Abstract: The present invention relates to: a pyrene derivative compound having a specific structure; and a high efficiency organic light-emitting device employing the pyrene derivative compound in a light emitting layer and thus having excellent light-emitting characteristics. The organic light-emitting device according to the present invention can be configured as a high efficiency organic light-emitting device having excellent light-emitting characteristics by employing the pyrene derivative compound having the specific structure as a host in the light emitting layer, and thus can be usefully applied industrially in lighting devices, as well as various display devices such as flat, flexible, and wearable displays.

Abstract: Disclosed herein are an apparatus and method for providing sensor data in a sensor device based on a blockchain. A method for providing sensor data in a sensor device based on a blockchain may include creating a device record using encrypted device identification information, registering the device record in the blockchain, creating an event record using event information collected from a sensor, registering the header of the event record, including information about a link to the device record, in the blockchain, and distributing the body of the event record, the body being linked to the header of the event record.

Abstract: An organic light-emitting device according to the present invention uses a pyrene derivative compound having a characteristic structure as a host in a light-emitting layer to realize a long-lifespan and high-efficiency organic light-emitting device having excellent light-emitting characteristics in terms of lifespan and luminescence efficiency. Accordingly, the organic light-emitting device can be usefully applied, in the industrial aspect, for various display devices such as flat panel, flexible, and wearable displays, as well as lighting devices.

Abstract: In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.

Abstract: The present disclosure relates to a boron compound useful in an organic light-emitting diode and an organic light-emitting diode comprising same and, more particularly, to a boron compound represented by any one of [Chemical Formula A], wherein [Chemical Formula A] is as defined in the description.

Abstract: The present invention relates to a novel heterocyclic compound usable in an organic light-emitting device and to an organic light-emitting device comprising same, wherein [chemical formula A] is as described in the detailed description of the invention.

Abstract: Disclosed is a polycyclic aromatic compound that can be employed in an organic layer of an organic electroluminescent device. Also disclosed is a highly efficient organic electroluminescent device including the polycyclic aromatic compound. The use of the polycyclic aromatic compound significantly improves the luminous efficiency of the device.

Abstract: Disclosed are an apparatus and a method for Internet of Things (IoT) device security. The method includes unifying a port in a first IoT device for communication, receiving, by the first IoT device, a packet from a second IoT device through the port, identifying whether the packet in the first IoT device is in a preset packet form, verifying content of the packet in the first IoT device when the packet is in the preset packet form, and opening the port for providing a service in the first IoT device when the verifying of the packet content is successful.

Abstract: A method of providing information for predicting the prognosis of breast reconstruction surgery and a system for predicting the prognosis of breast reconstruction surgery is provided. By using the method or system for providing information for predicting the prognosis of breast reconstruction surgery according to one specific example of the present invention, it is possible to predict the possibility of implant rupture in a subject who has undergone or is scheduled to undergo two-stage breast reconstruction surgery, and it is possible to prepare an appropriate treatment according to this prediction, and to adjust the interval between breast reconstruction surgeries so as to lower the possibility of implant rupture. In addition, it is possible to provide information so that an implant with a low possibility of rupture may be selected.

Abstract: A method of providing information to predict the prognosis of breast reconstruction surgery and a system for predicting the prognosis of breast reconstruction surgery is provided. By using a method or system for providing information to predict the prognosis of breast reconstruction surgery according to one specific example, it is possible to predict the occurrence of complications in a subject into which a tissue expander is inserted or scheduled to be inserted during a process of breast reconstruction surgery and to prepare appropriate treatment for the subject, and it is possible to provide information to aid in selecting a type of tissue expander with a low possibility of complication occurrence.

Abstract: A method for recovering ashing rate in a plasma processing chamber includes positioning a substrate in a processing volume of a processing chamber, wherein the substrate has a silicon chloride residue formed thereon. The method further includes evaporating the silicon chloride residue from the substrate. The method further includes depositing the evaporated silicon chloride on one or more interior surfaces in the processing volume. The method further includes exposing the deposited silicon chloride to an oxidizing environment to convert the deposited silicon chloride to a silicon oxide passivation layer.

Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

Abstract: An inductively-coupled plasma processing chamber has a chamber with a ceiling. A first and second antenna are placed adjacent to the ceiling. The first antenna is concentric to the second antenna. A plasma source power supply is coupled to the first and second antenna. The plasma source power supply generates a first RF power to the first antenna, and a second RF power to the second antenna. A substrate support disposed within the chamber. The size of the first antenna and a distance between the substrate support are such that the etch rate of the substrate on the substrate support is substantially uniform.

Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

Abstract: A pulsed plasma system with pulsed reaction gas replenish for etching semiconductor structures is described. In an embodiment, a portion of a sample is removed by applying a pulsed plasma etch process. The pulsed plasma etch process comprises a plurality of duty cycles, wherein each duty cycle represents the combination of an ON state and an OFF state of a plasma. The plasma is generated from a reaction gas, wherein the reaction gas is replenished during the OFF state of the plasma, but not during the ON state. In another embodiment, a first portion of a sample is removed by applying a continuous plasma etch process. The continuous plasma etch process is then terminated and a second portion of the sample is removed by applying a pulsed plasma etch process having pulsed reaction gas replenish.

Abstract: A method of plasma etching tungsten silicide over polysilicon particularly useful in fabricating flash memory having both a densely packed area and an open (iso) area requiring a long over etch due to microloading. Wafer biasing is decreased in the over etch. The principal etchant include NF3 and Cl2. Argon is added to prevent undercutting at the dense/iso interface. Oxygen and nitrogen oxidize any exposed silicon to increase etch selectivity and straightens the etch profile. SiCl4 may be added for additional selectivity.