Abstract: Embodiments of the present disclosure generally provide apparatus and method for cooling a substrate support in a uniform manner. One embodiment of the present disclosure provides a cooling assembly for a substrate support. The cooling assembly includes a cooling base having a first side for contacting the substrate support and providing cooling to the substrate support, a diffuser disposed on a second side of the cooling base, wherein the diffuser defines a plurality of cooling paths for delivering a cooling fluid towards the cooling base in a parallel manner, and an inlet/outlet plate disposed under the diffuser, wherein the inlet/outlet plate is provides an interface between the diffuser and an inlet and outlet of a cooling fluid.

Abstract: An apparatus for providing processing gases to a process chamber with improved uniformity is disclosed. One embodiment provides a gas delivery assembly. The gas delivery assembly includes a hub, a nozzle, and one or more gas diffusers disposed in the nozzle. The nozzle has a cylindrical body with a side wall and a top surface. A plurality of injection passages are formed inside the nozzle to deliver processing gases into the process chamber via a plurality of outlets disposed in the side wall. The injection passages are configured to direct process gases out of each outlet disposed in the side wall in a direction which is not radially aligned with a centerline of the hub.

Abstract: An apparatus for providing processing gases to a process chamber with improved uniformity is disclosed. One embodiment provides a gas delivery assembly. The gas delivery assembly includes a hub, a nozzle, and one or more gas diffusers disposed in the nozzle. The nozzle has a cylindrical body with a side wall and a top surface. A plurality of injection passages are formed inside the nozzle to deliver processing gases into the process chamber via a plurality of outlets disposed in the side wall. The injection passages are configured to direct process gases out of each outlet disposed in the side wall in a direction which is not radially aligned with a centerline of the hub.

Abstract: Embodiments of the present invention generally provide an apparatus with a recess and a cavity formed therein for future hardware retrofit and uniformity enhancement and methods for controlling the same. In one embodiment, a substrate support includes a supporting body having an outer wall, a ground path disposed against and bounding the outer wall of the supporting body, a mounting plate coupled to a lower surface of the supporting body, wherein the mounting plate includes a lip extending outward from the mounting plate defining an upper surface; and a recess formed at a perimeter of the supporting body above the upper surface of the lip of the mounting plate, the recess lining on the ground path extending at least partially to the mounting plate.

Abstract: An annular lid plate of a plasma reactor has upper and lower layers of gas distribution channels distributing gas along equal length paths from gas supply lines to respective gas distribution passages of a ceiling gas nozzle.

Abstract: A gas injection system includes (a) a side gas plenum, (b) a plurality of N gas inlets coupled to said side gas plenum, (c) plural side gas outlets extending radially inwardly from said plenum, (d) an N-way gas flow ratio controller having N outputs coupled to said N gas inlets respectively, and (e) an M-way gas flow ratio controller having M outputs, respective ones of said M outputs coupled to said tunable gas nozzle and a gas input of said N-way gas flow ratio controller.

Abstract: An electrostatic chuck (ESC) with a cooling base for plasma processing chambers, such as a plasma etch chamber. In embodiments, a plasma processing chuck includes a plurality of independent edge zones. In embodiments, the edge zones are segments spanning different azimuth angles of the chuck to permit independent edge temperature tuning, which may be used to compensate for other chamber related non-uniformities or incoming wafer non-uniformities. In embodiments, the chuck includes a center zone having a first heat transfer fluid supply and control loop, and a plurality of edge zones, together covering the remainder of the chuck area, and each having separate heat transfer fluid supply and control loops. In embodiments, the base includes a diffuser, which may have hundreds of small holes over the chuck area to provide a uniform distribution of heat transfer fluid.

Abstract: Embodiments of the present disclosure provide apparatus and methods for improving plasma uniformity around edge regions and/or reducing non-symmetry in a plasma processing chamber. One embodiment of the present disclosure provides a plasma tuning assembly having one or more conductive bodies disposed around an edge region of a substrate support in a plasma processing chamber. The one or more conductive bodies are isolated from other chamber components and electrically floating in the processing chamber near the edge region without connecting to active electrical potentials. During operation, when a plasma is maintained in the plasma processing chamber, the presence of the one or more conductive bodies affects the plasma distribution near the one or more conductive bodies.

Abstract: Embodiments of inductively coupled plasma (ICP) reactors are provided herein. In some embodiments, a dielectric window for an inductively coupled plasma reactor includes: a body including a first side, a second side opposite the first side, an edge, and a center, wherein the dielectric window has a dielectric coefficient that varies spatially. In some embodiments, an apparatus for processing a substrate includes: a process chamber having a processing volume disposed beneath a lid of the process chamber; and one or more inductive coils disposed above the lid to inductively couple RF energy into and to form a plasma in the processing volume above a substrate support disposed within the processing volume; wherein the lid is a dielectric window comprising a first side and an opposing second side that faces the processing volume, and wherein the lid has a dielectric coefficient that spatially varies to provide a varied power coupling of RF energy from the one or more inductive coils to the processing volume.

Abstract: Embodiments of the present invention generally provide an apparatus with a recess and a cavity formed therein for future hardware retrofit and uniformity enhancement and methods for controlling the same. In one embodiment, a substrate support includes a supporting body having an outer wall, a ground path disposed against and bounding the outer wall of the supporting body, a mounting plate coupled to a lower surface of the supporting body, wherein the mounting plate includes a lip extending outward from the mounting plate defining an upper surface; and a recess formed at a perimeter of the supporting body above the upper surface of the lip of the mounting plate, the recess lining on the ground path extending at least partially to the mounting plate.

Abstract: Embodiments of the present invention relate to an apparatus for providing processing gases to a process chamber with improved uniformity. One embodiment of the present invention provides a gas delivery assembly. The gas delivery assembly includes a hub, a nozzle, and one or more gas diffusers disposed in the nozzle. The nozzle has a cylindrical body with a side wall and a top surface. A plurality of injection passages are formed inside the nozzle to deliver processing gases into the process chamber via a plurality of outlets disposed in the side wall. The injection passages are configured to direct process gases out of each outlet disposed in the side wall in a direction which is not radially aligned with a centerline of the hub.

Abstract: Embodiments of the present disclosure generally provide apparatus and method for cooling a substrate support in a uniform manner. One embodiment of the present disclosure provides a cooling assembly for a substrate support. The cooling assembly includes a cooling base having a first side for contacting the substrate support and providing cooling to the substrate support, a diffuser disposed on a second side of the cooling base, wherein the diffuser defines a plurality of cooling paths for delivering a cooling fluid towards the cooling base in a parallel manner, and an inlet/outlet plate disposed under the diffuser, wherein the inlet/outlet plate is provides an interface between the diffuser and an inlet and outlet of a cooling fluid.

Abstract: An electrostatic chuck (ESC) with a cooling base for plasma processing chambers, such as a plasma etch chamber. An ESC assembly includes a 2-stage design where a heat transfer fluid inlet (supply) and heat transfer fluid outlet (return) is in a same physical plane. The 2-stage design includes an assembly of a base upon which a ceramic (e.g., AlN) is disposed. The base is disposed over a diffuser which may have hundreds of small holes over the chuck area to provide a uniform distribution of heat transfer fluid. Affixed to the diffuser is a reservoir plate which is to provide a reservoir between the diffuser and the reservoir plate that supplies fluid to the diffuser. Heat transfer fluid returned through the diffuser is passed through the reservoir plate.