Abstract: The present invention is directed to a substrate dryer, a substrate treating apparatus including the substrate dryer, and a substrate treating method. The substrate dryer includes a chamber, a process chamber constituting one part of the chamber and provided for supplying supercritical fluid to a substrate to dry the substrate, and a high-pressure chamber constituting the other part of the chamber and provided for boosting the process chamber above a critical pressure. According to the present invention, the substrate drying chamber is boosted fast by the high-pressure chamber to change to a supercritical state and thus a substrate dry treatment is performed using supercritical fluid.

Abstract: Provided is a substrate processing apparatus for loading substrates such as solar cell substrates on a tray in substrate processing equipment for processing a large number of substrates. The substrate processing apparatus includes: a tray carrying unit configured to receive and carry a tray; a substrate loading conveyor unit on which substrates to be loaded on a tray are arranged in a line; a substrate unloading conveyor unit on which substrates unloaded from a tray are arranged in a line; a first substrate carrying robot configured to pick up substrates from the substrate loading conveyor unit and carry the substrates to a tray placed on the tray carrying unit; and a second substrate carrying robot configured to pick up substrates from a tray placed on the tray carrying unit and carry the substrates to the substrate unloading conveyor unit.

Abstract: There is provided an apparatus for treating a substrate using a plurality of treatment solutions in sequence. The apparatus includes treatment liquid collecting vessels for separately collecting used treatment solutions, and an exhaust member for separately discharging pollutant gases generated during a process.

Abstract: Provided are an apparatus and method for treating a substrate through a supercritical process. The apparatus includes a housing providing a space for performing a process, and a plurality of support members vertically arranged in the housing at predetermined intervals to support edges of substrates, respectively.

Abstract: Provided is an apparatus for cleaning and drying a substrate by applying a plurality of chemicals and gases to the substrate. The apparatus may include: a substrate support member including a chuck receiving a substrate; a first nozzle member injecting a drying fluid onto a top surface of the substrate for drying the substrate; a low cover including an opened top and enclosing the chuck; and an upper cover selectively closing the opened top of the low cover so as to dry the substrate in a closed space. Therefore, the apparatus dries a substrate more efficiently and protects the substrate from being contaminated by foreign pollutants. Furthermore, generation of an undesired oxidation layer on the substrate can be prevented.

Abstract: A chucking member configured to chuck the edge of a substrate includes a chucking pin which is eccentric from the rotation center. The chucking pin has a streamline shape and includes a first front-end portion disposed at the front end relative to the flow of an air current generated by the rotation of the substrate and a first back-end portion disposed at the back end relative to the flow of the air current. The first front-end portion includes a first tip, and the first front-end portion has a round shape.

Abstract: An apparatus is provided for supplying a plurality of chemicals or gases to the surface of a substrate to clean and dry the substrate. The apparatus includes a substrate support unit with a chuck on which a substrate is loaded, a bottom chamber having an open top and configured to surround the circumference of the chuck, a top chamber configured to open or close the top of the bottom chamber such that a drying treatment for the substrate is performed while the substrate is isolated from the outside, and an indirect injection nozzle installed at the edge of the top chamber and configured to inject drying fluid toward the center of the top chamber such that the drying fluid is indirectly injected to the substrate. According to the apparatus, it is possible to enhance a substrate drying efficiency, suppress external contamination, and prevent the formation of an oxide layer.

Abstract: Provided is a substrate processing apparatus for loading substrates such as solar cell substrates on a tray in substrate processing equipment for processing a large number of substrates. The substrate processing apparatus includes: a tray carrying unit configured to receive and carry a tray; a substrate loading conveyor unit on which substrates to be loaded on a tray are arranged in a line; a substrate unloading conveyor unit on which substrates unloaded from a tray are arranged in a line; a first substrate carrying robot configured to pick up substrates from the substrate loading conveyor unit and carry the substrates to a tray placed on the tray carrying unit; and a second substrate carrying robot configured to pick up substrates from a tray placed on the tray carrying unit and carry the substrates to the substrate unloading conveyor unit.

Abstract: Provided is a thin film deposition apparatus. The thin film deposition apparatus includes a substrate support unit configured to support a substrate; and a shower head disposed above the substrate support unit to supply a process gas to the substrate. The shower head includes: an upper plate including a plurality of gas channels forming process gas flow paths and gas injection holes formed in the gas channels, high-frequency power being applied to the upper plate to excite the process gas into plasma; a baffle plate disposed under the upper plate and including a plurality of holes to uniformly distribute the process gas; and an injection plate disposed under the baffle plate to inject the process gas supplied through the baffle plate to a substrate.

Abstract: A spin head includes chucking pins configures to chuck and unchuck a substrate. Contact portions of the chucking pins and the substrate are varied during a process to prevent a treating solution from remaining at the contact portions.

Abstract: A facility for cleaning substrates such as semiconductor wafers includes a loading/unloading part, an aligning part where wafers are repositioned from a horizontal state to a vertical state, a cleaning part performing etchant-treating, rinsing, and drying processes for wafers and having a plurality of process chamber stacked, and an interface part where a transfer bath is disposed to transfer wafers between the process chambers. When the wafers are transferred between the process chamber, the transfer bath is filled with deionized water (DI water) to prevent their exposure to the air. Wafers drawn out of the loading/unlading part are repositioned from a horizontal state to a vertical state and are transferred to a first process chamber being one of the process chambers to be subjected to a part of processes.

Abstract: In an apparatus for transferring a substrate, a partition wall is disposed in a vertical direction in a housing to divide an interior space of the housing into a first space and a second space. A pressure generating member divides the first space into an upper space and a lower space and moves in a vertical direction in the first space such that a positive pressure and a negative pressure are alternately generated in the upper space and the lower space. A substrate supporting member is movably disposed in the second space to support and to transfer the substrate. A plurality of gates is disposed on a side wall of the housing and the partition wall, and is opened and closed by the positive pressure and the negative pressure such that the particles are eliminated from the second space to an exterior space via the first space.

Abstract: Provided is an apparatus for supplying chemical liquid. The apparatus includes: a plurality of nozzles, each of which can be moved forward or backward and supplies chemical liquid; a nozzle cover which accommodates the nozzles therein and has an open end to allow each of the nozzles to move into or out of the nozzle cover; and a nozzle driver which moves each of the nozzles forward or backward.

Abstract: A substrate treating apparatus includes a substrate support unit with a chuck on which a substrate is loaded; a bottom chamber having an open top and configured to surround the circumference of the chuck; a top chamber configured to open or close the top of the bottom chamber such that the substrate is dried while the top chamber is sealed from the outside; and a direct injection nozzle member installed at the top chamber to inject fluid directly to the substrate while the top of the bottom chamber is closed. According to the substrate treating apparatus, drying efficiency of an entire substrate is enhanced, external contaminants are blocked, and generation of an oxide layer is suppressed.

Abstract: The present invention provides an apparatus and method for cleaning substrates such as semiconductor wafers by sinking the substrates into cleaning fluids such as cleaning chemicals or rinsing liquids and then drying the substrates. The substrate clean and dry apparatus of present invention includes a process chamber comprising a cleaning chamber that carries the cleaning fluid and discharges at bottom the cleaning fluid; and a drying chamber above the cleaning chamber. The process chamber further includes a discharge device for evacuating the gas from the drying chamber, the gas supplied into the drying chamber. The discharge device is located between the cleaning chamber and the drying chamber, and evacuates the gas by force such that the gas is driven down vertically in the drying chamber.

Abstract: Provided is an apparatus for supplying chemical liquid. The apparatus includes: a plurality of nozzles, each of which can be moved forward or backward and supplies chemical liquid; a nozzle cover which accommodates the nozzles therein and has an open end to allow each of the nozzles to move into or out of the nozzle cover; and a nozzle driver which moves each of the nozzles forward or backward.

Abstract: In an apparatus for transferring a substrate, a partition wall is disposed in a vertical direction in a housing to divide an interior space of the housing into a first space and a second space. A pressure generating member divides the first space into an upper space and a lower space and moves in a vertical direction in the first space such that a positive pressure and a negative pressure are alternately generated in the upper space and the lower space. A substrate supporting member is movably disposed in the second space to support and to transfer the substrate. A plurality of gates is disposed on a side wall of the housing and the partition wall, and is opened and closed by the positive pressure and the negative pressure such that the particles are eliminated from the second space to an exterior space via the first space.

Abstract: A spin head includes chucking pins configures to chuck and unchuck a substrate. Contact portions of the chucking pins and the substrate are varied during a process to prevent a treating solution from remaining at the contact portions.

Abstract: A chucking member configured to chuck the edge of a substrate includes a chucking pin which is eccentric from the rotation center. The chucking pin has a streamline shape and includes a first front-end portion disposed at the front end relative to the flow of an air current generated by the rotation of the substrate and a first back-end portion disposed at the back end relative to the flow of the air current. The first front-end portion includes a first tip, and the first front-end portion has a round shape.

Abstract: The present invention is directed to a substrate dryer, a substrate treating apparatus including the substrate dryer, and a substrate treating method. The substrate dryer includes a chamber, a process chamber constituting one part of the chamber and provided for supplying supercritical fluid to a substrate to dry the substrate, and a high-pressure chamber constituting the other part of the chamber and provided for boosting the process chamber above a critical pressure. According to the present invention, the substrate drying chamber is boosted fast by the high-pressure chamber to change to a supercritical state and thus a substrate dry treatment is performed using supercritical fluid.