Abstract: An electrolytic plating composition for superfilling submicron features in a semiconductor integrated circuit device and a method of using the same. The composition comprises (a) a source of copper ions to electrolytically deposit copper onto the substrate and into the electrical interconnect features, and (b) a suppressor comprising at least three amine sites, said polyether comprising a block copolymer substituent comprising propylene oxide (PO) repeat units and ethylene oxide (EO) repeat units, wherein the number average molecular weight of the suppressor compound is between about 1,000 and about 20,000.

Abstract: An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor, and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.

Abstract: A composition for electrolytic plating in microelectronics which contains a leveler that comprises the reaction product of an aliphatic di(t-amine) with an alkylating agent. Electrolytic plating methods employing the leveler, a method for making the leveler, and the leveler compound.

Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.

Abstract: An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate.

Abstract: In electrolytic copper plating, an aqueous composition comprising a source of copper ions and at least one alkylene or polyalkylene glycol monoether which is soluble in the aqueous phase and has molecular weight not greater than about 500 for improving the efficacy of other additives such as, for example, levelers and suppressors; and a related plating method.

Abstract: A composition for electrolytic plating in microelectronics which contains a leveler that comprises the reaction product of an aliphatic di(t-amine) with an alkylating agent. Electrolytic plating methods employing the leveler, a method for making the leveler, and the leveler compound.