Abstract: A method includes depositing a layer of alumina over a silicon substrate, providing a patterned photoresist over the layer of alumina, providing an iron catalyst layer over the patterned photoresist, providing the iron catalyst layer over an exposed portion of the alumina, providing a first iron catalyst site over a first portion of the alumina, providing a second iron catalyst site over a second portion of the alumina, growing a first carbon nanotube on the first iron catalyst site, growing a second carbon nanotube on the second iron catalyst site, infiltrating the first carbon nanotube and the second carbon nanotube with carbon, and cooling both the first carbon nanotube and the second carbon nanotube. The infiltrating strengthens the first carbon nanotube and the second carbon nanotube to not delaminate from the substrate when the first carbon nanotube and the second carbon nanotube are cooled.

Abstract: Described herein are examples of systems, methods, apparatuses, and devices which include a carbon nanotube structure. The carbon nanotube structure may include a first carbon nanotube with a first top surface and a first bottom surface. The carbon nanotube structure may include a second carbon nanotube vertically aligned with the first carbon nanotube. The second carbon nanotube may include a second top surface and a second bottom surface. The first carbon nanotube and the second carbon nanotube may be infiltrated with carbon by a mixture that is flowing. The mixture may include a first amount of ethylene and a second amount of hydrogen. The carbon nanotube structure may include a thin film extending along the first bottom surface and the second bottom surface.

Abstract: A method includes depositing a layer of alumina over a silicon substrate, providing a patterned photoresist over the layer of alumina, providing an iron catalyst layer over the patterned photoresist, providing the iron catalyst layer over an exposed portion of the alumina, providing a first iron catalyst site over a first portion of the alumina, providing a second iron catalyst site over a second portion of the alumina, growing a first carbon nanotube on the first iron catalyst site, growing a second carbon nanotube on the second iron catalyst site, infiltrating the first carbon nanotube and the second carbon nanotube with carbon, and cooling both the first carbon nanotube and the second carbon nanotube. The infiltrating strengthens the first carbon nanotube and the second carbon nanotube to not delaminate from the substrate when the first carbon nanotube and the second carbon nanotube are cooled.

Abstract: By flowing an amount of hydrogen gas (25-75% of total flow), the stress of thin carbon films (100 nm-10 ?m) can be reduced. The films are deposited by chemical vapor deposition (800° C.-1100° C.) using an ethylene source gas (remainder of total flow). Carbon nanotube structures infiltrated with carbon by this method will not delaminate from the growth substrate, allowing for a range of post-processing methods. One process that can be performed is to etch the carbon “floor layer”, coat the structures in a Formvar film, and then release the structures using a chemical etch. Thin films (5-100 nm) can then be deposited on the substrate-defined Formvar surface. The Formvar can be removed by a thermal annealing step (400-600° C.), or a chemical etch step, either of which will leave suspended thin films over the open portions of the structures.