Abstract: There are provided an optical system having high resolution and high optical performance and reduced in size, an optical apparatus including the optical system, an imaging apparatus, and a method for manufacturing the optical system and imaging apparatus. An optical system UL of a camera module 10, which is incorporated in an optical apparatus, such as a camera 60, is an optical system that forms an image of an object, includes a correction member having a correction surface 11a, a first reflection surface 12a, which reflects light having passed through the correction surface 11a, and a second reflection surface 13a, which reflects the light reflected off the first reflection surface 12a, and satisfies predetermined conditions.

Abstract: An exposure method includes an exposure step and a measurement step. The exposure step transfers a circuit pattern of a mask onto a photosensitive substrate via an optical system. The mask includes a circuit pattern and an inspection pattern to be used for a measurement of a line width of the pattern transferred to the substrate. The measurement step measures, prior to the exposure step, using the inspection pattern which is formed on the mask to be used in the exposure step, a line width of the pattern to be transferred to the substrate.

Abstract: A mask of the present invention has a circuit pattern to be transferred to a substrate via an optical system, and an inspection pattern to be used for a measurement of a line width of the pattern transferred to the substrate. By using such a mask, the time for proceeding from inspection to actual device exposure can be shortened.

Abstract: An exposure apparatus with optimum illumination conditions without dependence on the directionality of the fine pattern on a reticle comprises an illumination optical system for illuminating a reticle having a pattern to be transferred and a projection optical system for projecting and transforming the reticle pattern on a substrate. The illumination optical system has pupil shape forming unit for forming four substantially planar light sources on the plane in the vicinity of its pupil. These four substantially planar light sources are arranged at each substantial vertices of a narrow rectangle whose barycenter is located on the illumination optical axis.

Abstract: Apparatus for performing measurement of a dimension of a test marked formed by overlapping feature imaged onto a an image forming layer of a semiconductor wafer and the calculation of the critical dimensions of the features from test mark. This is used in semiconductor processing. Also included is software configured to program a measurement device to perform the measurement and calculation of the dimension of a test mark.

Abstract: An exposure method comprises the steps of: providing a resist-coated substrate; providing a first mask including first and second regions having respective patterns formed therein; conducting a first exposure process in which the patterns in the first and second regions of the first mask are projected onto the substrate so as to expose first and second regions of the substrate which correspond to the patterns, respectively; and conducting a second exposure process after completion of said first exposure process so as to make an additional exposure of the second region of the substrate. By virtue of the incorporation of the second exposure process so as to make an additional exposure of the second region of the substrate, the resist linewidth which would be otherwise produced in the second region of the substrate by the first exposure process can be compensated through the second exposure process.

Abstract: An exposure apparatus with optimum illumination conditions without dependence on the directionality of the fine pattern on a reticle comprises an illumination optical system for illuminating a reticle having a pattern to be transferred and a projection optical system for projecting and transforming the reticle pattern on a substrate. The illumination optical system has pupil shape forming unit for forming four substantially planar light sources on the plane in the vicinity of its pupil. These four substantially planar light sources are arranged at each substantial vertices of a narrow rectangle whose barycenter is located on the illumination optical axis.

Abstract: A method for forming a critical dimension test mark, and the use of the mark to characterize and monitor imaging performance is provided. Methods in accordance with the present invention encompass an exposure of an essentially standard critical dimension bar at each of two overlapping orientations that are rotated about an axis with respect to each other. The overlapped portion forming a critical dimension test mark that is useful for enabling low cost, rapid determination of sub-micron critical dimensions for characterizing exposure tool imaging performance and in-process performance monitoring using optical measurement systems.

Abstract: An exposure method comprises the steps of: providing a resist-coated substrate; providing a first mask including first and second regions having respective patterns formed therein; conducting a first exposure process in which the patterns in the first and second regions of the first mask are projected onto the substrate so as to expose first and second regions of the substrate which correspond to the patterns, respectively; and conducting a second exposure process after completion of said first exposure process so as to make an additional exposure of the second region of the substrate. By virtue of the incorporation of the second exposure process so as to make an additional exposure of the second region of the substrate, the resist linewidth which would be otherwise produced in the second region of the substrate by the first exposure process can be compensated through the second exposure process.

Abstract: A method for forming a critical dimension test mark, and the use of the mark to characterize and monitor imaging performance is provided. Methods in accordance with the present invention encompass an exposure of an essentially standard critical dimension bar at each of two overlapping orientations that are rotated about an axis with respect to each other. The overlapped portion forming a critical dimension test mark that is useful for enabling low cost, rapid determination of sub-micron critical dimensions for characterizing exposure tool imaging performance and in-process performance monitoring using optical measurement systems.

Abstract: A mask of the present invention has a circuit pattern to be transferred to a substrate via an optical system, and an inspection pattern to be used for a measurement of a line width of the pattern transferred to the substrate. By using such a mask, the time for proceeding from inspection to actual device exposure can be shortened.

Abstract: Improvements in a focusing apparatus having an objective optical system for optically manufacturing a workpiece, forming a desired pattern on a surface of a workpiece or inspecting a pattern on a workpiece and used to adjust the state of focusing between the surface of the workpiece and the objective optical system. The focusing apparatus has a first detection system having a detection area at a first position located outside the field of the objective optical system, a second detection system having a detection area at a second position located outside the field of the objective optical system and spaced apart from the first position, and a third detection system having a detection area at a third position located outside the field of the objective optical system and spaced apart from each of the first and second positions.

Abstract: A method for forming a critical dimension test mark, and the use of the mark to characterize and monitor imaging performance is provided. Methods in accordance with the present invention encompass an exposure of an essentially standard critical dimension bar at each of two overlapping orientations that are rotated about an axis with respect to each other. The overlapped portion forming a critical dimension test mark that is useful for enabling low cost, rapid determination of sub-micron critical dimensions for characterizing exposure tool imaging performance and in-process performance monitoring using optical measurement systems.

Abstract: A local air duct directs a temperature-controlled stream of air across two perpendicular sets of interferometer beams which are used to measure the two dimension (X-Y) position of a precision stage in e.g. an optical lithography stepper or step and scan system, or in any other precision coordinate measuring machine. By thereby providing an additional single air flow which is azimuthally directed across both the X and Y direction interferometer beams, the precision of the interferometric measurement is maximized. In addition, a second flow of air is directed downwards from the local air duct, thus providing sufficient air circulation onto the stage when the stage is directly beneath the local duct, even though in that location the stage is otherwise blocked from receiving the main air flow through the chamber.

Abstract: A mask alignment system for integrated circuit lithography achieves reticle to wafer referencing. A detection system located below the main projection lens detects the image of reticle alignment marks while also detecting wafer alignment marks. The reticle marks are imaged in light at the exposure wavelength. A first detection method images the fluorescence produced in the photoresist by the reticle mark images. A microscope located below the main projection lens produces the image and also images the wafer marks with broadband non-actinic illumination. The second method images the reticle marks in exposure light using a microscope which images and detects the exposure wavelength while maintaining the illumination and detection of the wafer marks. The third method collects directly both the exposure light and fluorescent light that is scattered and reflected from the wafer surface; the presence of wafer alignment marks changes this light collection.

Abstract: A method and apparatus for determining performance characteristics in lithographic tools includes projecting a predetermined image with a projection system having a known predetermined performance characteristic to obtain data indicative of the relationship between the size of the projected image and the predetermined performance characteristic. The same image is then projected in a system having an unknown value for the predetermined performance characteristic. The predetermined performance characteristic for the system under consideration is then determined based on the data obtained when the image was projected in the system having the known predetermined performance characteristic.

Abstract: Improvements in a focusing apparatus having an objective optical system for optically manufacturing a workpiece, forming a desired pattern on a surface of a workpiece or inspecting a pattern on a workpiece and used to adjust the state of focusing between the surface of the workpiece and the objective optical system. The focusing apparatus has a first detection system having a detection area at a first position located outside the field of the objective optical system, a second detection system having a detection area at a second position located outside the field of the objective optical system and spaced apart from the first position, and a third detection system having a detection area at a third position located outside the field of the objective optical system and spaced apart from each of the first and second positions.

Abstract: Defects in a processed or partly processed semiconductor wafer, or other similar three-dimensional periodic pattern formed on a substrate surface, are detected by light diffraction. Incident monochromatic light is provided from an elongated and extended source to illuminate the entire wafer surface. By use of automated image processing techniques, wafer macro inspection is thereby automated. The elongated and extended light source allows light at different angles to be incident upon each point of the wafer surface, thereby allowing defect detection for an entire wafer surface in a single field of view and reducing inspection time. The particular wavelength of the incident monochromatic light is predetermined to allow optimum detection of defects in the periodic pattern on the wafer, depending on the width and pitch of the features of the periodic pattern.

Abstract: Accurate measurement of the sidewalls of photoresist features formed on a semiconductor substrate is achieved by a double mask exposure process. This allows probing the sidewalls of closely spaced photoresist features with the probe tip of an atomic force microscope, in spite of the small (submicron) physical dimensions involved. First a conventional line/space pattern is exposed onto the photoresist using the desired mask. Then a second exposure is made using a second mask which has a special space pattern to effectively remove the already exposed photoresist features along at least one side of one of the previously exposed features. Hence, at least that one side of that one feature is clear of any adjoining photoresist features when the photoresist is then developed after the two exposures. This allows easy access to the sidewall of that one photoresist feature by tilting the probe tip of the atomic force microscope.

Abstract: A method of detecting particles on a wafer support surface comprising positioning a wafer in a first position on the surface with the wafer in the first position, generating a first pattern on the wafer, and moving the wafer. Then, after moving the wafer, generating a second pattern on the wafer to generate a moire pattern by the interaction of the second pattern with the first pattern. The moire pattern is inspected to identify any visual distortion in the moire pattern due to physical distortion of the wafer caused by a particle on the support surface during the generation of the first pattern. The patterns may be ruled parallel lines, and the second pattern may be moved during inspection to shift the moire pattern to reveal distortions over a wide area.