Abstract: A drive belt includes a foamed undercord layer having void spaces located throughout the foamed undercord layer. The void spaces extend from a backing layer of the undercord layer to an exterior surface of the backing layer, and may include some void spaces at the exterior surface that are open to the external environment. The foamed undercord layer may exhibit a 20% reduction in specific gravity as compared to an unfoamed version of the undercord layer. The manufacturing process for making the foamed undercord layer can include incorporating foaming agent in the undercord layer such that the undercord layer both foams and cures when heat and pressure are applied to the undercord layer. The foamed drive belt incorporating the foamed undercord layer may exhibit reduced bending stiffness and improved energy efficiency.

Abstract: A drive belt includes an undercord layer having a first region proximate a backing layer surface of the undercord layer and a second region proximate the exterior surface of the undercord layer, the first region being foamed and the second region either being foamed to a lesser extent than the first region or not being foamed. The drive belt further includes a cover layer formed over the exterior surface of the undercord layer. Alternatively, the drive belt may be foamed throughout the undercord layer thickness, with a cover layer formed on the exterior surface of the undercord layer. The manufacturing process for making the foamed undercord layer can include incorporating a first quantity of foaming agent in a first sheet of undercord layer material and either a second quantity of foaming agent in a second sheet of undercord layer material, the second quantity being less than the first quantity, or including no foaming agent in the second sheet.

Abstract: A self-aligning power transmission belt, which may be used in conjunction with a corresponding sprocket, and systems incorporating the self-aligning power transmission belt are described. The self-aligning belt includes a tooth configuration that can eliminate tracking error in belt applications. In some configurations, the self-aligning belt includes two or more rows of teeth, with the teeth in one row being offset from the teeth in a second row.

Abstract: Belt systems, such as toothed systems, having a belt and a wheel (e.g., a pulley, gear, sprocket, etc.) that have the fit of the wheel optimized for the fit of the belt, and vice versa. The systems utilize combined techniques and materials to create a belt and wheel interface that improves and even maximizes performance by increasing the efficient transfer of power between belt and wheel, and by distributing the forces across multiple teeth of the wheel. A coating on the wheel can be used to modify the pitch of the wheel.

Abstract: Endless belts, such as for use with e-bikes and other personal mobility systems such as standard bicycles, wheelchairs, scooters including electric scooters, and other systems that utilize a belt for transmitting power to impart motion to the system. The belts are particularly suited for inhibiting “tooth jumping” during use, having a curvature coefficient of no more than 0.01%, and in some embodiments less than 0.005%, with a compressibility coefficient of no more than 0.00075. The belts can utilize reinforcing cords, such as carbon cords, which when incorporated into the final belt, some cords have an open porosity of 10 vol-% or less, in some embodiments 5 vol-% or less.

Abstract: Described herein are embodiments of a pressure hose having an improved reinforcement layer. In some embodiments, the reinforcement layer of the pressure hose has a reinforcement volumetric ratio (RVR) of greater than or equal to 110%. The reinforcement layer can include a plurality of braided beams, with each beam comprising a plurality of ends. In some embodiments, the plurality of ends within a beam are arranged in a multi-layer orientation. In some embodiments, the number of ends and the end orientation within each beam is identical amongst all beams in the reinforcement layer. The shape, size, and arrangement of the ends within a beam can all be adjusted to increase the surface area to volume ratio and, correspondingly, the RVR of the reinforcement layer.

Abstract: A high efficiency belt having reduced bending stiffness while maintaining a high coefficient of friction. The belt includes a backing layer, a rib material layer, and cords embedded within, wherein the coefficient of friction of the high efficiency belt is greater than or equal to 0.03 mm/N times the bending stiffness for belts having a thickness in the range of from 2.6 mm to 4.2 mm. The belt can include a bending stiffness in the range of from about 30 N/mm to about 65 N/mm and an anisotropic modulus of elasticity ratio of between 1.1 and 5.0. Methods of manufacturing the high efficiency belt are also described and can include forming sheets of rib material with parallel aligned reinforcement fibers transverse to the direction of rotation of the high efficiency belt.

Abstract: Described herein are embodiments of a pressure hose having an improved reinforcement layer. In some embodiments, the reinforcement layer of the pressure hose has a reinforcement volumetric ratio (RVR) of greater than or equal to 110%. The reinforcement layer can include a plurality of braided beams, with each beam comprising a plurality of ends. In some embodiments, the plurality of ends within a beam are arranged in a multi-layer orientation. In some embodiments, the number of ends and the end orientation within each beam is identical amongst all beams in the reinforcement layer. The shape, size, and arrangement of the ends within a beam can all be adjusted to increase the surface area to volume ratio and, correspondingly, the RVR of the reinforcement layer.

Abstract: A high efficiency belt having reduced bending stiffness while maintaining a high coefficient of friction. The belt includes a backing layer, a rib material layer, and cords embedded within, wherein the coefficient of friction of the high efficiency belt is greater than or equal to 0.03 mm/N times the bending stiffness for belts having a thickness in the range of from 2.6 mm to 4.2 mm. The belt can include a bending stiffness in the range of from about 30 N/mm to about 65 N/mm and an anisotropic modulus of elasticity ratio of between 1.1 and 5.0. Methods of manufacturing the high efficiency belt are also described and can include forming sheets of rib material with parallel aligned reinforcement fibers transverse to the direction of rotation of the high efficiency belt.

Abstract: Described herein are embodiments of a pressure hose having an improved reinforcement layer. In some embodiments, the reinforcement layer of the pressure hose has a reinforcement volumetric ratio (RVR) of greater than or equal to 110%. The reinforcement layer can include a plurality of braided beams, with each beam comprising a plurality of ends. In some embodiments, the plurality of ends within a beam are arranged in a multi-layer orientation. In some embodiments, the number of ends and the end orientation within each beam is identical amongst all beams in the reinforcement layer. The shape, size, and arrangement of the ends within a beam can all be adjusted to increase the surface area to volume ratio and, correspondingly, the RVR of the reinforcement layer.

Abstract: A high efficiency belt having reduced bending stiffness while maintaining a high coefficient of friction. The belt includes a backing layer, a rib material layer, and cords embedded within, wherein the coefficient of friction of the high efficiency belt is greater than or equal to 0.03 mm/N times the bending stiffness for belts having a thickness in the range of from 2.6 mm to 4.2 mm. The belt can include a bending stiffness in the range of from about 30 N/mm to about 65 N/mm and an anisotropic modulus of elasticity ratio of between 1.1 and 5.0. Methods of manufacturing the high efficiency belt are also described and can include forming sheets of rib material with parallel aligned reinforcement fibers transverse to the direction of rotation of the high efficiency belt.

Abstract: Described herein are embodiments of a pressure hose having an improved reinforcement layer. In some embodiments, the reinforcement layer of the pressure hose has a reinforcement volumetric ratio (RVR) of greater than or equal to 110%. The reinforcement layer can include a plurality of braided beams, with each beam comprising a plurality of ends. In some embodiments, the plurality of ends within a beam are arranged in a multi-layer orientation. In some embodiments, the number of ends and the end orientation within each beam is identical amongst all beams in the reinforcement layer. The shape, size, and arrangement of the ends within a beam can all be adjusted to increase the surface area to volume ratio and, correspondingly, the RVR of the reinforcement layer.

Abstract: A short channel trench MOSFET which has a lower peak concentration of dopants and a substantially uniform concentration of dopants compared to a conventional short channel device.

Abstract: The active area of a current sense die is surrounded by a transition region which extends to the terminating periphery of the die. Spaced parallel MOSgated trenches extend through and define an active area. The trench positions in the transition region are eliminated or are deactivated, as by shorting to the MOSFET source of the trench, or by removing the source regions in areas of the transition region. By inactivating MOSgate action in the transition region surrounding the source, the device is made less sensitive to current ratio variation due to varying manufacturing tolerances. The gate to source capacitance is increased by surrounding the active area with an enlarged P+ field region which is at least five times the area of the active region, thereby to make the device less sensitive to ESD failure.

Abstract: A trench power semiconductor device including a recessed termination structure.

Abstract: One or more enhancement mode GaN devices has a stress-reduced gate region which interrupts the normally conductive 2Deg layer. A piezoelectric film is disposed over the stress-reduced gate region and can be excited to deflect and apply a stress to the stress reduced gate region to reintroduce the conductive 2Deg layer in that region and to turn on the device. A depletion mode segment may also be provided.

Abstract: A trench type power semiconductor device includes proud gate electrodes that extend out of the trenches and above the surface of the semiconductor body. These proud gate electrodes allow for making ultra-shallow source regions within the semiconductor body using, for example, a low temperature source drive. In addition, a method for manufacturing the trench type power semiconductor device includes a low temperature process flow once the gate electrodes are formed.

Abstract: A trench type top drain MOSgated device has a drain electrode on the die top and a source electrode on the die bottom surface. The device is turned on by a control voltage connected between a drain and a gate region. The device cell has a body short trench and a gate trench. Gate poly is disposed in the bottom of the gate trench and is disposed adjacent a thin gate oxide lining a channel region with minimum overlap of the drain drift region. The bottom of the body short trench contains a contact which shorts the body region to the channel region. The body short, top drain region and gate polysilicon are simultaneously silicided. The gate trench is widened at its top to improve Qgd characteristics. Both the body short trench and gate trench are simultaneously filled with gap fill material.

Abstract: A fabrication process for a trench type power semiconductor device includes forming inside spacers over a semiconductor surface. Using the spacers as masks, trenches with gates are formed in the semiconductor body. After removing the spacers, source implants are formed in the semiconductor body along the trench edges and are then driven. Insulation caps are then formed over the trenches. Outside spacers are next formed along the sides of the caps. Using these spacers as masks, the semiconductor surface is etched and high conductivity contact regions formed. The outside spacers are then removed and source and drain contacts formed. Alternatively, the source implants are not driven. Rather, prior to outside spacer formation a second source implant is performed. The outside spacers are then formed, portions of the second source implant etched, any remaining source implant driven, and the contact regions formed. The gate electrodes are either recessed below or extend above the semiconductor surface.

Abstract: A method for manufacturing a trench type power semiconductor device which includes process steps for forming proud gate electrodes in order to decrease the resistivity thereof.