Patents by Inventor KYEONGILL YOON

KYEONGILL YOON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Protruding gate transistor and method of producing same
    Patent number: 11349034
    Abstract: A structure of a protruding gate transistor is disclosed. The protruding gate transistor comprising a substrate, a source region, a drain region, a channel extension anchor, a channel layer, and gate structure. The gate structure comprising a gate insulator layer, and a gate conductor layer. The channel layer is formed to be protruding from the substrate to extend the length of the channel of the protruding gate transistor and alleviate from channel length modulation.
    Type: Grant
    Filed: November 11, 2019
    Date of Patent: May 31, 2022
    Assignee: XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
    Inventors: Kyeongill Yoon, Yongchul Oh
  • PROTRUDING GATE TRANSISTOR AND METHOD OF PRODUCING SAME
    Publication number: 20210143283
    Abstract: A structure of a protruding gate transistor is disclosed. The protruding gate transistor comprising a substrate, a source region, a drain region, a channel extension anchor, a channel layer, and gate structure. The gate structure comprising a gate insulator layer, and a gate conductor layer. The channel layer is formed to be protruding from the substrate to extend the length of the channel of the protruding gate transistor and alleviate from channel length modulation.
    Type: Application
    Filed: November 11, 2019
    Publication date: May 13, 2021
    Inventors: KYEONGILL YOON, YONGCHUL OH
  • SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF
    Publication number: 20200220013
    Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a first source/drain region and a second source/drain region formed below the top surface of the substrate and a gate structure disposed between the first source/drain region and the second source/drain region. The first source/drain region are formed to have a size greater than a size of the second source/drain region.
    Type: Application
    Filed: November 11, 2019
    Publication date: July 9, 2020
    Inventors: KYEONGILL YOON, YONGCHUL OH