Abstract: Disclosed herein are methods, devices, and systems for provide a new two-factor or user authentication procedure. In a scenario in which a user is enrolled in the verification system, a method can include receiving, at a network-based server, a unique identifier associated with a user that desires to access a service from an application or a website, identifying a typing profile associated with the unique identifier and presenting a reference text on a user device of the user. The method can include receiving a typing pattern of the user and determining whether there is a match between the typing pattern and one or more previously recorded typing patterns for the user. When the determination indicates that the user is verified, the method includes presenting a one-time password on a display of the user device. The user enters the one-time password into an input field and validating, via the network-based server, the one-time password.

Abstract: Disclosed herein are methods, devices, and systems for provide a new two-factor or user authentication procedure. In a scenario in which a user is enrolled in the verification system, a method can include receiving, at a network-based server, a unique identifier associated with a user that desires to access a service from an application or a website, identifying a typing profile associated with the unique identifier and presenting a reference text on a user device of the user. The method can include receiving a typing pattern of the user and determining whether there is a match between the typing pattern and one or more previously recorded typing patterns for the user. When the determination indicates that the user is verified, the method includes presenting a one-time password on a display of the user device. The user enters the one-time password into an input field and validating, via the network-based server, the one-time password.

Abstract: The disclosure provides a method for manufacturing a semiconductor device. The method, in one embodiment, includes forming semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445) over a substrate (310), and then forming a layer of material (510) over the semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445). This method further includes selectively etching portions of the layer of material (510) based upon a density or size of the semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445) located thereunder, and then polishing remaining portions of the layer of material (510).

Abstract: The disclosure provides a method for manufacturing a semiconductor device. The method, in one embodiment, includes forming semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445) over a substrate (310), and then forming a layer of material (510) over the semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445). This method further includes selectively etching portions of the layer of material (510) based upon a density or size of the semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445) located thereunder, and then polishing remaining portions of the layer of material (510).

Abstract: The present invention provides a method for planarizing/polishing a surface, a method for manufacturing an integrated circuit and a chemical mechanical polishing apparatus. The method for planarizing/polishing a surface, among other elements, includes providing a chemical mechanical polishing apparatus (200, 300, 400) having a polishing platen (210, 310, 410), a carrier head (220, 320, 420) positioned over the polishing platen (210, 310, 410), and a slurry delivery source (230, 330, 430) positioned over and off center the polishing platen (210, 310, 410), and rotating the polishing platen (210, 310, 410) in a direction (Rp2, Rp3, Rp4) such that slurry exiting the slurry delivery source (230, 330, 430) and contacting the polishing platen (210, 310, 410) must rotate an angle (?2, ?3, ?4) less than about 220 degrees before contacting a polishable surface maintained by the carrier head (220, 320, 420).