includes aligning each image patch in each inspection image frame generated for a wafer by an optical subsystem of an inspection system to design information for the wafer. The method also includes deriving multiple layer design attributes at locations of defects detected in the image patches. In addition, the method includes building a decision tree with the multiple layer design attributes. The decision tree is used to separate the defects into bins with different yield impacts on a device being formed on the wafer. The method also includes binning the defects with the decision tree.

Abstract: Methods and systems for design based sampling and binning for yield critical defects are provided. One method includes aligning each image patch in each inspection image frame generated for a wafer by an optical subsystem of an inspection system to design information for the wafer. The method also includes deriving multiple layer design attributes at locations of defects detected in the image patches. In addition, the method includes building a decision tree with the multiple layer design attributes. The decision tree is used to separate the defects into bins with different yield impacts on a device being formed on the wafer. The method also includes binning the defects with the decision tree.

Abstract: Methods and systems for design based sampling and binning for yield critical defects are provided. One method includes aligning each image patch in each inspection image frame generated for a wafer by an optical subsystem of an inspection system to design information for the wafer. The method also includes deriving multiple layer design attributes at locations of defects detected in the image patches. In addition, the method includes building a decision tree with the multiple layer design attributes. The decision tree is used to separate the defects into bins with different yield impacts on a device being formed on the wafer. The method also includes binning the defects with the decision tree.

Abstract: A hydrogen sensor and/or switch fabricated from an array of nanowires or a nanoparticle thick film composed of metal or metal alloys. The sensor and/or switch demonstrates a wide operating temperature range and shortened response time due to fabrication materials and methods. The nanowires or nanoparticle thick films demonstrate an increase in conductivity in the presence of hydrogen.

Abstract: A hydrogen sensor and/or switch fabricated from an array of nanowires or a nanoparticle thick film composed of metal or metal alloys. The sensor and/or switch demonstrates a wide operating temperature range and shortened response time due to fabrication materials and methods. The nanowires or nanoparticle thick films demonstrate an increase in conductivity in the presence of hydrogen.

Abstract: A memory cell (110) has a plurality of floating gates (120L, 120R). The channel region (170) comprises a plurality of sub-regions (220L, 220R) adjacent to the respective floating gates, and a connection region (210) between the floating gates. The connection region has the same conductivity type as the source/drain regions (160) to increase the channel conductivity. Therefore, the floating gates can be brought closer together even though the inter-gate dielectric (144) becomes thick between the floating gates, weakening the control gate's (104) electrical field in the channel.

Abstract: The present invention provides for variable-range hydrogen sensors and methods for making same. Such variable-range hydrogen sensors comprise a series of fabricated Pd—Ag (palladium-silver) nanowires—each wire of the series having a different Ag to Pd ratio—with nanobreakjunctions in them and wherein the nanowires have predefined dimensions and orientation. When the nanowires are exposed to H2, their lattice swells when the H2 concentration reaches a threshold value (unique to that particular ratio of Pd to Ag). This causes the nanobreakjunctions to close leading to a 6-8 orders of magnitude decrease in the resistance along the length of the wire and providing a sensing mechanism for a range of hydrogen concentrations.

Abstract: The present invention provides for variable-range hydrogen sensors and methods for making same. Such variable-range hydrogen sensors comprise a series of fabricated Pd—Ag (palladium-silver) nanowires—each wire of the series having a different Ag to Pd ratio—with nanobreakjunctions in them and wherein the nanowires have predefined dimensions and orientation. When the nanowires are exposed to H2, their lattace swells when the H2 concentration reaches a threshold value (unique to that particular ratio of Pd to Ag). This causes the nanobreakjunctions to close leading to a 6-8 orders of magnitude decrease in the resistance along the length of the wire and providing a sensing mechanism for a range of hydrogen concentrations.

Abstract: A hydrogen sensor and/or switch fabricated from an array of nanowires or a nanoparticle thick film composed of metal or metal alloys. The sensor and/or switch demonstrates a wide operating temperature range and shortened response time due to fabrication materials and methods. The nanowires or nanoparticle thick films demonstrate an increase in conductivity in the presence of hydrogen.

Abstract: The present invention provides for novel hydrogen sensors and methods for making same. In some embodiments, such novel hydrogen sensors are continuous-range hydrogen sensors comprising Pd—Ag nanoparticles arrayed as nanowires or two-dimensional shapes on a resistive surface. Such continuous-range hydrogen sensors are capable of measuring a wide range of hydrogen gas concentration over a wide temperature range. Unlike existing hydrogen sensors that experience a large change in resistance at a certain hydrogen concentration, the continuous-range hydrogen sensor of the present invention changes resistance continuously over a broad range of hydrogen concentration. This continuous change varies slowly with hydrogen concentration and is predictable such that the continuous-range hydrogen sensor can be used to measure hydrogen concentration continuously from a few ppm to 40,000 ppm level or higher over a broad range of temperatures (e.g., ?40° C. to +150° C.).

Abstract: A memory cell (110) has a plurality of floating gates (120L, 120R). The channel region (170) comprises a plurality of sub-regions (220L, 220R) adjacent to the respective floating gates, and a connection region (210) between the floating gates. The connection region has the same conductivity type as the source/drain regions (160) to increase the channel conductivity. Therefore, the floating gates can be brought closer together even though the inter-gate dielectric (144) becomes thick between the floating gates, weakening the control gate's (104) electrical field in the channel.

Abstract: A field effect transistor configured for use in high power applications and a method for its fabrication is disclosed. The field effect transistor is formed of III-V materials and is configured to have a breakdown voltage that is advantageous for high power applications. The field effect transistor is so configured by determining the operating voltage and the desired breakdown voltage for that operating voltage. A peak electric field is then identified that is associated with the operating voltage and desired breakdown voltage. The device is then configured to exhibit the identified peak electric field at that operating voltage. The device is so configured by selecting device features that control the electrical potential in the device drift region is achieved. These features include the use of an overlapping gate or field plate in conjunction with a barrier layer overlying the device channel, or a p-type pocket formed in a region of single-crystal III-V material formed under the device channel.

Abstract: The present invention provides for variable-range hydrogen sensors and methods for making same. Such variable-range hydrogen sensors comprise a series of fabricated Pd—Ag (palladium-silver) nanowires—each wire of the series having a different Ag to Pd ratio—with nanobreakjunctions in them and wherein the nanowires have predefined dimensions and orientation. When the nanowires are exposed to H2, their lattace swells when the H2 concentration reaches a threshold value (unique to that particular ratio of Pd to Ag). This causes the nanobreakjunctions to close leading to a 6–8 orders of magnitude decrease in the resistance along the length of the wire and providing a sensing mechanism for a range of hydrogen concentrations.

Abstract: A gasket (10) is provided for an evacuation head assembly (20) to evacuate a chamber (104) defined by two glass sheets (101, 102). The gasket (10) may be made from a metal foil such as aluminium and has opposite sealing surfaces (14, 15, 19) that are profiled with a series of fine grooves (17) and wherein the variation in thickness between the sealing surfaces is less than 1 ?m.

Abstract: A field effect transistor configured for use in high power applications and a method for its fabrication is disclosed. The field effect transistor is formed of III-V materials and is configured to have a breakdown voltage that is advantageous for high power applications. The field effect transistor is so configured by determining the operating voltage and the desired breakdown voltage for that operating voltage. A peak electric field is then identified that is associated with the operating voltage and desired breakdown voltage. The device is then configured to exhibit the identified peak electric field at that operating voltage. The device is so configured by selecting device features that control the electrical potential in the device drift region is achieved. These features include the use of an overlapping gate or field plate in conjunction with a barrier layer overlying the device channel, or a p-type pocket formed in a region of single-crystal III-V material formed under the device channel.

Abstract: The present invention provides for novel hydrogen sensors and methods for making same. In some embodiments, such novel hydrogen sensors are continuous-range hydrogen sensors comprising Pd—Ag nanoparticles arrayed as nanowires or two-dimensional shapes on a resistive surface. Such continuous-range hydrogen sensors are capable of measuring a wide range of hydrogen gas concentration over a wide temperature range. Unlike existing hydrogen sensors that experience a large change in resistance at a certain hydrogen concentration, the continuous-range hydrogen sensor of the present invention changes resistance continuously over a broad range of hydrogen concentration. This continuous change varies slowly with hydrogen concentration and is predictable such that the continuous-range hydrogen sensor can be used to measure hydrogen concentration continuously from a few ppm to 40,000 ppm level or higher over a broad range of temperatures (e.g., ?40° C. to +150° C.).

Abstract: A key holder comprising a key ring made of steel wire stock employs a holder body with an annular locking member. The locking member employs a groove for receiving a connector of the key ring and a spring and a steel ball.

Abstract: The present invention provides for variable-range hydrogen sensors and methods for making same. Such variable-range hydrogen sensors comprise a series of fabricated Pd—Ag (palladium-silver) nanowires—each wire of the series having a different Ag to Pd ratio—with nanobreakjunctions in them and wherein the nanowires have predefined dimensions and orientation. When the nanowires are exposed to H2, their lattace swells when the H2 concentration reaches a threshold value (unique to that particular ratio of Pd to Ag). This causes the nanobreakjunctions to close leading to a 6-8 orders of magnitude decrease in the resistance along the length of the wire and providing a sensing mechanism for a range of hydrogen concentrations.